SEME-LAB SML300HB06

SML300HB06
Attributes:
-aerospace build standard
-high reliability
-lightweight
-metal matrix base plate
-AlN isolation
-trench gate igbts
Maximum rated values/ Electrical Properties
Collector-emitter Voltage
Vce
600
V
DC Collector Current
Tc=70C, Tvj=175C
Tc=25C,Tvj=175C
Ic, nom
Ic
300
400
A
Repetitive peak Collector Current
tp=1msec,Tc=80C
Icrm
600
A
Total Power Dissipation
Tc=25C
Ptot
1250
W
Vges
+/-20
V
If
300
A
Gate-emitter peak voltage
DC Forward Diode
Current
Repetitive Peak
Forward Current
tp=1msec
Ifrm
600
A
I2t value per diode
Vr=0V, tp=10msec,
Tvj=125C
Tvj=150C
I2t
8400
7900
A2sec
RMS, 50Hz, t=1min
Visol
2500
V
Isolation voltage
1.45
1.6
1.7
1.9
V
5.8
6.5
V
Collector-emitter saturation
voltage
Ic=300A,Vge=15V, Tc=25C
Ic=300A,Vge=15V,Tc=125C
Ic=300A,Vge=15V,Tc=150C
Vce(sat)
Gate Threshold voltage
Ic=4.8mA,Vce=Vge, Tvj=25C
Vge(th)
Input capacitance
f=1MHz,Tvj=25C,Vce=25V,
Vge=0V
Cies
19
nF
Reverse transfer Capacitance
f=1MHz,Tvj=25C,Vce=25V,
Vge=0V
Cres
0.57
nF
Collector emitter cut off
current
Vce=600V,Vge=0V,Tvj=25C
Vce=600V,Vge=0V,Tvj=125C
Ices
1
1
Gate emitter cut off current
Vce=0V,Vge=20V,Tvj=25C
Iges
4.9
5
mA
mA
400
nA
Turn on delay time
Ic=300A, Vcc=300V
Vge=+/15V,Rg=2.4Ω,Tvj=25C
Vge=+/-15V,Rg=2.4Ω,Tvj=125C
Vge=+/-15V,Rg=2.4Ω,Tvj=150C
td,on
110
120
130
nsec
nsec
nsec
tr
50
60
60
nsec
nsec
nsec
td,off
490
520
530
nsec
nsec
nsec
tf
50
70
70
nsec
nsec
nsec
Turn on energy loss per pulse Ic=300A,Vce=300V,Vge=+/-15V
Rge=2.4Ω,L=30nH
Tvj=125C
di/dt=6500A/µsec
Tvj=150C
Eon
3.1
3.3
mJ
mJ
Turn off energy loss per pulse Ic=300A,Vce=300V,Vge=+/-15V
Rge=2.4Ω,L=30nH
Tvj=125C
di/dt=6500A/µsec
Tvj=150C
Eoff
15
15.5
mJ
mJ
Isc
2100
1500
A
A
Stray Module inductance
Lσce
40
nH
Terminal-chip resistance
Rc
1.2
mΩ
Rise time
Turn off delay time
Fall time
SC Data
Ic=300A, Vcc=300V
Vge=+/-15V,Rg=2.4Ω,Tvj=25C
Vge=+/-15V,Rg=2.4Ω,Tvj=125C
Vge=+/-15V,Rg=2.4Ω,Tvj=150C
Ic=300A, Vcc=300V
Vge=+/-15V,Rg=2.4Ω,Tvj=25C
Vge=+/-15V,Rg=2.4Ω,Tvj=125C
Vge=+/-15V,Rg=2.4Ω,Tvj=150C
Ic=300A, Vcc=300V
Vge=+/-15V,Rg=2.4Ω,Tvj=25C
Vge=+/-15V,Rg=2.4Ω,Tvj=125C
Vge=+/-15V,Rg=2.4Ω,Tvj=150C
tp≤10µsec, Vge≤15V Vcc=360V,
Tvj=25C
Vce(max)=Vces-Lσdi/dt Tvj=150C
Diode characteristics
Forward voltage
Ic=300A,Vge=0V, Tc=25C
Ic=300A,Vge=0V, Tc=125C
Ic=300A,Vge=0V, Tc=150C
Peak reverse recovery current If=300A, -di/dt=6500A/µsec
Vce=300V,Vge=-15V,Tvj=25C
Vce=300V,Vge=-15V,Tvj=125C
Vce=300V,Vge=-15V,Tvj=150C
Recovered charge
Reverse recovery energy
If=300A, -di/dt=6500A/µsec
Vce=300V,Vge=-15V,Tvj=25C
Vce=300V,Vge=-15V,Tvj=125C
Vce=300V,Vge=-15V,Tvj=150C
If=300A, -di/dt=6500A/µsec
Vce=300V,Vge=-15V,Tvj=25C
Vce=300V,Vge=-15V,Tvj=125C
Vce=300V,Vge=-15V,Tvj=150C
Vf
1.55 1.95
1.5
1.45
V
V
V
Irm
190
235
250
A
A
A
Qr
13
24
28
µC
µC
µC
Erec
3.4
6.2
7.0
mJ
mJ
mJ
Thermal Properties
Thermal resistance junction to
case
Thermal resistance case to
heatsink
Min
Igbt
Diode
Typ
RθJ-C
0.12
0.16
RθC-hs
Maximum junction temperature
Tvj
Maximum operating temperature
Top
Storage Temperature
Tstg
Max
0.03
K/W
K/W
175
C
-55
175
C
-55
175
C
CIRCUIT DIAGRAM