THYRISTOR MODULE PDT2018 PDH2018 200A / 800V OUTLINE DRAWING FEATURES * 108mm Short Size Case * Isolated Base * Dual Thyristors or Thyristor and Diode Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS PDT PDH * AC phase control Maximum Ratings Parameter Repetitive Peak Off-State Voltage Non Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Reverse Voltage Approx Net Weight:280g Symbol IO(AV) RMS On-State Current IT(RMS) I Squared t 800 960 800 960 Conditions Average Rectified Output Current IFSM I2t Critical Rate of Turned-On Current di/dt Peak Gate Power Average Gate Power Peak Gate Current Peak Gate Voltage Peak Gate Reverse Voltage Operating JunctionTemperature Range Storage Temperature Range Isoration Voltage Case mounting Mounting torque Terminals Value per 1 Arm PGM PG(AV) IGM VGM VRGM Tjw Tstg Viso Ftor Unit PDT/PDH2018 VDRM VDSM VRRM VRSM arameter Surge Forward Current Grade 50Hz Half Sine Wave condition Tc=65°C 50 Hz Half Sine Wave,1cycle Non-Repetitive 2msec to 10msec VD=2/3VDRM, ITM=2 IO, Tj=125°C IG=300mA, diG/dt=0.2A/µs • V V Max Rated Value Unit 200 A 314 A 4000 A 80000 A2s 100 A/µs 5 W 1 W 2 A 10 V 5 V -40 to +125 °C -40 to +125 °C Base Plate to Terminals, AC1min 2500 V M6 Screw 2.5 to 3.5 N•m M6 Screw 2.5 to 3.5 Electrical • Thermal Characteristics Symbol Test Conditions Peak Off-State Current Peak Reverse Current Peak On-State Voltage IDM IRM VTM Gate Current to Trigger IGT Gate Voltage to Trigger VGT Gate Non-Trigger Voltage Critical Rate of Rise of Off-State Voltage VGD VDM= VDRM, Tj=125°C VRM= VRRM, Tj= 125°C ITM= 600A, Tj=25°C Tj=-40°C VD=6V,IT=1A Tj=25°C Tj=125°C Tj=-40°C VD=6V,IT=1A Tj=25°C Tj=125°C VD=2/3VDRM Tj=125°C Maximum Value. Min. Typ. Max. 30 30 1.34 300 150 80 5 3 2 0.25 VD=2/3VDRM Tj=125°C 500 Characteristics Turn-Off Time Turn-On Time Delay Time Rise Time Latching Current Holding Current Thermal Resistance Value Per 1Arm dv/dt ITM=IO,VD=2/3VDRM dv/dt=20V/µs, VR=100V -di/dt=20A/µs, Tj=125°C tgt Tj=25°C, ITM=IT(RMS) VD=2/3VDRM, IG=300mA td diG/dt=0.2A/µs tr IL Tj=25°C IH Tj=25°C Rth(j-c) Junction to Case Base Plate to Heat Sink Rth(c-f) with Thermal Compound tq Unit mA mA V mA V V V/µs 100 µs 6 2 4 100 60 µs µs µs mA 0.23 0.15 °C/W PDT/PDH2018 OUTLINE DRAWING (Dimensions in mm) ON-STATE CURRENT VS. VOLTAGE PDT/PDH2018 5000 2000 1000 INSTANTANEOUS ON-STATE CURRENT (A) 500 200 100 50 20 Tj=25°C Tj=125°C 10 5 2 0 1 2 3 INSTANTANEOUS ON-STATE VOLTAGE (V) 4 AVERAGE ON-STATE POWER DISSIPATION for PDT/PDH2018 AVERAGE ON-STATE POWER DISSIPATION (W) 350 D.C. 300 θ =180° θ =180° 120° 120° 90° 250 200 90° 60° 60° 150 30° 30° 100 I TSM 50 0.02s 0 0 50 100 150 200 250 300 350 AVERAGE ON-STATE CURRENT (A) 0° 180° θ CONDUCTION ANGLE AVERAGE ON-STATE CURRENT VS. CASE TEMPERATURE (50Hz SINUSOIDAL CURRENT WAVEFORM) θ=180° 200 AVERAGE ON-STATE CURRENT (A) PDT/PDH2018 120° 160 90° 120 60° 80 30° 40 0 0 25 50 75 CASE TEMPERATURE (°C) 100 125 0° 180° θ CONDUCTION ANGLE AVERAGE ON-STATE CURRENT VS. CASE TEMPERATURE (50Hz RECTANGULAR CURRENT WAVEFORM) 350 PDT/PDH2018 D.C. AVERAGE ON-STATE CURRENT (A) 300 250 θ=180° 200 120° 90° 150 60° 100 30° 50 0 0 25 50 75 CASE TEMPERATURE (°C) 100 125 -40 C 25 C 12 5C P GM =5W f >50Hz duty< 20% SURGE CURRENT RATINGS f=50Hz,Harf Sine Wave,Non-Repetitive,Tj=125℃ PDT/PDH2018 4500 4000 3500 SURGE ON-STATE CURRENT (A) 3000 2500 2000 1500 1000 500 I TSM 0.02s 0 0.02 0.05 0.1 0.2 TIME (s) 0.5 1 2