ISC 2SC2365

Inchange Semiconductor
Product Specification
2SC2365
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・High breakdown voltage
APPLICATIONS
・For use in switch-mode CTV supply
systems
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
600
V
VCEO
Collector-emitter voltage
Open base
500
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
6
A
ICM
Collector current-peak
8
A
PC
Collector power dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC2365
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
500
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=4A; IB=1.25A
3.0
V
VBEsat
Base-emitter saturation voltage
IC=4A; IB=1.25A
1.6
V
ICBO
Collector cut-off current
VCB=600V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
0.1
mA
hFE
DC current gain
IC=3A ; VCE=4V
Transition frequency
IC=0.5A ; VCE=10V
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
12
10
MHz
Inchange Semiconductor
Product Specification
2SC2365
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3