SEMICONDUCTOR KGT25N120NDA TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. A N O B Q H I FEATURES R C J F K ・High speed switching G ・High system efficiency ・Soft current turn-off waveforms D E L ・Extremely enhanced avalanche capability M d P 1 P 2 T 3 DIM MILLIMETERS _ 0.20 A 15.60 + _ 0.20 B 4.80 + _ 0.20 C 19.90 + _ 0.20 D 2.00 + _ 0.20 d 1.00 + _ 0.20 E 3.00 + _ 0.20 3.80 + F _ 0.20 G 3.50 + _ 0.20 H 13.90 + _ 0.20 I 12.76 + _ 0.20 J 23.40 + K 1.5+0.15-0.05 _ 0.30 L 16.50 + _ 0.20 M 1.40 + _ 0.20 13.60 + N _ 0.20 9.60 + O _ 0.30 P 5.45 + _ 0.10 Q 3.20 + _ 0.20 R 18.70 + 0.60+0.15-0.05 T 1. GATE 2. COLLECTOR 3. EMITTER TO-3P(N)-E MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate-Emitter Voltage VGES ±20 V 50 A 25 A ICM* 90 A IF 25 A IFM 150 A 310 W 125 W Tj 150 ℃ Tstg -55 to + 150 ℃ @Tc=25℃ Collector Current @Tc=100℃ Pulsed Collector Current Diode Continuous Forward Current @Tc=100℃ Diode Maximum Forward Current Maximum Power Dissipation @Tc=25℃ @Tc=100℃ Maximum Junction Temperature Storage Temperature Range IC PD C G E *Repetitive rating : Pulse width limited by max. junction temperature E C THERMAL CHARACTERISTIC CHARACTERISTIC G SYMBOL MAX. UNIT Thermal Resistance, Junction to Case (IGBT) RθJC 0.4 ℃/W Thermal Resistance, Junction to Case (DIODE) RθJC 2.8 ℃/W Thermal Resistance, Junction to Ambient RθJA 40 ℃/W 2009. 10. 29 Revision No : 0 1/8 KGT25N120NDA ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL Collector-Emitter Breakdown Voltage BVCES TEST CONDITION MIN. TYP. MAX. UNIT 1200 - - V Static VGE=0V , IC=1mA Collector Cut-off Current ICES VGE=0V, VCE=1200V - - 1.0 mA Gate Leakage Current IGES VCE=0V, VGE=±20V - - ±100 nA VGE(th) VGE=VCE, IC=25mA 4.0 5.5 7.0 V VGE=15V, IC=25A - 1.95 2.30 V VGE=15V, IC=25A, TC = 125℃ - 2.25 - V VGE=15V, IC=50A - 2.50 - V - 200 300 nC - 20 - nC Gate Threshold Voltage Collector-Emitter Saturation Voltage VCE(sat) Dynamic Total Gate Charge Qg Gate-Emitter Charge Qge Gate-Collector Charge Qgc - 80 - nC Turn-On Delay Time td(on) - 60 - ns tr - 50 - ns - 290 - ns - 100 - ns - 4.1 6.1 mJ Rise Time Turn-Off Delay Time Fall Time VCC=600V, VGE=15V, IC= 25A td(off) tf VCC=600V, IC=25A, VGE=15V,RG=10Ω Inductive Load, TC = 25℃ Turn-On Switching Loss Eon Turn-Off Switching Loss Eoff - 0.86 1.4 mJ Total Switching Loss Ets - 4.96 7.5 mJ Turn-On Delay Time td(on) - 60 - ns tr - 50 - ns - 300 - ns - 150 - ns - 4.3 6.3 mJ Rise Time Turn-Off Delay Time Fall Time td(off) tf VCC=600V, IC=25A, VGE=15V, RG=10Ω Inductive Load, TC = 125℃ Turn-On Switching Loss Eon Turn-Off Switching Loss Eoff - 1.2 2.1 mJ Total Switching Loss Ets - 5.5 8.4 mJ Input Capacitance Cies - 3100 - pF Ouput Capacitance Coes - 100 - pF Reverse Transfer Capacitance Cres - 80 - pF 2009. 