SILABS SI4112-D-GT

Si4133
Si4123/22/13/12
D U A L - B A N D R F S Y N T H E S I Z E R W I T H I N TE G R A T E D V C O S
F OR W I R E L E S S C O M M U N I C A T I O N S
FEATURES
Dual-band RF synthesizers
RF1:
900 MHz to 1.8 GHz
RF2: 750 MHz to 1.5 GHz

Integrated VCOs, loop filters, 
varactors, and resonators
Minimal (2) number of external
components required
Lead-free
Ordering Information:
and RoHS compliant
See page 31.
Applications
Description
The Si4133 is a monolithic integrated circuit that performs both IF and dualband RF synthesis for wireless communications applications. The Si4133
includes three VCOs, loop filters, reference and VCO dividers, and phase
detectors. Divider and powerdown settings are programmable with a threewire serial interface.
Functional Block Diagram
SDATA
SCLK
SEN
AUXOUT
Serial
Interface
2
23
VDDI
GNDR
3
22
IFOUT
RFLD
4
21
GNDI
RFLC
5
20
IFLB
GNDR
6
19
IFLA
RFLB
7
18
GNDD
RFLA
8
17
VDDD
GNDR
9
16
GNDD
GNDR
10
15
XIN
RFOUT
11
14
PWDN
VDDR
12
13
AUXOUT
Si4133-GM
N
R
RFLC
RFLD
RF2
N
R
Phase
Detector
IFDIV
IFOUT
IF
N
28 27 26 25 24 23 22
RFOUT
Phase
Detector
IFLA
IFLB
GNDI
RFLB
RF1
IFOUT
RFLA
Phase
Detector
22-bit
Data
Register
Test
Mux
SDATA
GNDR
1
21
GNDI
RFLD
2
20
IFLB
RFLC
3
19
IFLA
GNDR
4
18
GNDD
RFLB
5
17
VDDD
RFLA
6
16
GNDD
GNDR
7
15
XIN
GND
Pad
8
9
10 11 12 13 14
GNDD
PWDN
Powerdown
Control
R
SEN
PWDN
Reference
Amplifier
24
VDDI
XIN
1
AUXOUT

SCLK
SCLK

Si4133-GT
SEN

Dual-band communications
Digital cellular telephones GSM 850, E-GSM 900, DCS 1800,
PCS 1900
Digital cordless phones
Analog cordless phones
Wireless local loop
VDDR

GNDR

Pin Assignments
SDATA

62.5 to 1000 MHz
Low phase noise
Programmable powerdown modes
1 µA standby current
18 mA typical supply current
2.7 to 3.6 V operation
Packages: 24-pin TSSOP,
28-lead QFN
RFOUT



IF synthesizer
IF:

