Si4133/33G-EVB User's Guide

Si4133/33G-EVB
E VALUATION B OA RD F O R T H E S YNTHESIZER F AMILIES
Description
The Si4133/Si4133G synthesizer family evaluation
board is a complete, PC-based evaluation platform for
the following Silicon Laboratories devices and their
derivatives:

Si4133
 Si4133G
 Si4133G-X2
 Si4113G-X5
 Si4114G
 Si4135
 Si4136
The board includes all support circuitry necessary to
evaluate the synthesizer including a reference clock,
SMA connections for external measurement equipment,
and an interface to a personal computer for controlling
the device. The PC software is a graphical,
easy-to-use interface that allows the user to directly
enter frequencies, set divider ratios, and toggle power
control options by a parallel port connection. A PC and
power supply are all that is needed for a complete
evaluation system.
Features





Single board evaluation platform
PC-based graphical control software included on
CD-ROM for Windows 95/98
On-board frequency reference; SMA for external
reference
SMA connections for synthesizer outputs
For use with Silicon Laboratories Si4133, Si4133G,
Si4133G-X2, Si4113G-X5, Si4114G, Si4135 and
Si4136 synthesizer families (TSSOP or MLP)
Function Block Diagram
PC
Interface
PC
+
–
AUXOUT
SCLK
SDATA
SENB
RFLB
RFLC
RF1
RFLD
RF2
JRF1
+5 V
VDD
+
–
RFLA
RFOUT
Si41xx
PW DNB
+3 V
JIF1
Reference
Clock
IF
XIN
RFLC
IFOUT
RFLD
J1EXT
Rev. 0.6 11/11
Copyright © 2011 by Silicon Laboratories
Si4133/33G-EVB
Si4133/33G-EVB
Functional Description
The evaluation board accommodates the synthesizer by
providing clock circuitry, a PC interface, and other
support circuitry necessary for operation.
Synthesizer
The heart of the evaluation board is the Silicon
Laboratories frequency synthesizer. This section
includes the synthesizer integrated circuit (IC), external
tuning components, output matching, and power supply
decoupling circuitry.
For devices requiring an external inductor to establish
the center frequency for the RF1 and RF2 synthesizers,
the inductor is implemented with a printed trace. The IF
synthesizer inductor is set by an 0402-size chip
inductor. The inductors are set for the nominal center
frequencies shown in Table 1.
Outputs of the synthesizers are ac-coupled and
matched to a 50  load impedance. SMA connectors
are provided for easy connection to measurement
equipment or to target systems. Output JRF1 is
multiplexed between the RF1 and RF2 synthesizers and
is toggled through the evaluation software. See the
synthesizer data sheet for more detail. The second
output, JIF1, is connected to the IF synthesizer output.
Both the multiplexed RF output and the IF output can be
active simultaneously. Synthesizers are independently
enabled using the radio buttons in the evaluation
software.
The synthesizer IC is supplied by three different power
supplies. VDDR supplies the analog circuitry for the
RF1 and RF2 synthesizers. VDDI supplies the analog
circuitry for the IF synthesizer, and VDDD supplies the
digital prescaler, serial interface, and reference input
circuitry. Each of these supplies is bypassed to ground
with a 22 nF capacitor close to the body of the IC.
PC Interface
The frequency synthesizer IC uses a serial interface for
programming. The three primary signals are serial data
(SDATA), serial clock (SCLK), and serial enable
(SENB). These are all mapped to data pins of the PC’s
parallel port. Data is read back from the IC using the
BUSY input of the parallel port and SCLK.
One additional signal, GPO, is a multipurpose signal
used to control the synthesizer’s hardware power-down
enable (PWDNB) and/or to trigger external test
equipment. The intended use is for power-up and
channel-to-channel settling time measurements. See
the "Evaluation Software" section for more detail.
Table 1. Center Frequencies
Device
RF1 Center
Frequency (MHz)
RF2 Center
Frequency (MHz)
IF Center
Frequency (MHz)
Si4133
1600
1200
550
Si4133G
1600
1200
550
Si4133G-X2
1600
1200
1080
Si4113G-X5
1540
1365
N/A
Si4114G
1920
1780
N/A
Si4135
1750
967
170.76, 420.76
Si4136
2400
2100
550
Clock Circuitry
The reference frequency for the synthesizer is
generated on-board by a temperature-compensated,
voltage-tuned, crystal oscillator. The circuit is flexible to
allow evaluation with an external reference source or
with different frequency oscillators in varying packages.
