IXYS IXGM17N100

VCES
Low VCE(sat) IGBT
High speed IGBT
IXGH/IXGM 17 N100 1000 V 34 A
IXGH/IXGM 17 N100A 1000 V 34 A
Symbol
Test Conditions
VCES
TJ = 25°C to 150°C
1000
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
1000
V
Maximum Ratings
VGES
Continuous
±20
V
VGEM
Transient
±30
V
I C25
TC = 25°C
34
A
I C90
TC = 90°C
17
A
I CM
TC = 25°C, 1 ms
68
A
SSOA
(RBSOA)
VGE = 15 V, T VJ = 125°C, RG = 82 Ω
Clamped inductive load, L = 300 µH
ICM = 34
@ 0.8 VCES
A
PC
TC = 25°C
150
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
Md
IC25
Mounting torque (M3)
1.13/10 Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
VCE(sat)
3.5 V
4.0 V
TO-247 AD (IXGH)
G
C
E
TO-204 AE (IXGM)
C
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
International standard packages
2nd generation HDMOSTM process
Low VCE(sat)
- for low on-state conduction losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Voltage rating guaranteed at high
temperature (125°C)
l
l
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
°C
300
l
l
l
l
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
l
BVCES
IC
= 3 mA, VGE = 0 V
VGE(th)
IC
= 250 µA, VCE = VGE
ICES
VCE = 0.8 • VCES
VGE = 0 V
I GES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
1000
2.5
V
5
V
l
l
l
= IC90, VGE = 15 V
TJ = 25°C
TJ = 125°C
17N100
17N100A
250
1
µA
mA
±100
nA
3.5
4.0
V
V
l
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
High power density
l
l
© 1996 IXYS All rights reserved
91515E (3/96)
IXGH 17N100
IXGH 17N100A
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
I C = I C90; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
6
Cies
15
pF
175
pF
Cres
40
pF
Qg
100
120
nC
20
30
nC
60
90
nC
Q ge
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°°C
100
ns
IC = IC90, VGE = 15 V, L = 300 µH,
VCE = 0.8 VCES , RG = Roff = 82 Ω
200
ns
Remarks: Switching times
may increase
for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
500
1000
ns
17N100
17N100A
750
450
750
ns
ns
17N100A
3
mJ
100
ns
Inductive load, TJ = 125°°C
IC = IC90, VGE = 15 V, L = 300 µH
VCE = 0.8 VCES , RG = Roff = 82 Ω
Remarks: Switching times
may increase
for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
200
ns
2.5
mJ
700
1000
ns
17N100
17N100A
1200
750
2000
1000
ns
ns
17N100
17N100A
8
6
mJ
mJ
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
TO-204AE Outline
0.83 K/W
RthJC
RthCK
TO-247 AD Outline
S
1500
Coes
IXGM 17N100
IXGM 17N100A
0.25
K/W
IXGH 17N100 and IXGH 17N100 A characteristic curves are located on the
IXGH 17N100U1 and IXGH 17N100AU1 data sheets.
1 = Gate
2 = Emitter
Case = Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025