BCDSEMI MBR5H150

Preliminary Datasheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
General Description
Main Product Characteristics
High voltage schottky rectifier suited for switch
mode power supplies and other power converters.
This device is intended for use in medium voltage
operation, and particularly, in high frequency circuits
where low switching losses and low noise are
required.
The MBR5H150 is available in standard DO-27 and
DO-27(A) packages.
•
IF(AV)
5A
VRRM
150V
TJ
175°C
VF(max)
0.92V
Mechanical Characteristics
Features
•
•
•
•
•
MBR5H150
•
•
•
•
High Surge Capacity
Low Forward Voltage Drop
175°C Operating Junction Temperature
Guard-Ring for Stress Protection
Pb-Free and Halogen-Free Packages are
available
The Plastic Material Carries UL Recongnition
94V-0
Case: JEDEC DO-201AD Molded Plastic
Epoxy Meets UL 94 [email protected] 0.125 in
Weight (Approximately): 1.2 Grams
Finish: All External Surfaces Corrosion
Resistant and Terminal
Applications
•
•
•
Power Supply − Output Rectification
Power Management
Instrumentation
DO-27
DO-27(A)
Figure 1. Package Type of MBR5H150
Aug. 2009
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
1
Preliminary Datasheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR5H150
Pin Configuration
VP Pacakge
(DO-27)
VPA Package
(DO-27(A))
Figure 2. Pin Configuration of MBR5H150 (Top View)
Ordering Information
MBR5H150
-
Circuit Type
E1: Lead Free
G1: Green
Package
VP: DO-27
VPA: DO-27(A)
Part Number
Package
DO-27
DO-27(A)
Blank: Tube
TR: Ammo
Lead Free
Marking ID
Green
Lead Free
Green
Packing
Type
MBR5H150VP-E1
MBR5H150VP-G1
515VP
515VPG
Bulk
MBR5H150VPTR-E1
MBR5H150VPTR-G1
515VP
515VPG
Ammo
MBR5H150VPA-E1
MBR5H150VPA-G1
515VP
515VPG
Bulk
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Products with “G1” suffix are available in green packages.
Aug. 2009
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
2
Preliminary Datasheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR5H150
Absolute Maximum Ratings ( Per Diode Leg) (Note 1)
Parameter
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC = 150°C
Non repetitive Peak Surge Current
(Surge applied at rated load conditions half wave, single phase, 60Hz)
Operating Junction Temperature Range(Note 2)
VRRM
VRWM
VR
150
V
IF(AV)
5
A
IFSM
125
A
TJ
175
°C
Storage Temperature Range
TSTG
-55 to 175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10000
> 400
> 8000
V/µs
ESD Ratings: Machine Model = C
Human Body Model =3B
V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ <
1/θJA.
Recommended Operating Conditions
Parameter
Symbol
Condition
Value
θJC
Junction to Case
TBD
θJA
Junction to
Ambient
TBD
Maximum Thermal Resistance
Unit
°C/W
Electrical Characteristics
Parameter
Maximum Instantaneous Forward
Voltage Drop (Note 3)
Maximum Instantaneous Reverse
Current (Note 3)
Symbol
VF
IR
Conditions
IF=5A, TC=25°C
Rated
DC
TC=25°C
Voltage,
Rated
DC
TC=150°C
Voltage,
Value
Units
0.92
V
8.0
µA
50.0
mA
Note 3: Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%.
Aug. 2009
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
3
Preliminary Datasheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR5H150
Typical Performance Characteristics
IF,Instantaneous Forward Current(A)
100
10
1
0
25 C
0
125 C
0
150 C
0
175 C
0.1
0.01
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VF,Instantaneous Forward Voltage(V)
Figure 3. Typical Forward Characteristics
10000
IR,Reverse Current(µA)
1000
100
10
0
25 C
0
125 C
0
150 C
0
175 C
1
0.1
0.01
0.001
0
20
40
60
80
100
120
140
160
VR,Reverse Voltage(V)
Figure 4. Typical Reverse Characteristics
Aug. 2009
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
4
Preliminary Datasheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR5H150
Mechanical Dimensions
DO-27
Unit: mm(inch)
1.200(0.047)
1.300(0.051)
25.400(1.000) MIN
DIA.
8.500(0.375)
9.500(0.335)
5.000(0.197)
5.600(0.220)
DIA.
25.400(1.000) MIN
Aug. 2009
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
5
Preliminary Datasheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR5H150
Mechanical Dimensions (Continued)
DO-27(A)
8.500(0.375)
9.500(0.335)
Unit: mm(inch)
5.000(0.197)
5.600(0.220)
DIA.
15.100(0.594)
16.100(0.634)
1.800(0.074)
MIN.
3.500(0.138)
4.500(0.0.177)
19.500(0.768
20.500(0.807)
1.200(0.047)
1.300(0.051)
1.500(0.059)
MAX.
DIA.
Aug. 2009
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
6
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