GNDR


GNDR

Patents pending
Rev. 1.61 1/10
Copyright © 2010 by Silicon Laboratories
Si4133
Si4133
2
Rev. 1.61
Si4133
TABLE O F C ONTENTS
Section
Page
1. Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
2. Typical Application Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3. Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.1. Serial Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.2. Setting the VCO Center Frequencies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.3. Extended Frequency Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.4. Self-Tuning Algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.5. Output Frequencies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.6. PLL Loop Dynamics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.7. RF and IF Outputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.8. Reference Frequency Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.9. Powerdown Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.10. Auxiliary Output (AUXOUT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4. Control Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
5. Pin Descriptions: Si4133-GT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
6. Pin Descriptions: Si4133-GM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
7. Ordering Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
8. Si4133 Derivative Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .31
9. Package Outline: Si4133-GT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
10. Package Outline: Si4133-GM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Document Change List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34
Contact Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36
Rev. 1.61
3
Si4133
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Ambient Temperature
TA
–40
25
85
°C
Supply Voltage
VDD
2.7
3.0
3.6
V
Supply Voltages Difference
V
–0.3
—
0.3
V
(VDDR – VDDD),
(VDDI – VDDD)
Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at nominal supply voltages and an operating temperature of 25 °C unless otherwise stated.
Table 2. Absolute Maximum Ratings1,2
Parameter
Symbol
Value
Unit
VDD
–0.5 to 4.0
V
Input Current3
IIN
±10
mA
Input Voltage3
VIN
–0.3 to VDD+0.3
V
TSTG
–55 to 150
oC
DC Supply Voltage
Storage Temperature Range
Notes:
1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. This device is a high performance RF integrated circuit with an ESD rating of < 2 kV. Handling and assembly of
this device should only be done at ESD-protected workstations.
3. For signals SCLK, SDATA, SEN, PWDN and XIN.
4
Rev. 1.61
Si4133
Table 3. DC Characteristics
(VDD = 2.7 to 3.6 V, TA = –40 to 85 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
RF1 and IF operating
—
18
27
mA
RF1 Mode Supply Current1
—
10
16
mA
RF2 Mode Supply Current1
—
9
16
mA
IF Mode Supply Current1
—
8
13
mA
—
1
—
µA
1
Total Supply Current
Standby Current
PWDN = 0
High Level Input Voltage2
VIH
0.7 VDD
—
—
V
Low Level Input Voltage2
VIL
—
—
0.3 VDD
V
High Level Input Current2
IIH
VIH = 3.6 V,
VDD = 3.6 V
–10
—
10
µA
Low Level Input Current2
IIL
VIL = 0 V,
VDD= 3.6 V
–10
—
10
µA
High Level Output Voltage3
VOH
IOH = –500 µA
VDD–0.4
—
—
V
Low Level Output Voltage3
VOL
IOH = 500 µA
—
—
0.4
V
Notes:
1. RF1 = 1.6 GHz, RF2 = 1.1 GHz, IFOUT = 550 MHz, LPWR = 0.
2. For signals SCLK, SDATA, SEN, and PWDN.
3. For signal AUXOUT.
Rev. 1.61
5
Si4133
Table 4. Serial Interface Timing
(VDD = 2.7 to 3.6 V, TA = –40 to 85 °C)
Symbol
Test Condition
Min
Typ
Max
Unit
SCLK Cycle Time
tclk
Figure 1
40
—
—
ns
SCLK Rise Time
tr
Figure 1
—
—
50
ns
SCLK Fall Time
tf
Figure 1
—
—
50
ns
SCLK High Time
th
Figure 1
10
—
—
ns
SCLK Low Time
tl
Figure 1
10
—
—
ns
SDATA Setup Time to SCLK2
tsu
Figure 2
5
—
—
ns
SDATA Hold Time from SCLK2
Parameter1
thold
Figure 2
0
—
—
ns
2
SEN to SCLKDelay Time
ten1
Figure 2
10
—
—
ns
SCLK to SENDelay Time2
ten2
Figure 2
12
—
—
ns
SEN to SCLKDelay Time2
ten3
Figure 2
12
—
—
ns
tw
Figure 2
10
—
—
ns
SEN Pulse Width
Notes:
1. All timing is referenced to the 50% level of the waveforms unless otherwise noted.
2. Timing is not referenced to 50% level of the waveform. See Figure 2.
tr
tf
80%
S CLK
50%
20%
th
t clk
tl
Figure 1. SCLK Timing Diagram
6
Rev. 1.61
Si4133
ts u
t hold
S CLK
S DA TA
D17
D16
D15
A1
A0
t en3
ten1
ten2
S E NB
tw
Figure 2. Serial Interface Timing Diagram
First bit
c loc ked in
Last bit
clocked in
D D D D D D D D D
17 16 15 14 13 12 11 10 9
D
8
D
7
D
6
D
5
D
4
D
3
D
2
D
1
data
field
D
0
A
3
A
2
A
1
A
0
address
field
Figure 3. Serial Word Format
Rev. 1.61
7
Si4133
Table 5. RF and IF Synthesizer Characteristics
(VDD = 2.7 to 3.6 V, TA = –40 to 85 °C)
Parameter1
Symbol
Test Condition
Min
Typ
Max
Unit
XIN Input Frequency
fREF
2
—
26
MHz
Reference Amplifier Sensitivity
VREF
0.5
—
VDD
+0.3 V
VPP
0.010
—
1.0
MHz
947
—
1720
MHz
1850
—
2050
MHz
789
—
1429
MHz
–5
—
5
%
526
—
952
MHz
with IFDIV
62.5
—
1000
MHz
Note: LEXT ±10%
–5
—
5
%
Open loop
—
500
—
kHz/V
RF2 VCO Pushing
—
400
—
kHz/V
IF VCO Pushing
—
300
—
kHz/V
—
400
—
kHzPP
—
300
—
kHzPP
—
100
—
kHzPP
1 MHz offset
—
–132
—
dBc/Hz
10 Hz to 100 kHz
—
0.9
—
degrees
rms
1 MHz offset
—
–134
—
dBc/Hz
10 Hz to 100 kHz
—
0.7
—
degrees
rms
100 kHz offset
—
–117
—
dBc/Hz
100 Hz to 100 kHz
—
0.4
—
degrees
rms
Phase Detector Update Frequency
f
RF1 VCO Center Frequency Range
fCEN
RF1 VCO Tuning Range2
RF2 VCO Center Frequency Range
Extended frequency
operation
fCEN
RF Tuning Range from fCEN
IF VCO Center Frequency Range
IFOUT Tuning Range
IFOUT Tuning Range from fCEN
RF1 VCO Pushing
RF1 VCO Pulling
RF2 VCO Pulling
f= fREF/R
Note: LEXT ±10%
fCEN
VSWR = 2:1, all
phases, open loop
IF VCO Pulling
RF1 Phase Noise
RF1 Integrated Phase Error
RF2 Phase Noise
RF2 Integrated Phase Error
IF Phase Noise
IF Integrated Phase Error
Notes:
1. f = 200 kHz, RF1 = 1.6 GHz, RF2 = 1.2 GHz, IFOUT = 550 MHz, LPWR = 0, for all parameters unless otherwise noted.
2. Extended frequency operation only. VDD  3.0 V, QFN only, VCO Tuning Range fixed by directly shorting the RFLA and
RFLB pins. See Application Note 41 for more details on the Si4133 extended frequency operation.
3. From powerup request (PWDN or SEN during a write of 1 to bits PDIB and PDRB in Register 2) to RF and IF
synthesizers ready (settled to within 0.1 ppm frequency error).
4. From powerdown request (PWDN, or SENduring a write of 0 to bits PDIB and PDRB in Register 2) to supply current
equal to IPWDN.
8
Rev. 1.61
Si4133
