HiPerFETTM Power MOSFETs IXFK 48N55 IXFX 48N55 Single MOSFET Die VDSS = 550 V ID25 = 48 A RDS(on) = 110 mW trr £ 250 ns Avalanche Rated Preliminary data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 550 550 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C EAR EAS TC = 25°C TC = 25°C dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W 48 192 44 A A A 60 3 mJ J 5 V/ns W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque Weight TO-264 0.9/6 Nm/lb.in. PLUS 247 TO-264 6 10 Symbol Test Conditions VDSS VGS = 0 V, ID = 3mA 550 VDS = VGS, ID = 8mA 2.5 VGS(th) g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. V 4.5 V IGSS VGS = ±20 V, VDS = 0 ±200 nA IDSS VDS = VDSS VGS = 0 V 100 mA 2 mA RDS(on) VGS = 10 V, ID = 0.5 • ID25 Note 1 TJ = 125°C IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved (TAB) D TO-264 AA (IXFK) (TAB) D TC = 25°C TL G G 560 PD PLUS 247TM (IXFK) 110 mW G = Gate S = Source S D = Drain TAB = Drain Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control • Temperature and lighting controls Advantages • PLUS 247TM package for clip or spring mounting • Space savings • High power density 98712 (3/24/00) 1-2 IXFK 48N55 IXFX 48N55 Symbol Test Conditions gfs VDS = 10 V; ID = 0.5 • ID25 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 1 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 W (External), tf 30 40 S 8900 pF 1000 pF 330 pF 42 ns 55 ns 110 ns 45 ns 330 nC 60 nC 65 nC PLUS247TM (IXFX) Outline Dim. Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.22 0.15 RthCK Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 48 A Repetitive; pulse width limited by TJM 192 A IF = IS, VGS = 0 V, Note 1 1.3 V 250 ns t rr QRM K/W IF = IS, -di/dt = 100 A/ms, VR = 100 V IRM 1.4 mC 8 A A A1 A2 b b1 b2 C D E e L L1 Q R © 2000 IXYS All rights reserved Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 TO-264 AA Outline Dim. Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 % Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 2-2