isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUL128 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.7V(Max) @ IC= 0.5A ·Very High Switching Speed APPLICATIONS ·Designed for use in lighting applications and low cost switchmode power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 4 A ICM Collector Current-peak tp<5ms 8 A IB Base Current-Continuous 2 A IBM Base Current-peak tp<5ms 4 A PC Collector Power Dissipation TC=25℃ 70 W Ti Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.78 ℃/W Rth j-A Thermal Resistance,Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUL128 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5A; IB= 0.1A 0.7 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A 1.0 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.5 V VCE(sat)-4 Collector-Emitter Saturation Voltage IC= 4A; IB= 1A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 0.5A; IB= 0.1A 1.1 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A 1.2 V VBE(sat)-3 Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.3 V ICES Collector Cutoff Current VCE= 700V; VBE= -1.5V VCE= 700V; VBE= -1.5V,TC= 125℃ 0.1 0.5 mA ICEO Collector Cutoff Current VCE= 400V; IB= 0 0.25 mA hFE-1 DC Current Gain IC= 10mA; VCE= 5V 10 hFE-2 DC Current Gain IC= 2A; VCE= 5V 14 400 V 9 V B 0.5 B B V 40 Switching Times, Resistive Load ts Storage Time tf Fall Time hFE-2 Classifications A B 14-28 25-40 isc Website：www.iscsemi.cn IC= 2A; VCC= 125V; IB1= -IB2= 0.4A; tp= 30μs 3.0 μs 0.4 μs