Header JP6 selects the reference frequency source to
the frequency synthesizer IC. Either the on-board
oscillator or the external SMA input, J8, can be
selected.
noise reduction on the tuning input. Test points JP9 and
JP10 allow easy connection to the tuning voltage for
external frequency trimming or reference modulation.
Power Supplies
The evaluation board requires a 5 V supply at JP11 to
power the digital interface to the PC. The synthesizer’s
supply voltage can be taken from the on-board 3 V
regulator or a user-supplied voltage at JP11 depending
on the jumper setting at JP4.
The tuning control of the oscillator, Vc, is fixed at
(Vsupply/2) by R19 and R20. C14 provides filtering for
2
Rev. 0.6
Si4133/33G-EVB
AUXOUT
The AUXOUT pin of the frequency synthesizer can be
programmed for a variety of functions. The evaluation
board is normally populated so that this pin can be read
by the PC for serial reads from the IC. Other functions
can be monitored on the AUXOUT test point as well.
Refer to the appropriate synthesizer data sheet for
details of AUXOUT’s functionality and configuration.
Hardware Power Down
The hardware power-down input, PWDNB, can be
driven several different ways on the evaluation board.
The default configuration is pulled high (enabled)
through a resistive pull-up, R21. This pin may be
controlled through an external source or via evaluation
software.
To control PWDNB with an external generator, place a
shorting block on JP3. There should not be a shorting
block on JP2. Connect the output of the generator to
test point PWDNB. The test point labeled GND should
be connected to the shield of the cable.
The evaluation software can power down the
synthesizer through the PWDNB pin. JP2 and JP3 must
both be jumpered to use this feature. The PWDNB test
point can then be used to monitor the PWDNB signal.
Refer to the appropriate synthesizer data sheet for a
complete explanation of software and hardware power
management options.
Table 2. Jumper Settings
Function
Synthesizer and Reference
Clock Power
Reference Clock
Option
Jumper Settings
Notes
On-board
regulator
JP4: jumper REG to 3 V
No supply required on JP11 3 V pin
User-supplied
JP4: jumper UNREG to
3V
Supply required on JP11 3 V pin
On-board
reference clock
JP5: jumper TCXO to ON
JP6: TCXO to XIN
No clock required on J8
User-supplied
PWDNB
JP5: jumper TCXO to OFF
Clock signal required on J8;
JP6: EXT to XIN
Check data sheet for requirements.
Always high
JP2: no jumper
JP3: no jumper
Power-up/down controlled by
register settings.
Driven by PC
JP2: jumper
JP3: jumper
PWDNB controlled by evaluation
software; Connect instrumentation
trigger to PWDNB/GND test points.
Driven by external
generator
JP2: no jumper
JP3: jumper
PWDNB provided by external generator connected to PWDNB/GND
test points.
Rev. 0.6
3
Si4133/33G-EVB
Table 3. Test Points
Function
Auxiliary Output
PC Interface
Power
PWDNB
Reference Frequency Control
Designator
Signal
AUXOUT
AUXOUT signal from synthesizer
SCLK
Serial clock from PC parallel port
SDATA
Serial data from PC parallel port
SENB
Serial enable from PC parallel port
GPO
General purpose output from PC parallel port
3V
Power supply to synthesizer and on-board reference oscillator
GND
Ground reference for 3 V test point
PWDNB
PWDNB signal from synthesizer or GPO from PC parallel port
GND
Ground reference for PWDNB test point
VC
Frequency control input on TCVCXO
GND
Ground reference for VC test point
Table 4. Connectors
Function
Designator
Signal
PC Parallel Port Interface
JP1
Parallel port connection to PC
Power
JP11
5 V supply for parallel port interface and optional 3 V supply
for synthesizer and reference oscillator
RF Outputs
JIF1
IF synthesizer output, nominal 50 
JRF1
RF synthesizer output, nominal 50 
J8
External reference frequency input, selected by JP6
External Reference Input
4
Rev. 0.6
Si4133/33G-EVB
Evaluation Software
The Silicon Laboratories evaluation software is a
graphical, Windows-based user interface to the Silicon
Laboratories synthesizer family. The interface allows the
user to directly enter counter integers, frequencies, or
control bits without the need to compute and format bitlevel register information. Hardware connection to the
evaluation board is through a standard parallel port.
