ISC BU2508DW

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BU2508DW
DESCRIPTION
·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 700V (Min)
·High Switching Speed
·Built-in Damper Diode
APPLICATIONS
·Designed for use in horizontal deflection circuits of
color TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector- Emitter Voltage(VBE= 0)
1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
7.5
V
IC
Collector Current- Continuous
8
A
ICM
Collector Current-Peak
15
A
IB
Base Current- Continuous
4
A
IBM
Base Current-Peak
6
A
PC
Collector Power Dissipation
@ TC=25℃
125
W
TJ
Junction Temperature
150
℃
-65~150
℃
B
Tstg
Storage Temperature Range
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.0
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BU2508DW
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA ; IB= 0,L= 25mH
700
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 600mA; IC= 0
7.5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 4.5A; IB= 1.12A
1.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 4.5A; IB= 1.7A
1.1
V
ICES
Collector Cutoff Current
VCE= 1500V ; VBE= 0
VCE= 1500V ; VBE= 0; TC=125℃
1.0
2.0
mA
IEBO
Emitter Cutoff Current
VEB= 7.5V ; IC= 0
390
mA
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
hFE-2
DC Current Gain
IC= 4.5A ; VCE= 1V
VECF
C-E Diode Forward Voltage
IF= 4.5A
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
140
13
4
7
2.0
80
V
pF
Switching times
tstg
tf
Storage Time
6.0
μs
0.6
μs
IC= 4.5A , IB(end)= 1.1A; LB= 6μH
-VBB= 4V; (-dIB/dt= 0.6A/μs)
Fall Time
isc Website:www.iscsemi.cn
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