SECOS 2SD596

2SD596
0.7A , 30V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
High DC Current gain
Complementary to 2SB624
A
L
3
3
C B
Top View
MARKING
1
1
2
K
DV4
E
2
D
PACKAGE INFORMATION
F
Package
MPQ
Leader Size
SOT-23
3K
7 inch
H
G
Millimeter
Min.
Max.
2.80
3.04
2.10
2.55
1.20
1.40
0.89
1.15
1.78
2.04
0.30
0.50
REF.
A
B
C
D
E
F
J
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.09
0.18
0.45
0.60
0.08
0.177
0.6 REF.
0.89
1.02
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
Rating
Unit
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
30
25
5
700
200
150, -55~150
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
1
Collector to Emitter Saturation Voltage
1
Base to Emitter Saturation Voltage
Transition Frequency
Collector output capacitance
1
Symbol
Min.
Typ.
Max.
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE (1)
hFE (2)
VCE(sat)
VBE
fT
Cob
30
25
5
200
50
0.6
170
-
12
0.1
0.1
320
0.6
0.7
-
V
V
V
µA
µA
V
V
MHz
pF
Test Condition
IC=100µA, IE=0
IC=1mA, IB=0
IE=100µA, IC=0
VCB=30V, IE=0
VEB=5V, IC=0
VCE=1V, IC=100mA
VCE=1V, IC=700mA
IC=700mA, IB=70mA
VCE=6V, IC=10mA
VCE=6V, IC=10mA
VCB=6V, IE=0, f=10MHZ
Note:
1. Pulse width≦350µs, Duty Cycle≦2%.
http://www.SeCoSGmbH.com/
15-Jul-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 3
2SD596
Elektronische Bauelemente
0.7A , 30V
NPN Plastic Encapsulated Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
15-Jul-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 3
2SD596
Elektronische Bauelemente
0.7A , 30V
NPN Plastic Encapsulated Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
15-Jul-2011 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 3