ar y n i im prel iC-HQ HIGH-PERFORMANCE QUAD OPAMP Rev A1, Page 1/7 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Ultra low offset (< 1 µV) and offset drift Very low load dependent offset shift Built-in offset measurement for each OPAMP 5 V single supply Low supply current, typ. 350 µA/OPAMP Unity gain stability Input common mode range down to 0 V 1 mA rail-to-rail output Very low 1/f noise 140 dB open loop gain 130 dB common mode rejection ratio 135 dB power supply rejection ratio 2.5 V/µs slew rate 3.5 MHz gain-bandwidth product Tight matching of bandwidth and slew rate among all 4 OPAMPs ♦ Short circuit proof outputs Measuring amplifiers Instrumentation amplifiers Signal conditioners Encoder applications Audio applications High-impedance buffers A/D and D/A converters Battery operated devices GND-sensing applications PACKAGES TSSOP14 ♦ Option: iC-HQL (< 10 µV Offset) BLOCK DIAGRAM O1 1 IN1 2 14 O4 1 − + 4 + − 12 IP4 IP1 3 VDD 4 iC−HQ O2 7 Copyright © 2007 iC-Haus 11 GND 10 IP3 IP2 5 IN2 6 13 IN4 − + 2 + − 3 9 IN3 8 O3 http://www.ichaus.com ar y n i im prel iC-HQ HIGH-PERFORMANCE QUAD OPAMP Rev A1, Page 2/7 DESCRIPTION The iC-HQ contains four precision OPAMPs, operated from a common 5 V supply. The offset of less than 1 µV allows operation with a very high gain. The continuous offset cancellation principle results in ultra low offset temperature drift as well as exceptional suppression of the 1/f noise below 1 kHz. The validation of the specified offset voltage of each OPAMP is performed with built-in test circuitry as part of functional testing and quality assurance. All parameters influencing precision, like open loop gain, power supply rejection ratio, common mode rejection ratio and load rejection are extremely high and add to the offset voltage only in the sub-µV range. The 3.5 MHz gain-bandwidth makes this quad OPAMP ideally suited for signal processing tasks, where high frequencies have to be processed at a high gain. Unity gain stability is provided, thus the OPAMPs can also operate as buffers. The low supply current of 1.4 mA is particularly advantageous in battery operated devices. The input common mode range includes GND. The rail-to-rail outputs are capable of 1 mA and are unlimited shortcircuit proof. The input current I(IPx), I(INx) is typically below 5 pA at room temperature and below 100 pA throughout the whole temperature range. PACKAGES TSSOP14 to JEDEC PIN CONFIGURATION TSSOP14 (top view) O1 1 IN1 2 14 O4 1 − + 4 + − iC−HQ O2 7 11 GND 10 IP3 IP2 5 IN2 6 13 IN4 12 IP4 IP1 3 VDD 4 PIN FUNCTIONS No. Name Function − + 2 + − 3 9 IN3 8 O3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 O1 IN1 IP1 VDD IP2 IN2 O2 O3 IN3 IP3 GND IP4 IN4 O4 Output OPAMP1 Neg. input OPAMP1 Pos. input OPAMP1 Voltage supply Pos. input OPAMP2 Neg. input OPAMP2 Output OPAMP2 Output OPAMP3 Neg. input OPAMP3 Pos. input OPAMP3 Ground Pos. input OPAMP4 Neg. input OPAMP4 Output OPAMP4 iC-HQ HIGH-PERFORMANCE QUAD OPAMP ar y n i im prel Rev A1, Page 3/7 ABSOLUTE MAXIMUM RATINGS Beyond these values damage may occur; device operation is not guaranteed. Item No. Symbol Parameter Conditions Unit Min. Max. G001 VDD Supply Voltage -0.5 6 V G002 I(VDD) Current in VDD -10 80 mA G003 V() Voltage at