3DD13003B 1.5A , 700V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 Power switching applications A D REF. B A B C D E F G H J K Collector 2 E C G H F 3 Base 1 Emitter J Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 1Emitter 2Collector 3Base ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol Rating Unit VCBO VCEO VEBO IC PC TJ, TSTG 700 400 9 1.5 900 150, -55~150 V V V A mW °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut – Off Current Emitter Cut – Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency Storage time Fall time http://www.SeCoSGmbH.com/ 15-Jun-2011 Rev. A Symbol Min. Typ. Max. Unit V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat)1 VCE(sat)2 VBE(sat) fT tS tF 700 400 9 - - V V V 20 4 - - 100 50 10 30 3 0.8 1 4 0.7 µA µA V V MHz µs µs Test Condition IC=1mA, IE=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=700V, IE=0 VCE=400V, IB=0 VEB=7V, IC=0 VCE=10V, IC=400mA IC=1.5A, IB=500mA IC=0.5A, IB=100mA IC=0.5A, IB=100mA VCE=10V, IC=100mA, f =1MHz IB1= -IB2=0.2A IC=1A Any changes of specification will not be informed individually. Page 1 of 2 3DD13003B Elektronische Bauelemente 1.5A , 700V NPN Plastic-Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 15-Jun-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 2