Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP145/146/147 DESCRIPTION ・With TO-3PN package ・DARLINGTON ・High DC current gain ・Complement to type TIP140/141/142 APPLICATIONS ・Designed for general–purpose amplifier and low frequency switching applications. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS TIP145 VCBO VCEO Collector-base voltage Collector-emitter voltage TIP146 Open emitter Emitter-base voltage IC -80 TIP147 -100 TIP145 -60 TIP146 UNIT -60 Open base TIP147 VEBO VALUE -80 V V -100 Open collector -5 V Collector current-DC -10 A ICM Collector current-peak -15 A IB Base current-DC -0.5 A PC Collector power dissipation 125 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT TC=25℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal resistance junction to case 1.0 ℃/W Rth j-A Thermal resistance case to ambient 35.7 ℃/W Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP145/146/147 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS TIP145 VCEO(SUS) Collector-emitter sustaining voltage TIP146 MIN TYP. MAX UNIT -60 IC=-30mA, IB=0 V -80 -100 TIP147 VCEsat-1 Collector-emitter saturation voltage IC=-5A ,IB=-10mA -2.0 V VCEsat-2 Collector-emitter saturation voltage IC=-10A ,IB=-40mA -3.0 V Base-emitter saturation voltage IC=-10A ,IB=-40mA -3.5 V Base-emitter on voltage IC=-10A ; VCE=-4V -3.0 V -1 mA -2 mA -2 mA VBEsat VBE ICBO ICEO Collector cut-off current Collector cut-off current TIP145 VCB=-60V, IE=0 TIP146 VCB=-80V, IE=0 TIP147 VCB=-100V, IE=0 TIP145 VCE=-30V, IB=0 TIP146 VCE=-40V, IB=0 TIP147 VCE=-50V, IB=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-5A ; VCE=-4V 1000 hFE-2 DC current gain IC=-10A ; VCE=-4V 500 Switching times td Delay time tr Rise time tstg tf Storage time VCC =-30 V, IC = -5.0 A, IB =-20 mA Duty Cycle≤20% IB1 = IB2, RC & RB Varied, TJ = 25℃ Fall time 2 0.15 μs 0.55 μs 2.5 μs 2.5 μs Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.1mm) 3 TIP145/146/147 Inchange Semiconductor Product Specification Silicon PNP Darlington Power Transistors 4 TIP145/146/147