NPN BU911 HIGH VOLTAGE POWER DARLINGTON The BU911 are high voltage, silicon NPN transistors in monolithic Darlington mounted in Jedec TO-220 plastic package. They are designed for applications such as electronic ignition, DC and AD motor controls, solenoid drivers, etc. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO VCES VEBO Collector-Emitter Voltage Collector-Emitter Voltage (VBE=0) Emitter-Base Voltage IC Collector Current IB PD TJ TStg Base Current Total Device Dissipation Junction Temperature Storage Temperature range IC ICM @ TC = 25° Value Unit 400 450 5 6 10 1 60 150 -65 to +150 V V V A A A Watts °C °C THERMAL CHARACTERISTICS Symbol RthJ-c Ratings Value Unit 70 K/W Thermal Resistance, Junction to case ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICEO ICES IEBO VCEO(sus) Ratings Test Condition(s) Collector Cutoff Current Collector Cutoff Current VCE=400 V, IB=0V VCE=450 V, VBE=0 VCE=450 V, VBE=0, TC=125°C VBE=5.0 V, IC=0 Emitter Cutoff Current Collector- Emitter sustaining IC=100 mA Voltage (1) COMSET SEMICONDUCTORS Min Typ Mx Unit - - 1 1 5 5 mA 400 - - V 1/2 mA mA NPN BU911 Symbol Ratings Test Condition(s) Min Typ Mx Unit VF Didode forward Voltage IF=4 A - - 2.5 VCE(SAT) Collector-Emitter saturation Voltage (1) IC=2.5 A, IB=50 mA - - 1.8 IC=4 A, IB=200 mA - - 1.8 VBE(SAT) Base-Emitter saturation Voltage (1) IC=2.5 A, IB=50 mA - - 2.2 IC=4 A, IB=200 mA - - 2.5 (1) Pulse conditions : tp < 300 µs, duty cycle =1.5% NPN BU911 MECHANICAL DATA CASE TO-220 DIMENSIONS mm A B C D E F G H L M N P R S T U Pin 1 : Pin 2 : Pin 3 : 9,86 15,73 13,37 6,67 4,44 4,21 2,99 17,21 1,29 3,6 1,36 0,46 2,1 5 2,52 0,79 inches 0,39 0,62 0,52 0,26 0,17 0,16 0,11 0,68 0,05 0,14 0,05 0,02 0,08 0,19 0,098 0,03 base Collector emitter Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 2/2 V V V