SECOS 2SD2114

2SD2114
0.5A , 25V
NPN Plastic-Encapsulate Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of ā€œ-Cā€ specifies halogen & lead-free
SOT-23
FEATURE
High DC Current Gain.
High Emitter-Base Voltage. VEBO=12V (Min.)
A
L
3
3
C B
Top View
CLASSIFICATION OF hFE
1
1
Product-Rank
2SD2114-V
2SD2114-W
Range
820~1800
1200~2700
Marking
BBV
BBW
K
2
E
2
D
F
PACKAGE INFORMATION
REF.
Package
MPQ
LeaderSize
SOT-23
3K
7ā€™ inch
H
G
A
B
C
D
E
F
Millimeter
Min.
Max.
2.80
3.04
2.10
2.55
1.20
1.40
0.89
1.15
1.78
2.04
0.30
0.50
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.09
0.18
0.45
0.60
0.08
0.177
0.6 REF.
0.89
1.02
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
Ratings
Unit
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
25
20
12
500
250
150, -55~150
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
On Resistance
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
R(on)
25
20
12
820
-
350
8
0.8
0.5
0.5
2700
0.4
-
V
V
V
µA
µA
http://www.SeCoSGmbH.com/
24-Feb-2011 Rev. B
V
MHz
pF
ā„¦
Test Conditions
IC=10µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=20V, IE=0
VEB=10V, IC=0
VCE=3V, IC=10mA
IC=500mA, IB=20mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0, f=1MHz
Vin=0.1V(rms), IB=1mA, f=1KHz
Any changes of specification will not be informed individually.
Page 1 of 3
2SD2114
Elektronische Bauelemente
0.5A , 25V
NPN Plastic-Encapsulate Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
24-Feb-2011 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 3
2SD2114
Elektronische Bauelemente
0.5A , 25V
NPN Plastic-Encapsulate Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
24-Feb-2011 Rev. B
Any changes of specification will not be informed individually.
Page 3 of 3