Installation
After the CD is inserted into the computer, the installer
should run automatically. The installer can also be
invoked by running the “Installer.exe” program at the
root directory of the CD. The CD contains installers for
several programs. Select the appropriate device from
the list.
Window Overview
Control data may be entered in a variety of ways. Each
numerical parameter can either be entered directly from
the keyboard by selecting the box and typing or can be
stepped using the up/down arrow keys. Control bits are
selected or deselected by radio buttons.
Note: The windows shown in these figures are specific to the
Si4133 Programmer, version 1.3.6. Evaluation software and options may vary for other synthesizers and
software versions.
Figure 1. Evaluation Software
Rev. 0.6
5
Si4133/33G-EVB
Controls
Auxiliary Output Control
The various controls are described below.
Auxiliary Output Control selects the function of the
AUXOUT pin. This pin can be used to monitor various
functions internal to the synthesizer. Refer to the
appropriate synthesizer data sheet for details.
Reference Divider,
Update Rate
Reference
Frequency,
and
The reference divider value sets the update rate of the
phase detector for a given reference frequency. This
value can be set by either using the R-Divider input, the
Reference input, or the Update Rate input. All of these
controls are linked to set the R Divider in the
synthesizer. Writing to any of these registers for RF1 or
RF2 will select the associated synthesizer at the
RFOUT output.
The R-Divider input directly sets the R Divider of the
synthesizer. Changes made to this value will then
change the update rate and the synthesized frequency.
The Reference input changes all R Dividers to values
such that the update rate and synthesized frequency
remain at approximately the same value for the entered
reference frequency. Note that this changes only the
R Divider not the actual reference frequency of the onboard oscillator.
Changing the Update Rate input changes the R and
N Dividers to maintain the same synthesized frequency
for a given reference frequency.
Phase Detector
This pin also performs the serial read function of the
synthesizer registers by the PC. Serial data will appear
at this pin if “Verify Device Writes” or if the VCO Tuning
Meters are enabled in the SiLabs pull-down menu.
Power Down Control
The Power Down Control radio buttons select the
various software power-down options of the frequency
synthesizer IC. (See Figure 2.) The label for each radio
button corresponds to the name of the control bit being
programmed. See the appropriate synthesizer data
sheet for a complete description of power control
options.
Figure 2. Power-Down Control Radio Buttons
The phase detector value window sets the relative gain
of the phase detector. Refer to the appropriate
synthesizer data sheet for further information about
setting of the phase detector gain.
AUTOPDB, Force All On, forces the reference amplifier,
the RF synthesizers, and the IF synthesizer on. These
synthesizers can be enabled independently of each
other using PDIB and PDRB.
The Auto KP option will automatically select the best KP
for phase noise, settling time, and loop stability.
The hardware PWDNB input overrides all power-up
settings selected in this window. The serial interface
remains active when powered down.
VCO and N Divider
The N Divider can be set by an integer in the N-Divider
register or by a decimal frequency in the VCO window.
Writing to either of these registers for RF1 or RF2 will
select the associated synthesizer at the JRF1
connector. The N-Divider window writes directly to the
N Divider of the synthesizer.
The values entered in the VCO register will cause the
software to automatically compute and set the N
register to generate the specified frequency.
Menus and Options
Menus and options are described below.
File Menu
The File menu allows register configurations to be
saved and restored. By default, configurations are
stored as .cfg files in the Configurations folder within the
Si4133 Programmer folder. (See Figure 3.)
RF Select
The RF Select toggle switch selects the RF1 or RF2
synthesizer output on the JRF1 connector. This control
does not correspond to an actual control bit.
Synthesizers are toggled by writing to the N Divider of
the selected synthesizer. User applications should
select the active synthesizer by writing to the N or R
register as outlined in the appropriate synthesizer data
sheet.
