SECOS SCS914DSTL

SCS914DSTL
0.3A , 100V
Plastic-Encapsulated Switching Diode
Elektronische Bauelemente
RoHS Compliant Product
A suffix of ā€œ-Cā€ specifies halogen & lead-free
WBFBP-03D
DESCRIPTION
Epitaxial planar Silicon diode
D
L C
FEATURES
E
Fast Switching Speed
Ultra-Small Surface Mount Package
For General Purpose Switching Applications
High Conductance
D
H
B
F
APPLICATIONS
K
A
High Conductance Ultra Fast Diode
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
Millimeter
Min.
Max.
0.950
1.050
0.950
1.050
0.010
0.070
0.210
0.310
0.350 REF.
0.680 REF.
REF.
A
B
C
D
E
F
MARKING
G
J
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.050
0.510
0.610
0.250
0.350
0.050
0.450
0.550
5D
TOP VIEW
PACKAGE INFORMATION
Package
MPQ
Leader Size
WBFBP-03D
5K
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameters
Symbol
Rating
Unit
Peak Repetitive Reverse Voltage
VRRM
100
V
Working Peak Reverse Voltage
VRWM
100
V
DC Blocking Voltage
VR
100
V
Non-Repetitive Peak reverse voltage
VRM
100
V
VR(RMS)
53
V
Forward Continuous Current
IFM
500
mA
Average Rectified Output Current
IO
300
mA
Power Dissipation
PD
100
mW
TJ,TSTG
125, -55~150
°C
RMS Reverse Voltage
Operating Junction and Storage Temperature
http://www.SeCoSGmbH.com/
21-Jul-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2
SCS914DSTL
0.3A , 100V
Plastic-Encapsulated Switching Diode
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameters
Symbol
Min.
Max.
Unit
VF1
-
0.715
V
IF=1mA
VF2
-
0.855
V
IF=10mA
VF3
-
1
V
IF=50mA
VF4
-
1.25
V
IF=150mA
Maximum DC Reverse Current at rated
DC blocking voltage
IR1
-
1
µA
VR=75V
25
nA
VR=20V
Capacitance between terminals
CT
-
2
pF
VR=0, f=1MHz
Maximum Reverse Recovery Time
TRR
-
4
nS
IF=IR=10mA, Irr=0.1XIR
Forward Voltage
IR2
Test Conditions
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
21-Jul-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2