ISC BU508AW

Inchange Semiconductor
Product Specification
BU508AW
Silicon NPN Power Transistors
DESCRIPTION
・With TO-247 package
・High voltage
・High speed switching
APPLICATIONS
・For use in horizontal deflection circuits
of colour TV receivers.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-247) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
IC
Collector current (DC)
8
A
ICM
Collector current -peak
15
A
IB
Base current (DC)
4
A
IBM
Base current -peak
6
A
Ptot
Total power dissipation
125
W
TC=25℃
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
Inchange Semiconductor
Product Specification
BU508AW
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0,L=25mH
VCEsat
Collector-emitter saturation voltage
IC=4.5A ;IB=1.6A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=4.5A ;IB=2A
1.1
V
ICES
Collector cut-off current
VCE=RatedVCE; VBE=0
TC=125℃
1.0
2.0
mA
IEBO
Emitter cut-off current
VEB=6.0V; IC=0
10
mA
hFE
DC current gain
IC=100mA ; VCE=5V
fT
Transition frequency
IE=0.1A ; VCE=5V
Cob
Output capacitance
VCB=10V;IE=0;f=1.0MHz
2
MIN
TYP.
MAX
700
6
UNIT
V
13
30
7
MHz
125
pF
Inchange Semiconductor
Product Specification
BU508AW
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3