2N6253 - 2N6254 - 2N6371 HIGH POWER SILICON NPN TRANSISTORS The 2N6253, 2N6254, and 2N6371 are silicon NPN transistors intended for a wide variety of high-power applications. The construction of these devices renders them highly resistant to second breakdown over a wide range of operating conditions. These devices differ in maximum ratings for voltage and power dissipation. All are supplied in JEDEC TO-3 hermetic steel packages. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO(SUS) Collector-Emitter Voltage VCBO Collector-Base Voltage (*) VCER(SUS) Collector-Emitter Voltage RBE=100Ω VCEV(SUS) Collector-Emitter Voltage VBE=-1.5V VEBO Emitter-Base Voltage IC Collector Current IB Base Current Value 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 COMSET SEMICONDUCTORS Unit 45 80 40 55 100 50 55 85 45 55 90 50 5 7 5 V V V V V 15 A 7 A 1/4 2N6253 - 2N6254 - 2N6371 Symbol Ratings < 25°C PTOT Power Dissipation > 25°C TJ Junction Temperature TS Storage Temperature 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 Value Unit 115 150 117 Watts Derate Linearly to 200°C -65 to +200 °C THERMAL CHARACTERISTICS Symbol Ratings 2N6253 RthJ-C Thermal Resistance, Junction to Case 2N6254 2N6371 Value Unit 1.5 1.17 1.5 °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCE(SAT) Ratings Test Condition(s) IC=3 A, IB=0.3 IC=15 A, IB=5 IC=5 A, IB=0.5 Collector-Emitter Voltage (*) IC=15 A, IB=3 IC=8 A, IB=0.8 IC=16 A, IB=4 ICEO Collector-Emitter Cutoff Current IEBO Emitter-Base Cutoff Current VCE=25 V VCE=60 V VEB=-5 V VEB=-7 V 2N6253 2N6254 2N6371 2N6253 2N6371 2N6254 2N6253 2N6371 2N6254 COMSET SEMICONDUCTORS Min Typ Mx Unit - - 1 4 0.5 4 1.5 4 - - 1.5 - - 1.0 - - 10 0.5 2/4 V mA mA 2N6253 - 2N6254 - 2N6371 Ratings Test Condition(s) TC=150°C Symbol VCE=40 V VBE=-1.5 V 2N6371 - - 10 VCE=50 V VBE=-1.5 V 2N6253 - - 10 VCE=100 V VBE=1.5 V 2N6254 - - 5.0 VCE=45 V VBE=-1.5 V 2N6371 - - 2.0 VCE=55 V VBE=-1.5 V 2N6253 - - 2.0 VCE=100 V VBE=1.5 V 2N6254 - - 0.5 2N6253 2N6254 2N6371 45 80 40 - - 2N6253 55 - - 2N6254 85 - - V 2N6371 2N6253 2N6254 45 55 90 - - - V 2N6371 2N6253 2N6254 2N6371 50 20 3 20 5 15 4 - 1.7 1.5 4 70 70 60 - 2N6253 2N6254 2N6371 10 - - 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 800 2.55 1.87 2.9 - - VCEO(SUS) Collector-Emitter Sustaining IC=0.2 A, IB=0 A Voltage (*) VCER(SUS) Collector-Emitter Sustaining Voltage (*) IC=0.2 mA RBE=100Ω VCEV(SUS) VBE hFE mA Collector Cutoff Current TC=25°C ICEX Min Typ Mx Unit Base-Emitter Voltage (*) Base-Emitter Voltage (*) Static Forward Current transfer ratio (*) IC=0.1 A, VBE=-1.5 V VCE=4 V, IC=3 A VCE=2 V, IC=5 A VCE=4 V, IC=16 A VCE=4 V, IC=3 A VCE=4 V, IC=15 A VCE=2 V, IC=5 A VCE=4 V, IC=15 A VCE=4 V, IC=8 A VCE=4 V, IC=16 A hfe Small Signal Current Gain VCE=4 V, IC=1 A, f=1 kHz fT Transition Frequency VCE=4 V, IC=1 A VCE=45 V Is/b Second Breakdown Collector Current tp=1s, non rep. 2N6253 2N6254 2N6371 VCE=40 V (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% COMSET SEMICONDUCTORS 3/4 V V - - kHz A 2N6253 - 2N6254 - 2N6371 MECHANICAL DATA CASE TO-3 DIMENSIONS mm inches A 25,45 1 B 38,8 1,52 C 30,09 1,184 D 17,11 0,67 E 9,78 0,38 G 11,09 0,43 H 8,33 0,32 L 1,62 0,06 M 19,43 0,76 N 1 0,04 P 4,08 0,16 Pin 1 : Pin 2 : Case : Base Emitter Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice COMSET SEMICONDUCTORS 4/4