isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV70 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 600V (Min) ·High Power Dissipation ·Fast Switching Speed APPLICATIONS ·Designed for motor controls, switching mode power supplies applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 3 A IBM Base Current-peak 6 A PC Collector Power Dissipation @TC=25℃ 140 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.89 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV70 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; LC= 125mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 9A; IB= 3A 1.8 V VBE(sat) Base-Emitter Saturation Voltage IC= 9A; IB= 3A 2.0 V ICES Collector Cutoff Current VCE= 1300V; VBE= 0 VCE= 1200V; VBE= 0; TC=125℃ 1.0 2.0 mA hFE-1 DC Current Gain IC= 3.2A; VCE= 2V 5 hFE-2 DC Current Gain IC= 1.5A; VCE= 5V 7 hFE-3 DC Current Gain IC= 6A; VCE= 2V 5 Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V, f= 1MHz fT CONDITIONS MIN MAX UNIT 600 V 6 V B B 9 MHz Switching times Resistive Load ton Turn-on Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 5A; IB1= -IB2= 1A; VCC= 250V; tp= 20μs 0.5 μs 4.0 μs 0.6 μs