Table 5. RF and IF Synthesizer Characteristics (Continued)
(VDD = 2.7 to 3.6 V, TA = –40 to 85 °C)
Symbol
Test Condition
Min
Typ
Max
Unit
Second Harmonic
—
–26
–20
dBc
RF2 Harmonic Suppression
—
–26
–20
dBc
IF Harmonic Suppression
—
–26
–20
dBc
ZL = 50
–8
–3
1
dBm
ZL = 50RF1 active,
Extended frequency
operation
–14
–7
1
dBm
ZL = 50 
–8
–4
0
dBm
Offset = 200 kHz
—
–65
—
dBc
Offset = 400 kHz
—
–71
—
dBc
Offset = 600 kHz
—
–75
—
dBc
Offset = 200 kHz
—
–65
—
dBc
Offset = 400 kHz
—
–71
—
dBc
Offset = 600 kHz
—
–75
—
dBc
Parameter1
RF1 Harmonic Suppression
RFOUT Power Level
RFOUT Power
Level2
IFOUT Power Level
RF1 Output Reference Spurs
RF2 Output Reference Spurs
3
tpup
Figures 4, 5
—
40/f
50/f
Powerdown Request to Synthesizer Off4
Time
tpdn
Figures 4, 5
—
—
100
Powerup Request to Synthesizer Ready
Time
ns
Notes:
1. f = 200 kHz, RF1 = 1.6 GHz, RF2 = 1.2 GHz, IFOUT = 550 MHz, LPWR = 0, for all parameters unless otherwise noted.
2. Extended frequency operation only. VDD  3.0 V, QFN only, VCO Tuning Range fixed by directly shorting the RFLA and
RFLB pins. See Application Note 41 for more details on the Si4133 extended frequency operation.
3. From powerup request (PWDN or SEN during a write of 1 to bits PDIB and PDRB in Register 2) to RF and IF
synthesizers ready (settled to within 0.1 ppm frequency error).
4. From powerdown request (PWDN, or SENduring a write of 0 to bits PDIB and PDRB in Register 2) to supply current
equal to IPWDN.
Rev. 1.61
9
Si4133
RF and IF synthesizers settled to
within 0.1 ppm frequency error.
tpup
IT
tpdn
IPWDN
SEN
SDATA
PDIB = 1
PDRB = 1
PDIB = 0
PDRB = 0
Figure 4. Software Power Management Timing Diagram
RF and IF synthesizers settled to
within 0.1 ppm frequency error.
IT
tpup
tpdn
IPWDN
PWDN
Figure 5. Hardware Power Management Timing Diagram
10
Rev. 1.61
Si4133
TRACE A: Ch1 FM Main Time
A Marker
1.424
kHz
174.04471
us
711.00
Hz
Real
160
Hz
/div
176
Hz
Start: 0 s
Stop: 399.6003996 us
Figure 6. Typical Transient Response RF1 at 1.6 GHz
with 200 kHz Phase Detector Update Frequency
Rev. 1.61
11
Si4133
−60
−70
Phase Noise (dBc/Hz)
−80
−90
−100
−110
−120
−130
−140
2
10
3
10
4
10
Offset Frequency (Hz)
5
10
Figure 7. Typical RF1 Phase Noise at 1.6 GHz
with 200 kHz Phase Detector Update Frequency
Figure 8. Typical RF1 Spurious Response at 1.6 GHz
with 200 kHz Phase Detector Update Frequency
12
Rev. 1.61
6
10
Si4133
−60
−70
Phase Noise (dBc/Hz)
−80
−90
−100
−110
−120
−130
−140
2
10
3
10
4
10
Offset Frequency (Hz)
5
10
6
10
Figure 9. Typical RF2 Phase Noise at 1.2 GHz
with 200 kHz Phase Detector Update Frequency
Figure 10. Typical RF2 Spurious Response at 1.2 GHz
with 200 kHz Phase Detector Update Frequency
Rev. 1.61
13
Si4133
−70
−80
Phase Noise (dBc/Hz)
−90
−100
−110
−120
−130
−140
−150
2
10
3
10
4
10
Offset Frequency (Hz)
5
10
Figure 11. Typical IF Phase Noise at 550 MHz
with 200 kHz Phase Detector Update Frequency
Figure 12. IF Spurious Response at 550 MHz
with 200 kHz Phase Detector Update Frequency
14
Rev. 1.61
6
10
Si4133
2. Typical Application Circuits
VDD
Si4133-GT
30  *
From
1
System
Controller
2
3
4
5
6
Printed Trace
Inductors
7
8
9
10
560 pF
2 nH
11
RFOUT
0.022 F VDD
SCLK
SEN
SDATA
VDDI
GNDR
IFOUT
RFLD
GNDI
RFLC
IFLB
GNDR
IFLA
RFLB
GNDD
RFLA
VDDD
GNDR
GNDD
GNDR
XIN
PWDN
RFOUT
12
AUXOUT
VDDR
24
0.022 F
23
40 nH
560 pF
22
IFOUT
21
Printed Trace
Inductor or
Chip Inductor
20
19
18
17
VDD
0.022 F
16
560 pF
15
External Clock
14
PWDN
13
AUXOUT
* Add 30  series resistance if using IF output divide values 2, 4, or 8.
Figure 13. Si4133-GT
VDD
30  *
From
0.022F
System
40 nH
560 pF
Controller
IFOUT
6
GND I
IFOU T
VDD I
SE N
SCLK
RFLC
IFLA
Si4133-GM
GNDR
GNDD
RFLB
VDDD
RFLA
GNDD
GNDR
GNDR
7
IFLB
8
9
10
11
12
XIN
13
Printed Trace
Inductor or
Chip Inductor
21
20
19
18
VDD
17
16
0.022 F
560 pF
15
External Clock
GNDD
5
22
PWDN
4
23
RFLD
AUXOUT
Printed Trace
Inductors
24
GNDI
VDDR
3
25
RFOUT
2
26
GNDR
GNDR
1
27
SDATA
GND R
28
14
VDD
0.022F
AUXOUT
PWDN
2 nH
560 pF
RFOUT
* Add 30  series resistance if using IF output divide values 2, 4, or 8.
Figure 14. Si4133-GM
Rev. 1.61
15
Si4133
3. Functional Description
The Si4133 is a monolithic integrated circuit that
performs IF and dual-band RF synthesis for wireless
communications applications. This integrated circuit
(IC), with minimal external components, completes the
frequency synthesis function necessary for RF
communications systems.
The Si4133 has three complete phase-locked loops
(PLLs) with integrated voltage-controlled oscillators
(VCOs). The low phase noise of the VCOs makes the
Si4133
suitable
for
demanding
wireless
communications applications. Phase detectors, loop
filters, and reference and output frequency dividers are
integrated. The IC is programmed with a three-wire
serial interface.
Two PLLs are provided for dual-band RF synthesis.
These RF PLLs are multiplexed so that only one PLL is
active at a time, as determined by the setting of an
internal register. The active PLL is the last one to be
written. The center frequency of the VCO in each PLL is
set by the value of an external inductance. Inaccuracies
in these inductances are compensated for by the selftuning algorithm. The algorithm is run after powerup or
after a change in the programmed output frequency.
Each RF PLL, when active, can adjust the RF output
frequency by ±5% of its VCO’s center frequency.
Because the two VCOs can be set to have widely
separated center frequencies, the RF output can be
programmed to service two widely separated frequency
bands by programming the corresponding N-Divider.
One RF VCO is optimized to have its center frequency
set between 947 MHz and 1.72 GHz, while the second
RF VCO is optimized to have its center frequency set
between 789 MHz and 1.429 GHz.
One PLL is provided for IF frequency synthesis. The
center frequency of this circuit’s VCO is set by the
connection of an external inductance. The PLL can
adjust the IF output frequency by ±5% of the VCO
center frequency. Inaccuracies in the value of the
external inductance are compensated for by the
Si4133’s proprietary self-tuning algorithm. This
algorithm is initiated each time the PLL is powered-up
(by either the PWDN pin or by software) and/or each
time a new output frequency is programmed.
The IF VCO can have its center frequency set as low as
526 MHz and as high as 952 MHz. An IF output divider
divides down the IF output frequencies, if needed. The
divider is programmable and is capable of dividing by 1,
2, 4, or 8.
16
