SECOS 2SC3279_11

2SC3279
2A , 30V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of ā€œ-Cā€ specifies halogen & lead-free
TO-92
FEATURES
High DC current gain and excellent hFE linearity.
Low saturation voltage.
G
H
1Emitter
2Collector
3Base
J
CLASSIFICATION OF hFE
A
Product-Rank 2SC3279-L 2SC3279-M 2SC3279-N
D
2SC3279-P
B
Range
140~240
200~330
300~450
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
2.42
2.66
0.36
0.76
REF.
A
B
C
D
E
F
G
H
J
K
420~600
K
E
C
F
Collector
2
3
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Symbol
Rating
Unit
Collector to Base Voltage
Parameter
VCBO
30
V
Collector to Emitter Voltage
VCEO
10
V
Emitter to Base Voltage
VEBO
6
V
Collector Current - Continuous
IC
2
A
Collector Power Dissipation
PC
0.75
W
TJ, TSTG
150, -55~150
°C
Junction, Storage Temperature
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Collector to Base Breakdown Voltage
V(BR)CBO
30
-
-
V
IC=1mA, IE=0
Collector to Emitter Breakdown Voltage
V(BR)CEO
10
-
-
V
IC=10mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
6
-
-
V
IE=1mA, IC=0
Collector Cut ā€“ Off Current
ICBO
-
-
0.1
µA
VCB=30V, IE=0
Emitter Cut ā€“ Off Current
IEBO
-
-
0.1
µA
VEB=6V, IC=0
DC Current Gain
hFE
140
-
600
VCE(sat)
-
-
0.82
V
IC=2A, IB=100mA
Base to Emitter voltage
VBE
-
-
1.5
V
VCE=1V, IC=2A
Collector Output Capacitance
Cob
-
27
-
pF
fT
-
150
-
MHz
Collector to Emitter Saturation Voltage
Transition Frequency
http://www.SeCoSGmbH.com/
18-Feb-2011 Rev. B
VCE=1V, IC=500mA
VCB=10V, IE=0, f=1MHz
VCE=1V, IC=0.5A
Any changes of specification will not be informed individually.
Page 1 of 2
2SC3279
Elektronische Bauelemente
2A , 30V
NPN Plastic Encapsulated Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
18-Feb-2011 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 2