10. 29 Revision No : 0 VCE=30V, VGE=0V, f=1MHz 2/8 KGT25N120NDA ELECTRICAL CHARACTERISTIC OF DIODE CHARACTERISTIC SYMBOL VF Diode Forward Voltage MIN. TYP. MAX. TC=25 - 1.8 2.5 TC=125 - 1.9 - TC=25 - 230 330 TC=125 - 300 - IF = 25A TC=25 - 27 35 di/dt = 200A/μs TC=125 - 31 - TC=25 - 3100 4700 TC=125 - 4650 - IF = 25A trr Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge 2009. 10. 29 TEST CONDITION Irr Qrr Revision No : 0 UNIT V ns A nC 3/8 KGT25N120NDA Typical Performance Characteristics Fig 2. Saturation Voltage Characteristics Fig 1. Saturation Voltage Characteristics 180 100 ← 120 100 80 8V 60 40 Common Emitter VGE = 15V 80 TC = 25 C TC = 125 C 60 40 20 Common Emitter TC=25 C 20 0 0 Collector - Emitter Voltage VCE (V) Collector Current IC (A) 15V 140 10V 12V 2 4 6 8 0 0 10 1 4 Fig 3. Saturation Voltage vs. Case Temperature Fig 4. Saturation Voltage vs. VGE 3.0 Common Emitter VGE = 15V 40A 2.5 IC = 25A 2.0 1.5 100 75 50 Common Emitter TC = 25 C 16 12 8 40A 25A IC = 12.5A 4 0 0 125 4 8 12 5000 Common Emitter TC = 125 C Ciss Common Emitter VGE = 0V, f = 1MHZ T = 25 C 4500 16 Capacitance (pF) 4000 12 8 40A 8 3000 Coss 2500 2000 1500 Crss 500 IC = 12.5A 4 C 3500 1000 25A 0 20 Fig 6. Capacitance Characteristics 20 0 16 Gate - Emitter Voltage VGE (V) Fig 5. Saturation Voltage vs. VGE 4 5 20 Case Temperature TC ( C ) Collector - Emitter Voltage VCE (V) 3 Collector - Emitter Voltage VCE (V) 25 12 16 Gate - Emitter Voltage VGE (V) 2009. 10. 29 2 Collector - Emitter Voltage VCE (V) Collector - Emitter Voltage VCE (V) Collector Current IC (A) 20V 160 Revision No : 0 20 0 1 10 40 Collector - Emitter Voltage VCE (V) 4/8 KGT25N120NDA Typical Performance Characteristics (Continued) Fig 7. Turn-On Characteristics vs. Gate Resistance Fig 8. Turn-Off Characteristics vs. Gate Resistance td(off) 1000 Switching Time (ns) Switching Time (ns) 100 td(on) tr Common Emitter VCC = 600V, VGE = 15V IC = 25A TC = 25 C TC = 125 C 10 tf 100 Common Emitter VCC = 600V, VGE = 15V IC = 25A TC = 25 C TC = 125 C 10 0 10 20 30 40 50 60 70 0 10 20 Gate Resistance RG (Ω) 60 70 100 Eoff 1 Common Emitter VCC = 600V, VGE = 15V IC = 25A TC = 25 C TC = 125 C 0.1 0 10 20 30 40 50 60 Switching Time (ns) td(on) Eon Switching Loss (mJ) 50 Fig 10. Turn-On Characteristics vs. Collector Current 10 tr Common Emitter VGE = 15V, RG = 10Ω TC = 25 C TC = 125 C 10 70 0 20 30 40 50 Collector Current IC (Α) Gate Resistance RG (Ω) Fig 11. Turn-Off Characteristics vs. Collector Current Fig 12. Switching Loss vs. Collector Current 10.0 1000 Switching Loss (mJ) td(off) Switching Time (ns) 40 Gate Resistance RG (Ω) Fig 9. Switching Loss vs. Gate Resistance 100 tf Common Emitter VGE = 15V, RG = 10Ω TC = 25 C TC = 125 C 10 0 10 20 30 Collector Current IC (Α) 2009. 