ANALOGPOWER AM4929P

AM4929P
Analog Power
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
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PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
52 @ VGS = -4.5V
-20
89 @ VGS = -2.5V
124 @ Vgs = -1.8V
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOIC-8 saves board space
Fast switching speed
High performance trench technology
ID (A)
-4.9
-4.0
-3.6
1
8
2
7
3
6
4
5
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum Units
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±12
o
T A=25 C
a
Continuous Drain Current
o
-5.2
ID
T A=70 C
b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
IDM
±50
IS
-2.1
o
Power Dissipation
T A=25 C
a
o
Maximum Junction-to-Case
a
Maximum Junction-to-Ambient
W
1.3
o
C
T J, T stg -55 to 150
THERMAL RESISTANCE RATINGS
Parameter
a
A
2.1
PD
T A=70 C
Operating Junction and Storage Temperature Range
A
-4.1
t <= 5 sec
t <= 5 sec
Symbol
Maximum
RθJC
RθJA
40
60
Units
o
C/W
C/W
o
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM4929_E
AM4929P
Analog Power
o
SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
VGS(th)
IGSS
VDS = VGS, ID = -250 uA
Min
Limits
Unit
Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain CurrentA
ID(on)
Drain-Source On-ResistanceA
Forward TranconductanceA
Diode Forward Voltage
rDS(on)
gfs
VSD
-0.7
VDS = 0 V, VGS = ±12 V
±100
nA
VDS = -16 V, VGS = 0 V
-1
-5
uA
o
VDS = -16 V, VGS = 0 V, TJ = 55 C
VDS = -4.5 V, VGS = -10 V
VGS = -4.5 V, ID = -4.9 A
VGS = -2.5 V, ID = -4.0 A
VGS = -1.8 V, ID = -3.6 A
-20
A
52
89
124
VDS = -15 V, ID = -4.9 A
IS = 2.5 A, VGS = 0 V
mΩ
20
-0.6
S
V
b
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = -10 V, VGS = -4.5 V,
ID = -4.9 A
VDD = -10 V, RL = 6 Ω , ID = -1 A,
VGEN = -4.5 V
16.7
1.8
1.9
7
13
14
9
nC
nS
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
2
PRELIMINARY
Publication Order Number:
DS-AM4929_E
AM4929P
Analog Power
Typical Electrical Characteristics (P-Channel)
20
15
VGS = -4.5V
o
T A = -55 C
-2.5V
o
25 C
15
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
-3.0V
-2.0V
10
5
0
0
1
2
3
10
o
125 C
5
0
4
0.5
-V DS , DRAIN TO SOURCE VOLTAGE (V)
1
Figure 1. Output Characteristics
2
2.5
Figure 2. Transfer Characteristics
1.6
1500
CISS
1200
1.4
CAPACITANCE (pF)
R DS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.5
-V GS , GATE TO SOURCE VOLTAGE (V)
VGS = -2.5V
1.2
-4.5V
1
900
600
COSS
300
CRSS
0
0.8
0
0
5
10
-ID, DIRAIN CURRENT (A)
15
5
20
10
15
20
-V DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 4. Capacitance
Figure 3. On-Resistance vs. Drain Current
-10
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.6
Vgs Voltage ( V )
-8
-6
-4
-2
VGS = -4.5V
1.4
1.2
1
0.8
0.6
0
0
4
8
12
16
-50
20
-25
0
25
50
75
100
125
150
o
TJ, JUNCTION TEMPERATURE ( C)
Qg, Charge (nC)
Figure 5. Gate Charge
Figure 6. On-Resistance vs. Junction Temperature
3
PRELIMINARY
Publication Order Number:
DS-AM4929_E
AM4929P
Analog Power
Typical Electrical Characteristics (P-Channel)
R DS(ON), ON-RESISTANCE (OHM)
0.15
10
1
o
T A = 125 C
0.1
o
25 C
0.01
0.001
0.0001
0.12
0.09
0.06
0.03
0
0
0.2
0.4
0.6
0.8
1
1.2
1
2
-V SD, BODY DIODE FORWARD VOLTAGE (V)
3
4
5
-V GS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Source-Drain Diode Forward Voltage
Figure 8. On-Resistance with Gate to Source Voltage
50
P(pk), PEAK TRANSIENT POWER (W)
1.2
-V th, GATE-SOURCE THRESTHOLD
VOLTAGE (V)
-IS, REVERSE DRAIN CURRENT (A)
100
ID = -250µA
1
0.8
0.6
0.4
SINGLE PULSE
RqJA = 125oC/W
TA = 25oC
40
30
20
10
0
-50
-25
0
25
50
75
100
125
150
0.001
o
0.01
TA, AMBIENT TEMPERATURE ( C)
Figure 9. Vth Gate to Source Voltage Vs Temperature
0.1
1
t1, TIME (SEC)
10
100
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
D = 0.5
RqJ A(t) = r(t) + R qJ A
R qJ A = 125 癈/W
0.2
0.1
0.1
0.0
P (pk)
0.02
t1
t2
TJ - TA = P * R qJ A(t)
Duty C ycle , D = t1 / t2
0.01
0.01
S INGLE P ULS E
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIM E (s ec )
Figure 11. Transient Thermal Response Curve
4
PRELIMINARY
Publication Order Number:
DS-AM4929_E
AM4929P
Analog Power
Package Information
SO-8: 8LEAD
H x 45°
5
PRELIMINARY
Publication Order Number:
DS-AM4929_E