6
Rev. 0.6
Si4133/33G-EVB
Figure 5. SiLabs Menu
Figure 3. File Menu
The configuration files are text files and can be viewed
and edited with a text editor such as Microsoft
Notepad™ or Wordpad™.
Edit Menu
The Edit menu allows for copy and paste operations
between input windows. (See Figure 4.)
Selecting Write All Registers refreshes all registers of
the frequency synthesizer IC. This should be selected
upon power up to ensure all registers are refreshed.
Selecting Verify Device Writes reads and verifies the
content of the registers as they are written. If a
discrepancy occurs, a pop-up window will show “Device
Write Verification Failed.” (See Figure 6.)
Figure 6. Write Fail
The data is read from the frequency synthesizer to the
PC through the AUXOUT port. Data read from this
register temporarily overrides the function programmed
to this pin.
Figure 4. Edit Menu
SiLabs Menu
The SiLabs menu contains the controls specific to the
Silicon Laboratories evaluation software and its
hardware interface. (See Figure 5.)
Show VCO Tuning enables graphical, meter-type
displays of the self-tuning results of each VCO. The
VCO tuning meters are useful when selecting the
values for external inductances or monitoring lock
behavior. When the needle is at the extreme left of the
display, the VCO is operating at the lower end of its
frequency range. Similarly, when the needle is at the
extreme right of the display, the VCO is operating at the
upper end of its frequency range. (See Figure 7.)
Rev. 0.6
7
Si4133/33G-EVB
Figure 7. VCO Tuning
Detailed information on the operation and interpretation
of the self-tuning algorithm is available in the appendix
of the frequency synthesizer data sheet entitled,
“Evaluating Self Tuning Results.”
The Show Register Values option enables a display of
the contents of the synthesizer registers. (See
Figure 8.) This is useful in computing register values for
application software or for debugging. Refer to the
Control Register section of the applicable synthesizer
data sheet for definition of the values shown.
Figure 8. Show Registers
The Loop Utility allows the user to automatically toggle
between two register settings as shown in Figure 9.
Applications include power-up settling time and
channel-to-channel settling time measurements. The
GPO hardware port is also controlled through the Utility
switch in this window to either power down the
synthesizer through its hardware port or to trigger
external test equipment to correspond to a register
write.
Figure 9. Loop Utility
8
Rev. 0.6
Si4133/33G-EVB
The loop executes sequentially when the green Loop
button is selected and repeats until the red Stop button
is pressed. There are four steps. In the first, the register
selected in the First Register pull-down box is written
with the value in the First Value box. The GPO
hardware signal on the evaluation board is set high or
low dependent on the First Utility switch setting.
Help Menu
The version number of the software appears in Help
About.
Contact Silicon Laboratories directly for evaluation
software support.
The second step is a delay, entered in milliseconds. The
third and fourth steps are set similarly to the first and
second.
The configuration shown in Figure 9 could be used to
measure channel-to-channel settling time. Steps 1 and
2 set the N counter of the RF1 synthesizer to a given
frequency, set the GPO utility signal low, and then
pause for 100 milliseconds. Steps 3 and 4 then
reprogram the N counter for a different frequency, set
the GPO utility port high to trigger measurement
equipment, and delay for another 100 ms. The loop
repeats so that the measurement equipment can
average over several channel changes. In this
measurement, the evaluation board should have J2 and
JP3 jumpered so that the GPO signal is routed to the
PWDNB test point for connection to the test equipment
trigger port and also to the PWDNB pin of the
synthesizer.
The Open Loop... menu selection invokes the window
shown in Figure 10. By setting the VCO to operate at its
minimum and maximum frequencies, the center
frequency can be calculated by averaging these two
extremes.
Figure 10. Open Loop Menu
Selecting Device ID... causes a pop-up window to
appear with an internal device code displayed.
Selecting Set Parallel Port allows the user to select
either LPT1 or LPT2 to control the evaluation board.
