SEMICONDUCTOR KDV172S TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE VHF UHF BAND RF ATTENUATOR APPLICATIONS. AGC FOR AM/FM TUNER. E B L FEATURES L Low Capacitance : CT=0.25[pF] (Typ.) D ] (Typ.). 2 H A Designed for low Inter Modulation. 3 G Low Series resistance : rS=7[ 1 Reverse Voltage SYMBOL RATING UNIT VR 50 V J K CHARACTERISTIC ) C MAXIMUM RATING (Ta=25 P N P DIM A MILLIMETERS _ 0.20 2.93 + B C 1.30+0.20/-0.15 1.30 MAX D 0.45+0.15/-0.05 E G 2.40+0.30/-0.20 1.90 H J 0.95 0.13+0.10/-0.05 K 0.00 ~ 0.10 L 0.55 0.20 MIN 1.00+0.20/-0.10 7 M N P M 3 1. ANODE 2 Forward Current IF 50 Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range mA 2. ANODE 1 3. CATHODE 1 / CATHODE 2 2 1 SOT-23 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Voltage VR IR=10 A 50 - - V Reverse Current IR VR=50V - - 0.1 A Forward Voltage VF IF=50mA - 0.95 - V Total Capacitance CT VR=50V, f=1MHz - 0.25 - pF Series Resistance rs IF=10mA, f=100MHz - 7.0 - Marking Lot No. Type Name 2007. 7. 2 Revision No : 0 UE 1/2 KDV172S C T - VR 2k f=1MHz Ta=25 C SERIES RESISTANCE r s (Ω) TOTAL CAPACITANCE C T (pF) 2 rs - IF 1 0.5 0.3 100 0.6 0.8 Ta=25 C f=0.2GHz 1.0 50 30 1.0 0.8 0.6 0.4 10 5 f=0.2GHz 0.1 2 1 3 5 10 REVERSE VOLTAGE VR (V) 2007. 7. 2 1k 500 300 0.4 Revision No : 0 30 50 10µ 100µ 1m 10m 50m FORWARD CURRENT I F (A) 2/2