The unique PLL architecture used in the Si4133
produces settling (lock) times that are comparable in
speed to fractional-N architectures without the high
phase noise or spurious modulation effects often
associated with those designs.
3.1. Serial Interface
A timing diagram for the serial interface is shown in
Figure 2 on page 7. Figure 3 on page 7 shows the
format of the serial word.
The Si4133 is programmed serially with 22-bit words
comprised of 18-bit data fields and 4-bit address fields.
When the serial interface is enabled (i.e., when SEN is
low) data and address bits on the SDATA pin are
clocked into an internal shift register on the rising edge
of SCLK. Data in the shift register is then transferred on
the rising edge of SEN into the internal data register
addressed in the address field. The serial interface is
disabled when SEN is high.
Table 12 on page 21 summarizes the data register
functions and addresses. The internal shift register
ignores leading bits before the 22 required bits.
3.2. Setting the VCO Center Frequencies
The PLLs can adjust the IF and RF output frequencies
±5% of the center frequencies of their VCOs. Each
center frequency is established by the value of an
external inductance connected to the respective VCO.
Manufacturing tolerances of ±10% for the external
inductances are acceptable. The Si4133 compensates
for inaccuracies in each inductance by executing a selftuning algorithm after PLL powerup or after a change in
the programmed output frequency.
Because the total tank inductance is in the low nH
range, the inductance of the package must be
considered when determining the correct external
inductance. The total inductance (LTOT) presented to
each VCO is the sum of the external inductance (LEXT)
and the package inductance (LPKG). Each VCO has a
nominal capacitance (CNOM) in parallel with the total
inductance, and the center frequency is as follows:
1
f CEN = ---------------------------------------------2 L TOT  C NOM
or
1
f CEN = -----------------------------------------------------------------------2  L PKG + L EXT   C NOM
Tables 6 and 7 summarize the characteristics of each
VCO.
Rev. 1.61
Si4133
the correct total inductance to the VCO. In
manufacturing, the external inductance can vary ±10%
of its nominal value and the Si4133 corrects for the
variation with the self-tuning algorithm.
Table 6. Si4133-GT VCO Characteristics
VCO fCEN Range CNOM LPKG LEXT Range
(MHz)
(pF) (nH)
(nH)
Min
Max
Min
Max
RF1
947
1720
4.3
2.0
0.0
4.6
RF2
789
1429
4.8
2.3
0.3
6.2
IF
526
952
6.5
2.1
2.2
12.0
For more information on designing the external trace
inductors, refer to Application Note 31: Inductor Design
for the Si41xx Synthesizer Family.
3.3. Extended Frequency Operation
The Si4133 may operate at an extended frequency
range of 1850 MHz to 2050 MHz by connecting the
RFLA and RFLB pins directly. For information on
configuring the Si4133 for extended frequency
operation, refer to Application Note 41: Extended
Frequency Operation of Silicon Laboratories Frequency
Synthesizers.
Table 7. Si4133-GM VCO Characteristics
VCO fCEN Range CNOM LPKG LEXT Range
(MHz)
(pF) (nH)
(nH)
Min
Max
Min
Max
RF1
947
1720
4.3
1.5
0.5
5.1
RF2
789
1429
4.8
1.5
1.1
7.0
IF
526
952
6.5
1.6
2.7
12.5
3.4. Self-Tuning Algorithm
The self-tuning algorithm is initiated immediately after
powerup of a PLL or, if the PLL is already powered, after
a change in its programmed output frequency. This
algorithm attempts to tune the VCO so that its freerunning frequency is near the required output frequency.
In doing so, the algorithm compensates for
manufacturing tolerance errors in the value of the
external inductance connected to the VCO. It also
reduces the frequency error for which the PLL must
correct to get the precise required output frequency. The
self-tuning algorithm leaves the VCO oscillating at a
frequency in error by somewhat less than 1% of the
desired output frequency.
L PKG
2
After self-tuning, the PLL controls the VCO oscillation
frequency. The PLL completes frequency locking,
eliminating any remaining frequency error. From then
on, it maintains frequency-lock, compensating for
effects of temperature and supply voltage variations.
L EXT
L PKG
2
Figure 15. External Inductance Connection
As a design example, consider that the goal is to
synthesize frequencies in a 25 MHz band between
1120 and 1145 MHz using the Si4133-GT. The center
frequency should be defined as midway between the
two extremes, or 1132.5 MHz. The PLL can adjust the
VCO output frequency ±5% of the center frequency, or
±56.6 MHz of 1132.5 MHz (i.e., from approximately
1076 to 1189 MHz). The RF2 VCO has a CNOM of
4.8 pF. A 4.1 nH inductance in parallel with this
capacitance yields the required center frequency. An
external inductance of 1.8 nH should be connected
between RFLC and RFLD as shown in Figure 15. This,
in addition to 2.3 nH of package inductance, presents
The Si4133’s self-tuning algorithm compensates for
component value errors at any temperature within the
specified temperature range. However, the ability of the
PLL to compensate for drift in component values that
occur after self-tuning is limited. For external
inductances
with
temperature
coefficients
approximately ±150 ppm/oC, the PLL can maintain lock
for changes in temperature of approximately ±30 oC.
Applications where the PLL is regularly powered down
or the frequency is periodically reprogrammed minimize
or eliminate the potential effects of temperature drift
because the VCO is re-tuned in either case. In
applications where the ambient temperature can drift
substantially after self-tuning, it might be necessary to
monitor the lock-detect bar (LDETB) signal on the
AUXOUT pin to determine whether a PLL is about to
run out of locking capability. See “3.10. Auxiliary Output
Rev. 1.61
17
Si4133
(AUXOUT)” for how to select LDETB. The LDETB
signal is low after self-tuning is completed but rises
when the IF or RF PLL nears the limit of its
compensation range. LDETB is also high when either
PLL is executing the self-tuning algorithm. The output
frequency is still locked when LDETB goes high, but the
PLL eventually loses lock if the temperature continues
to drift in the same direction. Therefore, if LDETB goes
high both the IF and RF PLLs should be re-tuned
promptly by initiating the self-tuning algorithm.
setting the bits to 11. The values of the available gains,
relative to the highest gain, are as follows:
Table 8. Gain Values (Register 1)
KP Bits