Rev. 0.6
9
Si4133/33G-EVB
Schematics and Layouts
Table 5. Guide to Schematics and Layouts
10
Evaluation Kit
Device
Schematic Figures
Layout Figures
Si4133-EVB
Si4133-BT
Figures 11 and 12
Figures 21 through 25
Si4133M-EVB
Si4133-BM
Figures 13 and 14
Figures 26 through 30
Si4133G-EVB
Si4133G-BT
Figures 11 and 12
Figures 21 through 25
Si4133GM-EVB
Si4133G-BM
Figures 13 and 14
Figures 26 through 30
Si4133GT2-EVB
Si4133G-XT2
Figures 11 and 12
Figures 21 through 25
Si4133GM2-EVB
Si4133G-XM2
Figures 13 and 14
Figures 26 through 30
Si4113GX5-EVB
Si4113GX5-BM
Figures 15 and 16
Figures 31 through 35
Si4114G-EVB
Si4114G-BM
Figures 15 and 16
Figures 31 through 35
Si4135M-EVB
Si4135-BM
Figures 17 and 18
Figures 36 through 40
Si4136-EVB
Si4136-BT
Figures 19 and 20
Figures 41 through 45
Rev. 0.6
Rev. 0.6
GND
JRF1
L4
2nH
C4
560pF
Trace Inductor
L1
+3VDDRF
GND
Trace Inductor
L2
SENB
VDDI
IFOUT
GNDI
IFLB
IFLA
GNDD
VDDD
GNDD
XIN
PDNB
AUXO
Si4133TSSOP
SCLK
SDATA
GNDR
RFLD
RFLC
GNDR
RFLB
RFLA
GNDR
GNDR
RFOUT
VDDR
U1
24
23
22
21
20
19
18
17
16
15
14
13
GND
560pF
40nH
Pad
1.5 mm
Trace
0.156 mm
GND
C3
22nF
JIF1
GND
2.035 mm
Trace
Pad
1.5 mm
Trace Inductor L2
300 um
+3VDDRF
C5
L5
Trace Inductor L1
10nH
300 um
L3
GND
+3VDDRF
Figure 11. Si4133 TSSOP (1 of 2)
GND
C1
22nF
1
2
3
4
5
6
7
8
9
10
11
12
C2
22nF
R1 0R
AUXOUT
PWDNB
XIN
SENB
SCLK
SDATA
Si4133/33G-EVB
11
Rev. 0.6
1
2
3
JP11
Euro_term
Si41aj-PCB
4 Layer FR4
1
3
5
7
9
11
13
15
17
19
21
23
25
120k
R10
1k
R15
120k
R13
1
3
2
LP2980AIM-3.0
Vin
Vout
ON/OFF
GND
N/C
4
5
GND
C10
100pF
+
GND
C17
10uF
1OE
2OE
2Y1
2Y2
2Y3
2Y4
GND Vcc
2A1
2A2
2A3
2A4
JP4
1
2
3
74LVTH241
Reg
3V
Unreg
GND
10
11
13
15
17
20
1
19
9
7
5
3
C19
10uF
C15
10uF
+
+3VDDRF
GND
C12
22nF
+3VDD
GND
C18
10uF
R24 0R
+
JP5
GND
C13
22nF
GND
TCXO
ON OFF
GND
C14
10uF
+
R19
47k
4
3
1
2
GND
R25 0R
2.6
6.5
GND
1
1
VC
J7
AUXOUT
GND
GND
TCXO Footprint
GND
R20
47k
13.0MHz TCXO
VDD AFC
OUTGND
U12
J6
SCLK
PWDNB
J5
SDATA
JP2
J4
SENB
Note 1: Header test point spacing : 200 mil
GND
R23
0R
+3VDD
+3VDD
J3
GND
J2
+3VDD
Figure 12. Si4133 TSSOP (2 of 2)
top copper: 35 microns (1 oz final copper + plating thickness)
first dielectric: FR4, 210 microns, tolerance +/- 10%
ground: 35 microns
second dielectric: FR4, 1025 microns, tolerance +/- 20%
Vdd: 35 microns
third dielectric: FR4, 210 microns, tolerance +/- 10%
bottom copper: 35 microns
