SAVANTIC 2SC2827

SavantIC Semiconductor
Product Specification
2SC2827
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·High breakdown voltage
·Fast switching speed.
·Wide area of safe operation
APPLICATIONS
·400V/7A switching regulator applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
450
V
VEBO
Emitter-base voltage
Open collector
6
V
6
A
50
W
IC
Collector current
PC
Collector dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SC2827
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ; IB=0
450
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ; IC=0
6
V
VCE(sat)
Collector-emitter saturation voltage
IC=4A; IB=0.8A
1.0
V
VBE(sat)
Base-emitter saturation voltage
IC=4A; IB=0.8A
1.5
V
ICBO
Collector cut-off current
VCB=500V ;IE=0
100
µA
ICEO
Collector cut-off current
VCE=450V ; IB=0
100
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
µA
hFE-2
DC current gain
IC=3A ; VCE=2V
Transition frequency
IC=0.5A ; VCE=10V
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
10
20
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
2SC2827