Relative P.D.
Gain
00
1
01
1/2
10
1/4
11
1/8
3.5. Output Frequencies
The IF and RF output frequencies are set by
programming the R- and N-Divider registers. Each PLL
has R and N registers so that each can be programmed
independently. Programming either the R- or N-Divider
register for RF1 or RF2 automatically selects the
associated output.
The reference frequency on the XIN pin is divided by R
and this signal is input to the PLL’s phase detector. The
other input to the phase detector is the PLL’s VCO
output frequency divided by N. The PLL acts to make
these frequencies equal.
The gain value bits is automatically set with the Auto KP
bit (bit 2) in the Main Configuration register to 1. In
setting this bit, the gain values are optimized for a given
value of N. In general, a higher phase detector gain
decreases in-band phase noise and increase the speed
of the PLL transient until the point at which stability
begins to be compromised. The optimal gain depends
on N. Table 9 lists recommended settings for different
values of N. These are the settings when the Auto KP bit
is set.
Table 9. Optimal KP Settings
That is, after an initial transient:
N
RF1
KP1<1:0>
RF2
KP2<3:2>
IF
KPI<5:4>
2047
00
00
00
2048 to 4095
00
00
01
4096 to 8191
00
01
10
8192 to 16383
01
10
11
16384 to 32767
10
11
11
32768
11
11
11
f REF
f OUT
------------ = ----------N
R
or
f OUT
N
= ----  f REF
R
The R values are set by programming the RF1 RDivider register (Register 6), the RF2 R-Divider register
(Register 7) and the IF R-Divider register (Register 8).
The N values are set by programming the RF1 NDivider register (Register 3), the RF2 N-Divider register
(Register 4), and the IF N-Divider register (Register 5).
Each N-Divider is implemented as a conventional high
speed divider. That is, it consists of a dual-modulus
prescaler, a swallow counter, and a lower speed
synchronous counter. However, the control of these
sub-circuits is automatically handled. Only the
appropriate N value should be programmed.
3.6. PLL Loop Dynamics
The transient response for each PLL is determined by
its phase detector update rate f (equal to fREF/R) and
the phase detector gain programmed for each RF1,
RF2, or IF synthesizer. See Register 1. Four different
settings for the phase detector gain are available for
each PLL. The highest gain is programmed by setting
the two phase detector gain bits to 00, and the lowest by
18
The VCO gain and loop filter characteristics are not
programmable.
The settling time for the PLL is directly proportional to its
phase detector update period T (T equals 1/f). A
typical transient response is shown in Figure 6 on page
11. During the first 13 update periods the Si4133
executes the self-tuning algorithm. From then on the
PLL controls the output frequency. Because of the
unique architecture of the Si4133 PLLs, the time
required to settle the output frequency to 0.1 ppm error
is automatically 25 update periods. The total time after
powerup or a change in programmed frequency until the
synthesized frequency is settled—including time for
self-tuning—is approximately 40 update periods.
Note: The settling time analysis holds for RF1 f  500 kHz.
For RF1 f > 500 kHz, the settling time is larger.
Rev. 1.61
Si4133
3.7. RF and IF Outputs
The RFOUT and IFOUT pins are driven by amplifiers
that buffer the RF VCOs and IF VCO respectively. The
RF output amplifier receives its input from the RF1 or
RF2 VCO, depending on which R- or N-Divider register
is written last. For example, programming the N-Divider
register for RF1 automatically selects the RF1 VCO
output.
Figures 13 and 14 show application diagrams for the
Si4133. The RF output signal must be ac coupled to its
load through a capacitor. An external inductance
between the RFOUT pin and the ac coupling capacitor
is required as part of an output matching network to
maximize power delivered to the load. This 2 nH
inductance can be realized with a PC board trace. The
network is made to provide an adequate match to an
external 50  load for both the RF1 and RF2 frequency
bands. The matching network also filters the output
signal to reduce harmonic distortion.
The IFOUT pin must also be ac coupled to its load
through a capacitor. The IF output level is dependent
upon the load. Figure 18 on page 20 displays the output
level versus load resistance for a variety of output
frequencies. For resistive loads greater than 500  the
output level saturates and the bias currents in the IF
output amplifier are higher than required. The LPWR bit
in the Main Configuration register (Register 0) can be
set to 1 to reduce the bias currents and therefore reduce
the power dissipated by the IF amplifier. For loads less
than 500  LPWR should be set to 0 to maximize the
output level.
For IF frequencies greater than 500 MHz, a matching
network is required to drive a 50 load. See Figure 16.
The value of LMATCH can be determined from Table 10.
Table 10. LMATCH Values
Frequency
LMATCH
500–600 MHz
40 nH
600–800 MHz
27 nH
800 MHz–1 GHz
18 nH
For frequencies less than 500 MHz, the IF output buffer
can directly drive a 200  resistive load or higher. For
resistive loads greater than 500  (f < 500 MHz) the
LPWR bit can be set to reduce the power consumed by
the IF output buffer. See Figure 17.
>500 pF
IFOUT
>200 
Figure 17. IF Frequencies < 500 MHz
3.8. Reference Frequency Amplifier
The Si4133 provides a reference frequency amplifier. If
the driving signal has CMOS levels it can be connected
directly to the XIN pin. Otherwise, the reference
frequency signal should be ac coupled to the XIN pin
through a 560 pF capacitor.
3.9. Powerdown Modes
Table 11 summarizes the powerdown functionality. The
Si4133 can be powered down by taking the PWDN pin low
or by setting bits in the Powerdown register (Register 2).
When the PWDN pin is low, the Si4133 is powered down
regardless of the Powerdown register settings. When the
PWDN pin is high, power management is in control of the
Powerdown register bits.
The IF and RF sections of the Si4133 circuitry can be
individually powered down by setting the Powerdown
register bits PDIB and PDRB low, respectively. The
reference frequency amplifier is also powered up if the
PDRB and PDIB bits are high. Also, setting the AUTOPDB
bit to 1 in the Main Configuration register (Register 0) is
equivalent to setting both bits in the Powerdown register to
1.
The serial interface remains available and can be written in
all powerdown modes.
560 pF
