SAVANTIC 2SC2838

SavantIC Semiconductor
Product Specification
2SC2838
Silicon NPN Power Transistors
DESCRIPTION
·With MT-200 package
·Fast switching speed
·Wide area of safe operation
APPLICATIONS
·For high frequency power amplifiers, audio
power amplifiers,switching regulators and
DC-DC converters application
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings (Ta=25°C)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
150
V
VCEO
Collector-emitter voltage
Open base
150
V
VEBO
Emitter-base voltage
Open collector
5
V
12
A
120
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SC2838
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA; IB=0
150
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA; IE=0
150
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
5
V
Collector-emitter saturation voltage
IC=5 A; IB=0.5 A
1.8
V
ICBO
Collector cut-off current
VCB=140V; IE=0
50
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
50
µA
hFE
DC current gain
IC=3A ; VCE=4V
Transition frequency
IC=1A ; VCE=10V
VCEsat
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
60
70
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SC2838