HMC524 v02.0907 GaAs MMIC I/Q MIXER 22 - 32 GHz Typical Applications Features The HMC524 is ideal for: Wide IF Bandwidth: DC - 3.5 GHz • Point-to-Point and Point-to-Multi-Point Radio Image Rejection: 23 dB 3 LO to RF Isolation: 50 dB High Input IP3: +20 dBm MIXERS - I/Q MIXERS / IRM - CHIP Die Size: 1.49 x 1.14 x 0.1 mm Functional Diagram General Description The HMC524 is a compact I/Q MMIC mixer which can be used as either an Image Reject Mixer or a Single Sideband Upconverter. The chip utilizes two standard Hittite double balanced mixer cells and a 90 degree hybrid fabricated in a GaAs MESFET process. All data shown below is taken with the chip mounted in a 50 Ohm test fixture and includes the effects of mil diameter x 20 mil length bond wires on each port. A low frequency quadrature hybrid was used to produce a 100 MHz USB IF output. This product is a much smaller alternative to hybrid style Image Reject Mixers and Single Sideband Upconverter assemblies. Electrical Specifi cations, TA = +25° C, IF= 100 MHz, LO = +17 dBm* Parameter Min. Frequency Range, RF/LO Frequency Range, IF Max. Min. 11 20 1 dB Compression (Input) 23 Typ. Max. 24 - 29.5 DC - 3.5 Conversion Loss (As IRM) Image Rejection Typ. 22 - 32 GHz DC - 3.5 14 10 20 +16 GHz 13 dB 23 dB +16 dBm LO to RF Isolation 30 40 30 40 dB LO to IF Isolation 12 18 12 18 dB dBm IP3 (Input) +20 +20 Amplitude Balance 0.2 0.4 dB 5 5 Deg Phase Balance * Unless otherwise noted, all measurements performed as downconverter. 3 - 88 Units For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC524 v02.0907 GaAs MMIC I/Q MIXER 22 - 32 GHz Data taken as IRM with External IF 90° Hybrid Conversion Gain vs. Temperature Image Rejection vs. Temperature 0 40 -5 -10 +25C -15 +85C -55C 30 3 25 20 15 +25C +85C -55C 10 5 -20 0 21 23 25 27 29 31 33 21 23 RF FREQUENCY (GHz) Conversion Gain vs. LO Drive 27 29 31 33 31 33 31 33 Return Loss 0 0 RF LO +13 dBm +15 dBm +17 dBm +19 dBm -5 RETURN LOSS (dB) CONVERSION GAIN (dB) 25 RF FREQUENCY (GHz) -10 -15 -20 -5 -10 -15 21 23 25 27 29 31 33 21 23 RF FREQUENCY (GHz) 25 27 29 FREQUENCY (GHz) Input P1dB vs. Temperature MIXERS - I/Q MIXERS / IRM - CHIP IMAGE REJECTION (dB) CONVERSION GAIN (dB) 35 Input IP3 vs. LO Drive 24 30 +25C +85C -55C 22 25 20 IP3 (dBm) P1dB (dBm) 20 18 16 15 10 LO = +13 dBm LO = +15 dBm LO = +17 dBm LO = +19 dBm 14 5 12 10 0 21 23 25 27 29 RF FREQUENCY (GHz) 31 33 21 23 25 27 29 RF FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 89 HMC524 v02.0907 GaAs MMIC I/Q MIXER 22 - 32 GHz Quadrature Channel Data Taken Without IF 90° Hybrid Isolations IF Bandwidth* -10 0 LO/IF2 -20 RESPONSE (dB) ISOLATION (dB) -30 RF/IF2 RF/IF1 -40 LO/RF -50 -10 -15 -20 -60 21 23 25 27 29 31 RETURN LOSS CONVERSION GAIN -25 0.5 33 1 RF FREQUENCY (GHz) 1.5 2 2.5 3 3.5 31 33 IF FREQUENCY (GHz) Amplitude Balance vs. LO Drive Phase Balance vs. LO Drive 10 3 2.5 2 PHASE BALANCE (degrees) AMPLITUDE BALANCE (dB) MIXERS - I/Q MIXERS / IRM - CHIP 3 -5 LO/IF1 1.5 1 0.5 0 -0.5 -1 LO = +13 dBm LO = +15 dBm LO = +17 dBm LO = +19 dBm -1.5 -2 5 0 LO = +13 dBm LO = +15 dBm LO = +17 dBm LO = +19 dBm -5 -2.5 -3 -10 21 23 25 27 29 31 21 33 23 RF FREQUENCY (GHz) Upconverter Performance Conversion Gain vs. LO Drive 27 29 Upconverter Performance Sideband Rejection vs. LO Drive 0 0 SIDEBAND REJECTION (dBc) CONVERSION GAIN (dB) 25 RF FREQUENCY (GHz) LO = +13 dBm LO = +15 dBm LO = +17 dBm LO = +19 dBm -5 -10 -15 -10 LO = +13 dBm LO = +15 dBm LO = +17 dBm LO = +19 dBm -20 -30 -40 -50 -20 21 23 25 27 29 31 RF FREQUENCY (GHz) 33 21 23 25 27 29 RF FREQUENCY (GHz) * Conversion gain data taken with external IF 90° hybrid 3 - 90 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 31 33 HMC524 v02.0907 Absolute Maximum Ratings +13 dBm LO Drive +27 dBm Channel Temperature 150°C MxN Spurious Outputs nLO mRF Continuous Pdiss (T=85°C) (derate 9.8 mW/°C above 85°C) 641 mW Thermal Resistance (RTH) (junction to die bottom) 102 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 deg °C ESD Sensitivity (HBM) Class 1A 0 1 0 xx -13 1 18 0 2 76 74 3 xx 4 xx 2 3 4 27 xx xx 35 52 xx 87 74 82 83 87 77 87 xx 82 87 87 RF = 24.5 GHz @ -10 dBm LO = 24.4 GHz @ 17 dBm Data taken without IF hybrid All values in dBc below IF power level ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard Alternate GP-2 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3 MIXERS - I/Q MIXERS / IRM - CHIP RF / IF Input GaAs MMIC I/Q MIXER 22 - 32 GHz NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” 4. BACKSIDE METALIZATION: GOLD 5. BOND PAD METALIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. OVERALL DIE SIZE ±.002” For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 91 HMC524 v02.0907 GaAs MMIC I/Q MIXER 22 - 32 GHz Pad Descriptions Pad Number Function Description 3 RF This pad is AC coupled and matched to 50 Ohms. 6 LO This pad is DC coupled and matched to 50 Ohms. 1 (4) IF2 2 (5) IF1 MIXERS - I/Q MIXERS / IRM - CHIP 3 3 - 92 GND Interface Schematic This pad is DC coupled. For applications not requiring operation to DC, this port should be DC blocked externally using a series capacitor whose value has been chosen to pass the necessary IF frequency range. For operation to DC, this pad must not source/sink more than 3mA of current or die nonfunction and possible die failure will result. Pads 4 and 5 are alternate IF ports. The backside of the die must be connected to RF/DC ground. Assembly Diagrams For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC524 v02.0907 GaAs MMIC I/Q MIXER 22 - 32 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). Handling Precautions 0.127mm (0.005”) Thick Alumina Thin Film Substrate Follow these precautions to avoid permanent damage. Figure 1. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. 3 MIXERS - I/Q MIXERS / IRM - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 93