IPx, INx -0.5 VDD + 0.5 V G004 I() Current in IPx, INx mA G005 V() Voltage at Ox G006 I() Current in Ox G007 VDiff() Input Difference Voltage V(IPx) − V(INx) G008 Vd() Susceptibility to ESD at all pins HBM, 100 pF discharged through 1.5 kΩ G009 Ts G010 Tj -5 5 -0.5 6 V -30 30 mA -6 6 V 1 kV Storage Temperature Range -40 150 °C Operating Junction Temperature -40 150 °C Referenced to GND, V(Ox) < VDD + 0.5 V THERMAL DATA Operation Conditions: VDD = 5 V ±10 % Item No. Symbol Parameter Conditions Unit Min. T01 Ta Operating Ambient Temperature Range T02 Rthja Thermal Resistance Chip/Ambient -40 SMD assembly, no additional cooling areas All voltages are referenced to ground unless otherwise stated. All currents into the device pins are positive; all currents out of the device pins are negative. Typ. Max. 125 °C 140 K/W iC-HQ HIGH-PERFORMANCE QUAD OPAMP ar y n i im prel Rev A1, Page 4/7 ELECTRICAL CHARACTERISTICS Operation Conditions: VDD = 5 V ±10 %, Tj = -40...125 °C, unless otherwise noted Item No. Symbol Parameter Conditions Unit Min. Typ. Max. Total Device 001 VDD Permissible Supply Voltage 002 I(VDD) Supply Current in VDD Total iC, all 4 OPAMPs without load 003 Vc(hi) Clamp Voltage hi at Ox VDD = 0 V, I() = 10 mA 004 Vc(lo) Clamp Voltage lo at Ox VDD = 0 V, I() = -10 mA 005 Vc(hi) Clamp Voltage hi IPx, INx VDD = 0 V, I() = 1 mA 0.3 1.8 006 Vc(lo) Clamp Voltage lo IPx, INx VDD = 0 V, I() = -1 mA -1.5 -0.3 007 CMRR Common Mode Rejection Ratio ∆Vos /∆Vcm bei ∆Vcm = 3.5 V 125 130 dB 008 PSRR Power Supply Rejection Ratio 125∗ 135 dB 009 AV0 Open Loop Gain 130 140 010 LRR Offset Shift vs. Power Dissipation ∆Vos at ∆Pv(O1...4) = 1 mW -0.3 0 0.3 µV -1 -1 -10 0 0 1 1.6 10 µV µV µV 0.01∗ µV/°C 400 pA Inputs IN1...4, IP1...4 101 Vos Offset Voltage 4.5 RL = 1 kΩ V()cm = 1.5 V, closed loop operation; iC-HQ Tj = -40...27 °C iC-HQ Tj = -40...125 °C iC-HQL Tj = -40...125 °C 5.5 V 2 mA 0.3 1.5 V -1.5 -0.3 1.2 1.5 -0.01∗ V V dB 102 dVos /dT Offset Voltage Drift 103 Ib() Input Current I(IPx), I(INx) 104 Ios () Input Offset Current -400 400 pA 105 Vcm () Input Voltage Range -0.1 VDD − 1.1 V 5 Outputs O1...4 201 V()hi Output Voltage hi at Ox VDD = 5 V, RL = 100 kΩ vs. GND 202 V()lo Output Voltage lo at Ox RL = 100 kΩ vs. VDD 4.95 4.987 11 30 mV V 203 Vs()hi Saturation Voltage hi at Ox Vs()hi = VDD − V(Ox), I() = -1.2 mA 250 600 mV 204 Vs()lo Saturation Voltage lo at Ox I() = 1.2 mA 125 250 mV 205 Isc()hi Short Circuit Current from Ox Short circuit Ox to GND -30 -12 -5 mA 206 Isc()lo Short Circuit Current in Ox Short circuit Ox to VDD 1.5 3.4 8 mA 1.75 2.5 3.6 Dynamic Parameters 301 SR Slew Rate at Ox RL = 10 kΩ, Av = -1, CL = 15 pF 302 GBP Gain bandwith product RL = 10 kΩ, CL = 15 pF 3.5 303 tset14 Settling time 14 Bit 1 V step, Av ≤ 100, 14 Bit 350 500∗ µs 304 tset10 Settling time 10 Bit 1 V step, Av ≤ 100, 10 Bit 150 300 µs 305 ton Start-up time 100 200 306 307 Vnoise Noise voltage Referenced to the input up to 1 Hz 600 en Noise density f = 3.5 kHz...3.5 MHz f = 2...10 kHz f = 100 Hz...5 kHz f = 1...100 Hz 38 70 134 160 ∗ Projected values by sample characterization. V/µs MHz µs nVSS √ nV/√Hz nV/√Hz nV/√Hz nV/ Hz iC-HQ HIGH-PERFORMANCE QUAD OPAMP ar y n i im prel Rev A1, Page 5/7 ELECTRICAL CHARACTERISTICS: