isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU506F DESCRIPTION ·High Voltage ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers and in line-operated switch-mode applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage-VBE=0 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current-Continuous 3 A IBM Base Current-Peak 5 A PC Collector Power Dissipation @ TC=25℃ 20 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc Website：www.iscsemi.cn MAX UNIT 6.35 ℃/W 55 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU506F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0; L= 25mH VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1.33A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 1.33A 1.3 V ICES Collector Cutoff Current VCE= VCESmax; VBE= 0 VCE= VCESmax; VBE= 0;TJ= 125℃ 0.5 1 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 mA hFE DC Current Gain IC= 3A ; VCE= 5V 700 UNIT V B B 2.25 Switching Times; Resistive load tstg Storage Time 6.5 μs 0.7 μs IC= 3A , IB(end)= 1A; LB= 12μH tf Fall Time isc Website：www.iscsemi.cn 2