SEMICONDUCTOR PG05MSSMA TECHNICAL DATA Single Line TVS Diode for ESD Protection Protection of Voltage Sensitive Components. E 2 FEATURES H A ・Low profile package. D ・400 Watts peak pulse power.(tp=10/1000㎲) E ・Transient protection for data line to APPLICATIONS 1 ・Communication Systems. C B ・Automotive. DIM A B C D E F G H ・Power Supplies. F ・Notebooks, Desktops & Servers. G 1. ANODE MILLIMETERS _ 0.2 4.5 + _ 0.2 2.6 + _ 0.2 1.5 + _ 0.3 5.0 + _ 0.3 1.2 + _ 0.2 2.0 + 0 ~ 0.15 R 0.5 2. CATHODE MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Peak Pulse Power * (tP=10/1000㎲) PPK 400 W Peak Pulse Current (tP=10/1000㎲) IPP 43.5 A Operating Temperature Tj -55～150 ℃ Tstg -55～150 ℃ Storage Temperature SMA Marking Type Name T05 * Notes) : (1) Derated above Ta=25℃ per power derating curve. (2) Mounted on 0.31×0.31”(8.0×8.0㎜) copper pads to each terminal. Lot No. 2 1 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Reverse Stand-Off Voltage SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VRWM - - - 5 V 6.4 6.7 7.0 V VBR Reverse Breakdown Voltage It=10mA Reverse Leakage Current IR VRWM=5V - - 400 μA Clamping Voltage VC IPP=43.5A, tp=10/1000μs - - 9.2 V 2007. 1. 30 Revision No : 0 1/2 PG05MSSMA POWER DERATION CURVE 100 RATED POWER OR IPP (%) PEAK PULSE POWER PPK (kW) NON-REPETITIVE PEAK PULSE POWER vs. PULSE TIME 10 1 0.1 120 100 80 60 40 20 0 10-4 0.001 0.01 0.1 1 10 PULSE DURATION tP (ms) 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta ( C) PEAK PULSE CURRENT IPP (%) PULSE WAVEFORM 120 ≤=10µs 100 PEAK VALUE Ippm 80 60 HALF VALUE Ipp/2 40 20 td 0 0 1 2 3 4 5 TIME (ms) 2007. 1. 30 Revision No : 0 2/2