IFOUT
L MATCH
50 
Figure 16. IF Frequencies > 500 MHz
Rev. 1.61
19
Si4133
3.10. Auxiliary Output (AUXOUT)
The signal appearing on AUXOUT is selected by setting the AUXSEL bits in the Main Configuration register
(Register 0).
The LDETB signal can be selected by setting the AUXSEL bits to 11. This signal can be used to indicate that the IF
or RF PLL is going to lose lock because of excessive ambient temperature drift and should be re-tuned. The
LDETB signal indicates a logical OR result if both IF and RF are simultaneously generating a signal.
Table 11. Powerdown Configuration
PWDN Pin
AUTOPDB
PDIB
PDRB
PWDN = 0
X
X
X
OFF
OFF
0
0
0
OFF
OFF
0
0
1
OFF
ON
0
1
0
ON
OFF
0
1
1
ON
ON
1
x
x
ON
ON
PWDN = 1
IF Circuitry RF Circuitry
450
400
350
LPWR=1
LPWR=0
Output Voltage (mVrms)
300
250
200
150
100
50
0
0
200
400
600
800
1000
Load Resistance ()
Figure 18. Typical IF Output Voltage vs. Load Resistance at 550 MHz
20
Rev. 1.61
1200
Si4133
4. Control Registers
Table 12. Register Summary
Register Name
0
Bit Bit Bit Bit
17 16 15 14
0
0
0
Bit
13
Bit
12
Bit
11
Bit Bit Bit Bit Bit
10 9
8
7
6
Bit
4
LPWR
0
Main
Configuration
0
1
Phase
Detector
Gain
0
0
0
0
0
0
0
2
Powerdown
0
0
0
0
0
0
0
3
RF1
N-Divider
4
RF2
N-Divider
0
5
IF N-Divider
0
0
6
RF1
R-Divider
0
0
0
0
0
RRF1[12:0]
7
RF2
R-Divider
0
0
0
0
0
RRF2[12:0]
8
IF R-Divider
0
0
0
0
0
RIF[12:0]
9
Reserved
AUXSEL
[1:0]
IFDIV
Bit
5
Bit
3
Bit
2
0
0
0
0
0
0
0
0
0
KPI[1:0]
KP2[1:0]
0
0
0
0
0
0
0
[1:0]
0
AUTO AUTO
PDB
KP
0
Bit
1
Bit
0
RF
PWR
0
KP1[1:0]
PDIB
PDRB
NRF1[17:0]
NRF2[16:0]
NIF[15:0]
.
.
.
15
Reserved
Note: Registers 9–15 are reserved. Writes to these registers might result in unpredictable behavior. Registers not listed here
are reserved and should not be written.
Rev. 1.61
21
Si4133
Register 0. Main Configuration Address Field = A[3:0] = 0000
Bit
D17 D16 D15 D14 D13 D12 D11 D10
Name
22
0
0
0
0
AUXSEL
IFDIV
[1:0]
[1:0]
D9
D8
D7
D6
D5
D4
D3
D2
D1
D0
0
0
0
0
LPWR
0
AUTO
PDB
AUTO
KP
RF
PWR
0
Bit
Name
Function
17:14
Reserved
13:12
AUXSEL[1:0]
Auxiliary Output Pin Definition.
00 = Reserved.
01 = Force output low.
10 = Reserved.
11 = Lock Detect—LDETB.
11:10
IFDIV[1:0]
IF Output Divider.
00 = IFOUT = IFVCO Frequency
01 = IFOUT = IFVCO Frequency/2
10 = IFOUT = IFVCO Frequency/4
11 = IFOUT = IFVCO Frequency/8
9:6
Reserved
Program to zero.
5
LPWR
4
Reserved
Program to zero.
3
AUTOPDB
Auto Powerdown.
0 = Software powerdown is controlled by Register 2.
1 = Equivalent to setting all bits in Register 2 = 1.
2
AUTOKP
Auto KP Setting.
0 = KPs are controlled by Register 1.
1 = KPs are set according to Table 9 on page 18.
1
RFPWR
Program to zero. (Used for extended frequency operation. See AN41 for
more information.)
0
Reserved
Program to zero.
Output Power-Level Settings for IF Synthesizer Circuit.
0 = RLOAD 500 —normal power mode.
1 = RLOAD 500 —low power mode.
Program to zero.
Rev. 1.61
Si4133
Register 1. Phase Detector Gain Address Field (A[3:0]) = 0001
Bit
Name
D17 D16 D15 D14 D13 D12 D11 D10
0
0
0
0
0
0
0
D9
D8
D7
D6
0
0
0
0
0
Bit
Name
17:6
Reserved
5:4
KPI[1:0]
IF Phase Detector Gain Constant.*
N Value
KPI
<2048
= 00
2048–4095
= 01
4096–8191
= 10
>8191
= 11
3:2
KP2[1:0]
RF2 Phase Detector Gain Constant.*
N Value
KP2
<4096
= 00
4096–8191
= 01
8192–16383
= 10
>16383
= 11
1:0
KP1[1:0]
RF1 Phase Detector Gain Constant.*
N Value
KP1
<8192
= 00
8192–16383
= 01
16384–32767 = 10
>32767
= 11
D5
D4
KPI[1:0]
D3
D2
KP2[1:0]
D1
D0
KP1[1:0]
Function
Program to zero.
*Note: When AUTOKP = 1, these bits do not need to be programmed. When AUTOKP = 0, use these recommended values
for programming Phase Detector Gain.
Rev. 1.61
23
Si4133
Register 2. Powerdown Address Field (A[3:0]) = 0010
Bit
D17 D16 D15 D14 D13 D12 D11 D10 D9
Name
0
0
0
0
0
0
0
0
D8
D7
D6
D5
D4
D3
D2
0
0
0
0
0
0
0
0
Bit
Name
17:2
Reserved
1
PDIB
Powerdown IF Synthesizer.
0 = IF synthesizer powered down.
1 = IF synthesizer on.
0
PDRB
Powerdown RF Synthesizer.
0 = RF synthesizer powered down.
1 = RF synthesizer on.
D1
D0
PDIB PDRB
Function
Program to zero.
Note: Enabling any PLL with PDIB or PDRB automatically powers on the reference amplifier.
Register 3. RF1 N-Divider Address Field (A[3:0]) = 0011
Bit
D17 D16 D15 D14 D13 D12 D11 D10
D9
D8
D7
D6
D5
D4
D3
D2
D1
D0
D5
D4
D3
D2
D1
D0
NRF1[17:0]
Name
Bit
Name
17:0
NRF1[17:0]
Function
N-Divider for RF1 Synthesizer.
Register 4. RF2 N-Divider Address Field = A[3:0] = 0100
Bit
Name
24
D17 D16 D15 D14 D13 D12 D11 D10
0
D9
D8
D7
D6
NRF2[16:0]
Bit
Name
Function
17
Reserved
Program to zero.
16:0
NRF2[16:0]
N-Divider for RF2 Synthesizer.
Rev. 1.61
Si4133
Register 5. IF N-Divider Address Field (A[3:0]) = 0101
Bit
D17 D16 D15 D14 D13 D12 D11 D10
0
Name
D9
0
D8
D7
D6
D5
D4
D3
D2
D1
D0
D4
D3
D2
D1
D0
D4
D3
D2
D1
D0
NIF[15:0]
Bit
Name
Function
17:16
Reserved
Program to zero.
15:0
NIF[15:0]
N-Divider for IF Synthesizer.
Register 6. RF1 R-Divider Address Field (A[3:0]) = 0110
Bit
Name
D17 D16 D15 D14 D13 D12 D11 D10
0
0
0
0
D9
D8
0
D7
D6
D5
RRF1[12:0]
Name
Function
17:13
Reserved
Program to zero.
12:0
RRF1[12:0]
R-Divider for RF1 Synthesizer.
RRF1 can be any value from 7 to 8189 if KP1 = 00
8 to 8189 if KP1 = 01
10 to 8189 if KP1 = 10
14 to 8189 if KP1 = 11
Register 7. RF2 R-Divider Address Field (A[3:0]) = 0111
Bit
Name
D17 D16 D15 D14 D13 D12 D11 D10
0
0
0
0
D9
0
D8
D7
D6
D5
RRF2[12:0]
Bit
Name
Function
17:13
Reserved
Program to zero.
12:0
RRF2[12:0]
R-Divider for RF2 Synthesizer.
RRF2 can be any value from 7 to 8189 if KP2 = 00
8 to 8189 if KP2 = 01
10 to 8189 if KP2 = 10
14 to 8189 if KP2 = 11
Rev. 1.61
25
Si4133
Register 8. IF R-Divider Address Field (A[3:0]) = 1000
Bit
Name
26
D17 D16 D15 D14 D13 D12 D11 D10
0
0
0
0
D9
0
D8
D7
D6
D5
RIF[12:0]
Bit
Name
Function
17:13
Reserved
Program to zero.
12:0
RIF[12:0]
R-Divider for IF Synthesizer.
RIF can be any value from 7 to 8189 if KP1 = 00
8 to 8189 if KP1 = 01
10 to 8189 if KP1 = 10
14 to 8189 if KP1 = 11
Rev. 1.61
D4
D3
D2
D1
D0
Si4133
5. Pin Descriptions: Si4133-GT
SCLK
1
24
SEN
SDATA
2
23
VDDI
GNDR
3
22
IFOUT
RFLD
4
21
GNDI
RFLC
5
20
IFLB
GNDR
6
19
IFLA
RFLB
7
18
GNDD
RFLA
8
17
VDDD
GNDR
9
16
GNDD
GNDR
10
15
XIN
RFOUT
11
14
PWDN
VDDR
12
13
AUXOUT
Pin Number
Name
Description
1
SCLK
Serial clock input
2
SDATA
Serial data input
3
GNDR
Common ground for RF analog circuitry
4
RFLD
Pins for inductor connection to RF2 VCO
5
RFLC
Pins for inductor connection to RF2 VCO
6
GNDR
Common ground for RF analog circuitry
7
RFLB
Pins for inductor connection to RF1 VCO
8
RFLA
Pins for inductor connection to RF1 VCO