10. 29 30 Revision No : 0 40 Eon 1.0 Eoff Common Emitter VGE = 15V, RG = 10Ω TC = 25 C TC = 125 C 0.1 50 0 10 20 30 40 50 Collector Current IC (Α) 5/8 KGT25N120NDA Typical Performance Characteristics (Continued) Fig 13. Gate Charge Characteristics 100.00 Common Emitter RL = 24Ω TC = 25 C 14 50µs Collector Current IC (A) Gate-Emitter Voitage VGE (V) 16 Fig 14. SOA Characteristics 600V 12 Vcc = 200V 400V 10 8 6 4 2 10.00 200µs 10ms 0.10 0.01 0 0 20 40 60 80 100 120 140 160 180 200 1ms 1.00 DC Operation Single nonrepetitive pulse Tc= 25 C Curves must be derated linearly with increase in temperature 0.1 10 1 100 1000 Collector-Emitter Voltage VCE (V) Gate Charge Qg (nC) Fig 15. Turn-Off SOA Collector Current IC (A) 100 10 1 Turn-Off Safe Operating Area VGE = 15V, TC =125 C 1 10 100 1000 Collector-Emitter Voltage VCE (V) Fig 16. Transient Thermal Impedance of IGBT Thermal Resistance (Zthjc) 10.000 1.000 0.5 0.100 0.2 0.1 PDM 0.05 0.010 t1 0.02 t2 0.01 1. Duty factor D=t1/t2 2. Peak Tj = Pdm Zthjc + TC Single Pluse 0.001 1E-5 1E-4 1E-3 1E-2 1E-1 1E+00 1E+01 Rectangular Pulse Duration (sec) 2009. 10. 29 Revision No : 0 6/8 KGT25N120NDA Typical Performance Characteristics Fig 17. Forward Characteristics Reverse Recovery Current IRRM (A) Forward Current IF (A) 50 Fig 18. Reverse Recovery Current TC = 25 C TC = 125 C 10 1 TC = 125 C TC = 25 C 0.1 0 0.4 0.8 1.2 1.6 2.0 2.4 Forward Voltage VF (V) 30 25 di/dt=200A/µs 20 15 di/dt=100A/µs 10 5 0 0 5 10 15 20 25 Forward Current IF (A) Fig 19. Reverse Recovery Time Reverse Recovery Time trr (ns) 400 300 di/dt=100A/µs 200 di/dt=200A/µs 100 0 0 5 10 15 20 25 Forward Current IF (A) 2009. 10. 29 Revision No : 0 7/8 KGT25N120NDA Definition Switching Time & Loss. Fig 21. Switching Test Circuit Diode Clamp /DUT C L G E _ + -10V Measurement Pulse + _ 600V C DUT/ DRIVER Rg G E VGE = 15V Fig 22. Definition Switching Time & Loss GATE VOLTAGE DUT 10% + Vg Vce OUT VOLTAGE AND CURRENT Vce Vcc 90% Vge + Vge + Vg 10% Ic Ic Ipk 90% Ic 10% Vce Ic Ic td (off) tf t2 Eoff = Vce Ic dt t1 ∫ t2 Eon = Vce Ic dt t1 ∫ tr td (on) 90% Ic 10% Ic t1 t2 t1 t2 Fig 23. Definition Diode Switching Time trr Ic tx ∫ Qrr = trr Ic dt tx 10% Irr Vcc Vpk DIODE REVERSE WAVEFORMS 2009. 10. 29 Revision No : 0 8/8