ST 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the PNP transistor ST 2N2907 and ST 2N2907A are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Value Symbol Unit ST 2N2222 ST 2N2222A Collector Base Voltage VCBO 60 75 V Collector Emitter Voltage VCEO 30 40 V Emitter Base Voltage VEBO 5 6 V Collector Current IC 600 mA Power Dissipation Ptot 625 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 05/10/2005 ST 2N2222 / 2N2222A Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit at IC=0.1mA, VCE=10V hFE 35 - - - at IC=1mA, VCE=10V hFE 50 - - - at IC=10mA, VCE=10V hFE 75 - - - at IC=150mA, VCE=10V hFE 100 - 300 - ST 2N2222 hFE 30 - - - ST 2N2222A hFE 40 - - - at VCB=50V ST 2N2222 ICBO - - 0.01 µA at VCB=60V ST 2N2222A ICBO - - 0.01 µA ST 2N2222 V(BR)CBO 60 - - V ST 2N2222A V(BR)CBO 75 - - V ST 2N2222 V(BR)CEO 30 - - V ST 2N2222A V(BR)CEO 40 - - V ST 2N2222 V(BR)EBO 5 - - V ST 2N2222A V(BR)EBO 6 - - V ST 2N2222 VCE(sat) - - 0.4 V ST 2N2222A VCE(sat) - - 0.3 V ST 2N2222 VCE(sat) - - 1.6 V ST 2N2222A VCE(sat) - - 1 V ST 2N2222 VBE(sat) - - 1.3 V ST 2N2222A VBE(sat) 0.6 - 1.2 V ST 2N2222 VBE(sat) - - 2.6 V ST 2N2222A VBE(sat) - - 2.0 V fT 250 - - MHz Cob - - 8 pF Cib - - 30 pF DC Current Gain at IC=500mA, VCE=10V Collector Cutoff Current Collector Base Breakdown Voltage at IC=10µA Collector Emitter Breakdown Voltage at IC=10mA Emitter Base Breakdown Voltage at IE=10µA Collector Saturation Voltage at IC=150mA, IB=15mA at IC=500mA, IB=50mA Base Saturation Voltage at IC=150mA, IB=15mA at IC=500mA, IB=50mA Gain Bandwidth Product at IC=20mA, VCE=20V, f=100MHz Collector Output Capacitance at VCB=10V, f=1MHz Input Capacitance at VCB=0.5V, f=1MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 05/10/2005 ST 2N2222 / 2N2222A Figure 1. DC Current Gain 1000 h FE , DC CURRENT GAIN 700 500 o TJ=125 C 300 200 25o C 100 70 50 -55o C 30 VCE=1.0V VCE=10V 20 10 0.2 0.1 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1.0 K I C, COLLECTOR CURENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. Collector Saturetion Region 1.0 TJ= 25o C 0.8 0.6 10mA I C=1.0mA 500mA 150mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 I B, BASE CURENT (mA) SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 05/10/2005 Figure 3. Capacitances 30 20 Ceb 10 7.0 5.0 Ccb 3.0 2.0 0.1 0.2 0.3 0.5 0.71.0 2.0 3.0 5.0 7.0 10 20 30 50 f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) ST 2N2222 / 2N2222A Figure 4. Current-Gain Bandwidth Product 500 VCE=20V TJ = 25o C 300 200 100 70 50 1.0 REVERSE VOLTAGE (VOLTS) 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C, COLLECTOR CURRENT (mA) SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 05/10/2005