9
GNDR
Common ground for RF analog circuitry
10
GNDR
Common ground for RF analog circuitry
11
RFOUT
Radio frequency (RF) output of the selected RF VCO
12
VDDR
Supply voltage for the RF analog circuitry
13
AUXOUT
Auxiliary output
14
PWDN
Powerdown input pin
15
XIN
Reference frequency amplifier input
16
GNDD
Common ground for digital circuitry
17
VDDD
Supply voltage for digital circuitry
18
GNDD
Common ground for digital circuitry
19
IFLA
Pins for inductor connection to IF VCO
20
IFLB
Pins for inductor connection to IF VCO
21
GNDI
Common ground for IF analog circuitry
22
IFOUT
Intermediate frequency (IF) output of the IF VCO
23
VDDI
Supply voltage for IF analog circuitry
24
SEN
Enable serial port input
Rev. 1.61
27
Si4133
Table 13. Pin Descriptions for Si4133 Derivatives—TSSOP
28
Pin Number
Si4133
Si4123
Si4122
Si4113
Si4112
1
SCLK
SCLK
SCLK
SCLK
SCLK
2
SDATA
SDATA
SDATA
SDATA
SDATA
3
GNDR
GNDR
GNDR
GNDR
GNDD
4
RFLD
GNDR
RFLD
RFLD
GNDD
5
RFLC
GNDR
RFLC
RFLC
GNDD
6
GNDR
GNDR
GNDR
GNDR
GNDD
7
RFLB
RFLB
GNDR
RFLB
GNDD
8
RFLA
RFLA
GNDR
RFLA
GNDD
9
GNDR
GNDR
GNDR
GNDR
GNDD
10
GNDR
GNDR
GNDR
GNDR
GNDD
11
RFOUT
RFOUT
RFOUT
RFOUT
GNDD
12
VDDR
VDDR
VDDR
VDDR
VDDD
13
AUXOUT
AUXOUT
AUXOUT
AUXOUT
AUXOUT
14
PWDN
PWDN
PWDN
PWDN
PWDN
15
XIN
XIN
XIN
XIN
XIN
16
GNDD
GNDD
GNDD
GNDD
GNDD
17
VDDD
VDDD
VDDD
VDDD
VDDD
18
GNDD
GNDD
GNDD
GNDD
GNDD
19
IFLA
IFLA
IFLA
GNDD
IFLA
20
IFLB
IFLB
IFLB
GNDD
IFLB
21
GNDI
GNDI
GNDI
GNDD
GNDI
22
IFOUT
IFOUT
IFOUT
GNDD
IFOUT
23
VDDI
VDDI
VDDI
VDDD
VDDI
24
SEN
SEN
SEN
SEN
SEN
Rev. 1.61
Si4133
GNDI
IFOUT
VDDI
SEN
SCLK
SDATA
GNDR
6. Pin Descriptions: Si4133-GM
28 27 26 25 24 23 22
GNDR
1
21
GNDI
RFLD
2
20
IFLB
RFLC
3
19
IFLA
GNDR
4
18
GNDD
RFLB
5
17
VDDD
RFLA
6
16
GNDD
GNDR
7
15
XIN
GNDD
PWDN
VDDR
GNDR
10 11 12 13 14
AUXOUT
9
RFOUT
8
GNDR
GND
Pad
Pin Number
Name
Description
1
GNDR
Common ground for RF analog circuitry
2
RFLD
Pins for inductor connection to RF2 VCO
3
RFLC
Pins for inductor connection to RF2 VCO
4
GNDR
Common ground for RF analog circuitry
5
RFLB
Pins for inductor connection to RF1 VCO
6
RFLA
Pins for inductor connection to RF1 VCO
7
GNDR
Common ground for RF analog circuitry
8
GNDR
Common ground for RF analog circuitry
9
GNDR
Common ground for RF analog circuitry
10
RFOUT
Radio frequency (RF) output of the selected RF VCO
11
VDDR
Supply voltage for the RF analog circuitry
12
AUXOUT
Auxiliary output
13
PWDN
Powerdown input pin
14
GNDD
Common ground for digital circuitry
15
XIN
Reference frequency amplifier input
16
GNDD
Common ground for digital circuitry
17
VDDD
Supply voltage for digital circuitry
18
GNDD
Common ground for digital circuitry
19
IFLA
Pins for inductor connection to IF VCO
20
IFLB
Pins for inductor connection to IF VCO
21
GNDI
Common ground for IF analog circuitry
22
GNDI
Common ground for IF analog circuitry
23
IFOUT
Intermediate frequency (IF) output of the IF VCO
24
VDDI
Supply voltage for IF analog circuitry
25
SEN
Enable serial port input
26
SCLK
Serial clock input
27
SDATA
Serial data input
28
GNDR
Common ground for RF analog circuitry
Rev. 1.61
29
Si4133
Table 14. Pin Descriptions for Si4133 Derivatives—QFN
Pin Number
Si4133
Si4123
Si4122
Si4113
Si4112
1
GNDR
GNDR
GNDR
GNDR
GNDD
2
RFLD
GNDR
RFLD
RFLD
GNDD
3
RFLC
GNDR
RFLC
RFLC
GNDD
4
GNDR
GNDR
GNDR
GNDR
GNDD
5
RFLB
RFLB
GNDR
RFLB
GNDD
6
RFLA
RFLA
GNDR
RFLA
GNDD
7
GNDR
GNDR
GNDR
GNDR
GNDD
8
GNDR
GNDR
GNDR
GNDR
GNDD
9
GNDR
GNDR
GNDR
GNDR
GNDD
10
RFOUT
RFOUT
RFOUT
RFOUT
GNDD
11
VDDR
VDDR
VDDR
VDDR
VDDD
12
30
AUXOUT AUXOUT AUXOUT AUXOUT AUXOUT
13
PWDN
PWDN
PWDN
PWDN
PWDN
14
GNDD
GNDD
GNDD
GNDD
GNDD
15
XIN
XIN
XIN
XIN
XIN
16
GNDD
GNDD
GNDD
GNDD
GNDD
17
VDDD
VDDD
VDDD
VDDD
VDDD
18
GNDD
GNDD
GNDD
GNDD
GNDD
19
IFLA
IFLA
IFLA
GNDD
IFLA
20
IFLB
IFLB
IFLB
GNDD
IFLB
21
GNDI
GNDI
GNDI
GNDD
GNDI
22
GNDI
GNDI
GNDI
GNDD
GNDI
23
IFOUT
IFOUT
IFOUT
GNDD
IFOUT
24
VDDI
VDDI
VDDI
VDDD
VDDI
25
SEN
SEN
SEN
SEN
SEN
26
SCLK
SCLK
SCLK
SCLK
SCLK
27
SDATA
SDATA
SDATA
SDATA
SDATA
28
GNDR
GNDR
GNDR
GNDR
GNDD
Rev. 1.61
Si4133
7. Ordering Guide
Ordering Part
Number
Description
Operating Temperature
Si4133-D-GM
RF1/RF2/IF OUT, Lead Free, QFN
–40 to 85 ºC
Si4133-D-GT
RF1/RF2/IF OUT, Lead Free, TSSOP
–40 to 85 ºC
Si4123-D-GM
RF1/IF OUT, Lead Free, QFN
–40 to 85 ºC
Si4123-D-GT
RF1/IF OUT, Lead Free, TSSOP
–40 to 85 ºC
Si4122-D-GM
RF2/IF OUT, Lead Free, QFN
–40 to 85 ºC
Si4122-D-GT
RF2/IF OUT, Lead Free, TSSOP
–40 to 85 ºC
Si4113-D-GM
RF1/RF2 OUT, Lead Free, QFN
–40 to 85 ºC
Si4113-D-GT
RF1/RF2 OUT, Lead Free, TSSOP
–40 to 85 ºC
Si4113-D-ZT1
RF1/RF2 OUT, NiPd, TSSOP
–40 to 85 ºC
Si4112-D-GM
IF OUT, Lead Free, QFN
–40 to 85 ºC
Si4112-D-GT
IF OUT, Lead Free, TSSOP
–40 to 85 ºC
8. Si4133 Derivative Devices
The Si4133 performs both IF and dual-band RF frequency synthesis. The Si4112, Si4113, Si4122, and the Si4123
are derivatives of this device. Table 15 outlines which synthesizers each derivative device features and the pins
and registers that coincide with each synthesizer.
Table 15. Si4133 Derivatives
Name
Synthesizer
Pins
Registers
Si4112
IF
IFLA, IFLB
NIF, RIF, PDIB, IFDIV, LPWR, AUTOPDB = 0,
PDRB = 0
Si4113
RF1, RF2
RFLA, RFLB, RFLC, RFLD
NRF1, NRF2, RRF1, RRF2, PDRB, AUTOPDB = 0,
PDIB = 0
Si4122
RF2, IF
RFLC, RFLD, IFLA, IFLB
NRF2, RRF2, PDRB, NIF, RIF, PDIB, IFDIV, LPWR
Si4123
RF1, IF
RFLA, RFLB, IFLA, IFLB
NRF1, RRF1, PDRB, NIF, RIF, PDIB, IFDIV, LPWR
Si4133
RF1, RF2, IF
RFLA, RFLB, RFLC, RFLD,
IFLA, IFLB
NRF1, NRF2, RRF1, RRF2, PDRB, NIF, RIF, PDIB,
IFDIV, LPWR
Rev. 1.61
31
Si4133
9. Package Outline: Si4133-GT
Figure 19 illustrates the package details for the Si4133-GT. Table 16 lists the values for the dimensions shown in
the illustration.
24
B
E1 E
1
L
ddd C B A
1
2
e
3
Detail G
A
D
c
A
C
b
bbb M C B A
A1
See Detail G
Figure 19. 24-Pin Thin Shrink Small Outline Package (TSSOP)
Table 16. Package Diagram Dimensions
Millimeters
Symbol
A
A1
b
c
D
e
E
E1
L
1
bbb
ddd
32
Min
—
0.05
0.19
0.09
7.70
4.30
0.45
0°
Nom
—
—
—
—
7.80
0.65 BSC
6.40 BSC
4.40
0.60
—
0.10
0.20
Rev. 1.61
Max
1.20
0.15
0.30
0.20
7.90
4.50
0.75
8°
Si4133
10. Package Outline: Si4133-GM
Figure 20 illustrates the package details for the Si4133-GM. Table 17 lists the values for the dimensions shown in
the illustration.
Figure 20. 28-Pin Quad Flat No-Lead (QFN)
Table 17. Package Dimensions
Symbol
Millimeters
Symbol
Millimeters
Min
Nom
Max
Min
Nom
Max
A
0.80
0.85
0.90
L
0.50
0.60
0.70
A1
0.00
0.01
0.05
aaa
—
—
0.10
b
0.18
0.23
0.30
bbb
—
—
0.10
D, E
5.00 BSC
ccc
—
—
0.05
e
0.50 BSC
ddd
—
—
0.10

