FDMS8888 ® NNNN N-Channel PowerTrench MOSFET 30 V, 21 A, 9.5 m: Features General Description Max rDS(on) = 9.5 m: at VGS = 10 V, ID = 13.5 A The FDMS8888 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. Max rDS(on) = 14.5 m: at VGS = 4.5 V, ID = 10.9 A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design Applications RoHS Compliant Synchronous Buck for Notebook Vcore and Server Notebook Battery Pack Load Switch Bottom Top S D D D S S Pin 1 D 5 4 G G D 6 3 S D 7 2 S D 8 1 S D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C Units V ±20 V 21 51 (Note 1a) -Pulsed EAS Ratings 30 13.5 A 80 Single Pulse Avalanche Energy Power Dissipation (Note 3) PD TC = 25 °C Power Dissipation TA = 25 °C TJ, TSTG Operating and Storage Junction Temperature Range 54 42 (Note 1a) 2.5 -55 to +150 mJ W °C Thermal Characteristics RTJC Thermal Resistance, Junction to Case RTJA Thermal Resistance, Junction to Ambient 3.3 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking 8888 Device FDMS8888 ©2011 Fairchild Semiconductor Corporation FDMS8888 Rev.C Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com ® FDMS8888 N-Channel PowerTrench MOSFET July 2011 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 PA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 2.5 V 30 V 19 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.2 1.9 -7 mV/°C VGS = 10 V, ID = 13.5 A 8 9.5 VGS = 4.5 V, ID = 10.9 A 11 14.5 VGS = 10 V, ID = 13.5 A, TJ = 125 °C 12 14.5 VDD = 10 V, ID = 13.5 A 78 m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 1195 1585 234 315 pF pF 161 245 pF 0.9 2.5 : Switching Characteristics td(on) Turn-On Delay Time tr Rise Time VDD = 15 V, ID = 13.5 A, VGS = 10 V, RGEN = 6 : td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0 V to 10 V VGS = 0 V to 5 V Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 15 V, ID = 13.5 A 9 18 ns 6 12 ns 23 27 ns 4 10 ns 23 33 nC 13 18 nC 3.5 nC 5.1 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.1 A (Note 2) 0.74 1.2 V VGS = 0 V, IS = 13.5 A (Note 2) 0.84 1.2 V 20 32 ns 8 16 nC IF = 13.5 A, di/dt = 100 A/Ps NOTES: 1. RTJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the user's board design. a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%. 3. Starting TJ = 25 °C, L = 0.3 mH, IAS = 19 A, VDD = 27 V, VGS = 10 V. ©2011 Fairchild Semiconductor Corporation FDMS8888 Rev.C 2 www.fairchildsemi.com ® FDMS8888 N-Channel PowerTrench MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 4.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 80 ID, DRAIN CURRENT (A) PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX VGS = 10 V 60 VGS = 6 V VGS = 3.5 V VGS = 4.5 V 40 20 VGS = 3 V 0 0.0 0.5 1.0 1.5 2.0 2.5 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 3.5 VGS = 3 V 3.0 2.5 VGS = 3.5 V 2.0 1.0 VGS = 10 V 0.5 3.0 0 20 40 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics 80 40 ID = 13.5 A VGS = 10 V rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (m:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 60 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 30 ID = 13.5 A 20 TJ = 150 oC 10 TJ = 25 oC 0 100 125 150 2 TJ, JUNCTION TEMPERATURE (oC) 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) 80 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) VGS = 6 V VGS = 4.5 V 1.5 60 VDS = 5 V 40 TJ = 25 oC TJ = 150 oC 20 TJ = -55 oC 0 0 1 2 3 4 VGS = 0 V 10 1 TJ = 25 oC TJ = 175 oC 0.1 TJ = -55 oC 0.01 1E-3 0.0 5 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2011 Fairchild Semiconductor Corporation FDMS8888 Rev.C 3 1.2 www.fairchildsemi.com ® FDMS8888 N-Channel PowerTrench MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2000 Ciss ID = 13.5 A 8 1000 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 15 V 6 VDD = 10 V VDD = 20 V 4 Coss f = 1 MHz VGS = 0 V 2 Crss 100 0.1 0 0 5 10 15 20 25 1 Figure 7. Gate Charge Characteristics 60 10 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 30 Figure 8. Capacitance vs Drain to Source Voltage 20 TJ = 100 oC TJ = 25 oC TJ = 125 oC 50 VGS = 10 V 40 30 VGS = 4.5 V 20 Limited by Package 10 o RTJC = 3.3 C/W 1 0.01 0.1 1 10 0 25 100 50 tAV, TIME IN AVALANCHE (ms) 150 P(PK), PEAK TRANSIENT POWER (W) 500 10 1 ms 10 ms THIS AREA IS LIMITED BY rDS(on) 100 ms 1s SINGLE PULSE TJ = MAX RATED 10 s RTJA = 125 oC/W DC o TA = 25 C 0.01 0.01 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 100 us 0.1 100 o 100 1 75 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 0.1 1 10 100 VGS = 10 V SINGLE PULSE RTJA = 125 oC/W 10 TA = 25 oC 1 0.2 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMS8888 Rev.C 2 10 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com ® FDMS8888 N-Channel PowerTrench MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZTJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA SINGLE PULSE 0.01 o RTJA = 125 C/W 0.003 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMS8888 Rev.C 5 www.fairchildsemi.com ® FDMS8888 N-Channel PowerTrench MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted ® FDMS8888 N-Channel PowerTrench MOSFET Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMS8888 Rev.C 6 www.fairchildsemi.com tm tm ® FDMS8888 N-Channel PowerTrench MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I55 ©2011 Fairchild Semiconductor Corporation FDMS8888 Rev.C 7 www.fairchildsemi.com