Diagrams Figure 1: Noise spectra at Av = 100 iC-HQ HIGH-PERFORMANCE QUAD OPAMP ar y n i im prel Rev A1, Page 6/7 APPLICATIONS INFORMATION To preserve the offset specification of a precision device like the iC-HQ, the soldering points of both the iC and the external circuitry must not be exposed to different temperatures. Such sensitive devices must not be positioned near heat sources. Temperature differences at metallic junctions cause contact electrification which appears like offset voltage. In the worst case, this contact voltage may even exceed the OPAMP’s intrinsic offset by a wide margin. Under no circumstances should the temperature behaviour of such a module (designed for 1 µV offset) be tested using e.g. a hot air blower. Even measurements conducted in a climatic test cabinet require a steady, constant temperature. The offset specification of the iC-HQ is – due to the offset cancellation principle – only valid for closed loop operation. Therefore, the comparator mode requires a feedback to maintain its precision. A signal, which drives the OPAMP out of its control range for a short time, e.g. a steep input transition, in a follower configuration, is tolerable and will show the desired output response with high slew rate. In an open loop configuration, the continuous offset cancellation does not work. This specification is for a newly developed product. iC-Haus therefore reserves the right to change or update, without notice, any information contained herein, design and specification; and to discontinue or limit production or distribution of any product versions. Please contact iC-Haus to ascertain the current data. Copying – even as an excerpt – is only permitted with iC-Haus approval in writing and precise reference to source. iC-Haus does not warrant the accuracy, completeness or timeliness of the specification on this site and does not assume liability for any errors or omissions in the materials. The data specified is intended solely for the purpose of product description. No representations or warranties, either express or implied, of merchantability, fitness for a particular purpose or of any other nature are made hereunder with respect to information/specification or the products to which information refers and no guarantee with respect to compliance to the intended use is given. In particular, this also applies to the stated possible applications or areas of applications of the product. iC-Haus conveys no patent, copyright, mask work right or other trade mark right to this product. iC-Haus assumes no liability for any patent and/or other trade mark rights of a third party resulting from processing or handling of the product and/or any other use of the product. iC-HQ HIGH-PERFORMANCE QUAD OPAMP ar y n i im prel Rev A1, Page 7/7 ORDERING INFORMATION Type Package Order Designation iC-HQ (1 µV) iC-HQL (10 µV) TSSOP14 TSSOP14 iC-HQ TSSOP14 iC-HQL TSSOP14 For technical support, information about prices and terms of delivery please contact: iC-Haus GmbH Am Kuemmerling 18 D-55294 Bodenheim GERMANY Tel.: +49 (61 35) 92 92-0 Fax: +49 (61 35) 92 92-192 Web: http://www.ichaus.com E-Mail: [email protected] Appointed local distributors: http://www.ichaus.de/support_distributors.php