PANJIT PJSD05LFN2

PJSD05LFN2
ESD PROTECTION DIODES
FEATURES
0.042(1.05)
0.037(0.95)
• IEC61000-4-2 Level 4 ESD Protection
0.026(0.65)
0.021(0.55)
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
0.022(0.55)
0.017(0.45)
• Case: DFN 2L, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
•
Polarity : see cathode band
0.002(0.05)MAX.
0.022(0.55)
0.047(0.45)
0.013(0.32)
0.008(0.22)
1
Cathode
2
Anode
PIN NO.1
IDENTIFICATION
MAXIMUM RATINGS
Rating
Symbol
Value
Units
To ta l P o we r D i s s i p a t i o n o n F R-4 B o a rd
( No te 1 )@ T A = 2 5 o C
PD
250
mW
P e a k P o we r D i s s i p a ti o n 8 /2 0 S ur g e P uls e
P PM
40
W
The r ma l Re s i s ta nc e J unc t i o n t o A mb i e nt
R θJ A
500
TL
260
o
C
T J , T S TG
-55 to +150
o
C
L e a d S o ld e r Te m p e ra t ure - Ma xi m um
( 1 0 S e c o nd D ur a ti o n)
O p e r a ti ng J unc t i o n a nd S t o ra g e Te m p e ra t ure Ra ng e
o
C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Rating are stress ratings only. Functional
operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Note : 1.FR-4 = 70 x 60 x 1mm.
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
November 29,2010-REV.00
PAGE . 1
PJSD05LFN2
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Parameter
Symbol
Maximum Reverse Peak Pulse Current
I PP
Clamping [email protected] PP
VC
Working Peak Reverse Voltage
VRWM
Maximum Reverse Leakage [email protected]
IR
Breakdown Voltage @ I T
VBR
Test Current
IT
Forward Current
IF
Forward [email protected] F
VF
Maximum Peak Power Dissipation
PPM
[email protected] R=0 and f=1MHz
C
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Part Number
PJSD05LFN2
V RWM
I R @V RWM
V [email protected] T
(Note 2)
C
(Note 3)
VC
Ma x.
Ma x.
Mi n.
M a x.
Ma x P e r
8 /2 0 μ s
V
μA
V
pF
V
A
mA
5
1
6.2
35
9.8
4
1.0
I
PP
IT
Marking
BC
Note : 2.VBR is measured with a pulse test current IT at an ambient temperature of 25oC
3.Capacitance at f=1MHz, VR=0V, TA=25oC
November 29,2010-REV.00
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PJSD05LFN2
110
100
Percent of Ipp
80
70
50% of Ipp @20 m s
60
50
40
30
20
Rise time 10-90% - 8m s
10
0
0
10
15
20
25
10
V C, Clamping Voltage (V)
90
8
6
4
2
0
30
0
1
time , m sec
3
4
5
Fig.2 Typical Peak Clamping Voltage
40
60
I R, Leakage Current (nA)
C J ,Junction Capacitance (pF)
Fig.1 8/20µs Peak Pulse Current Waveform
30
20
10
0
0
1
2
3
4
T J = 25 C
50
40
30
20
10
0
5
0
1
V R ,Reverse Bias Voltage (V)
3
4
5
Fig.4 Typical Reverse Characteristics
300
TJ =150 C
100
TJ =125 C
TJ =25 C
10
TJ =75 C
0. 6
0. 8
1
V F, Forward Voltage (V)
Fig.5 Typical Forward Characteristics
November 29,2010-REV.00
1. 2
P D, Steady-State Power
Dissipation(mW)
1000
1
0. 4
2
V R, Reverse Voltage (V)
Fig.3 Typical Junction Capacitance
I F, Forward Current (mA)
2
I PP,8/20 m s Peak Pulse Current (A)
250
200
150
100
50
0
0
25
50
75
100
125
150
T A, Ambient Temperature (°C)
Fig.6 Power Derating Curve
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PJSD05LFN2
MOUNTING PAD LAYOUT
DFN 2L
0.043
(1.10)
0.010
(0.26)
0.028
(0.70)
0.017
(0.42)
0.027
(0.68)
ORDER INFORMATION
• Packing information
T/R - 8K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein are
subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for
any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any
license under its patent rights or rights of others.
November 29,2010-REV.00
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