—
—
12
D2, E2
2.55
2.70
2.85
Notes:
1. Dimensioning and tolerancing per ANSI Y14.5M-1994.
2. This package outline conforms to JEDEC MS-220, variant VHHD-1.
3. Recommended card reflow profile is per the JEDEC/IPC J-STD-020B specification for Small Body
Components.
Rev. 1.61
33
Si4133
DOCUMENT CHANGE LIST
Revision 1.4 to Revision 1.5


"7.Ordering Guide" on page 31 updated.
Changed MLP to QFN (same package, generic
name)
Revision 1.5 to Revision 1.6

Updated "7.Ordering Guide" on page 31.
Revision 1.6 to Revision 1.61

34
Updated contact information.
Rev. 1.61
Si4133
NOTES:
Rev. 1.61
35
Si4133
CONTACT INFORMATION
Silicon Laboratories Inc.
400 West Cesar Chavez
Austin, TX 78701
Tel: 1+(512) 416-8500
Fax: 1+(512) 416-9669
Toll Free: 1+(877) 444-3032
Please visit the Silicon Labs Technical Support web page:
https://www.silabs.com/support/pages/contacttechnicalsupport.aspx
and register to submit a technical support request.
The information in this document is believed to be accurate in all respects at the time of publication but is subject to change without notice.
Silicon Laboratories assumes no responsibility for errors and omissions, and disclaims responsibility for any consequences resulting from
the use of information included herein. Additionally, Silicon Laboratories assumes no responsibility for the functioning of undescribed features or parameters. Silicon Laboratories reserves the right to make changes without further notice. Silicon Laboratories makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Silicon Laboratories assume
any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. Silicon Laboratories products are not designed, intended, or authorized for use in applications intended to support or sustain life, or for any other application in which the failure of the Silicon Laboratories product could create a
situation where personal injury or death may occur. Should Buyer purchase or use Silicon Laboratories products for any such unintended
or unauthorized application, Buyer shall indemnify and hold Silicon Laboratories harmless against all claims and damages.
Silicon Laboratories and Silicon Labs are trademarks of Silicon Laboratories Inc.
Other products or brandnames mentioned herein are trademarks or registered trademarks of their respective holders.
36
Rev. 1.61