----------------------------------------------------------------------Total thickness: 1585 microns
C16
10uF
120k
120k
R11
+
U11
R14 1k
PC_AUXOUT
PC_PWDNB
PC_SEND
PC_SDATA
PC_SCLK
2
4
6
8
1
R12
+5VCC
PCB1
HEADER 13X2
+5VCC
GND
+3VDD
GND
2
4
6
8
10
12
14
16
18
20
22
24
26
JP1
1A1
1A2
1A3
1A4
1
1Y1
1Y2
1Y3
1Y4
1
1
+3VDDRF
GND
1.1
8.0
Units : mm
JP10
JP9
See
Note 1
R26
n/f
JP3
PWDNB
Enable
R22 0R
GPO / External
PWDNB
See
JP7 JP8
Note 1
1
18
16
14
12
1
2
1
1
1
1
2
3
R16 47K
GPO
Enable
1
1
2
R17 47K
J1
GPO
R18 47K
U10
JP6
C11 100pF
GND
External Reference
Input
J8
XIN
TCXO EXT
R21
47k
+3VDDRF
1
2
3
12
+
+5VCC
XIN
AUXOUT
SCLK
SDATA
SENB
PWDNB
Si4133/33G-EVB
GND
JRF1
Trace Inductor
L1
L4
2nH
C4
560pF
GND
Trace Inductor
L2
GNDR
RFLD
RFLC
GNDR
RFLB
RFLA
GNDR
U1
Rev. 0.6
GND
C1
22nF
21
20
19
18
17
16
15
GND
Si4133MLP
GNDI
IFLB
IFLA
GNDD
VDDD
GNDD
XIN
GND
C2
22nF
L3
10nH
GND
40nH
L5
+3VDDRF
Pad
0.8 mm
Trace
1.58 mm
Trace Inductor L1
GND
0R
R1
Figure 13. Si4133 MLP (1 of 2)
+3VDDRF
GND
1
2
3
4
5
6
7
28
27
26
25
24
23
22
GNDR
SDATA
SCLK
SENB
VDDI
IFOUT
GNDI
GNDR
GNDR
RFOUT
VDDR
AUXOUT
PWDNB
GNDD
8
9
10
11
12
13
14
JIF1
GND
C3
22nF
+3VDDRF
560pF
C5
4.17 mm
Trace
0.8 mm
Pad
Trace Inductor L2
GND
AUXOUT
PWDNB
XIN
SENB
SCLK
SDATA
Si4133/33G-EVB
13
Rev. 0.6
1
2
3
JP11
Euro_term
Si41ai-PCB
4 Layer FR4
1
3
5
7
9
11
13
15
17
19
21
23
25
120k
R10
1k
R15
120k
R13
1
3
2
LP2980AIM-3.0
Vin
Vout
ON/OFF
GND
N/C
U11
R14 1k
4
5
GND
C10
100pF
+
GND
C17
10uF
PC_PWDNB
PC_SEND
PC_SDATA
PC_SCLK
PC_AUXOUT
1OE
2OE
2Y1
2Y2
2Y3
2Y4
GND Vcc
2A1
2A2
2A3
2A4
JP4
1
2
3
74LVTH241
Reg
3V
Unreg
GND
10
11
13
15
17
20
1
19
9
7
5
3
C19
10uF
C15
10uF
+
+3VDDRF
GND
C12
22nF
+3VDD
GND
GND
C18
10uF
R24 0R
+
JP5
GND
C13
22nF
GND
TCXO
ON OFF
C14
10uF
+
R19
47k
Note 1: Header test point spacing : 200 mil
GND
R23
0R
+3VDD
+3VDD
4
3
1
2
GND
R25 0R
2.6
6.5
R22 0R
1.1
8.0
Units : mm
JP10
JP9
GND
R26
n/f
JP3
PWDNB
Enable
+3VDDRF
See
Note 1
GND
1
1
VC
J7
AUXOUT
GND
GND
TCXO Footprint
GND
R20
47k
13.0MHz TCXO
VDD AFC
OUTGND
U12
J6
SCLK
J5
SDATA
J4
SENB
J3
GND
PWDNB
J2
+3VDD
Figure 14. Si4133 MLP (2 of 2)
top copper: 35 microns (1 oz final copper + plating thickness)
first dielectric: FR4, 210 microns, tolerance +/- 10%
ground: 35 microns
second dielectric: FR4, 1025 microns, tolerance +/- 20%
Vdd: 35 microns
third dielectric: FR4, 210 microns, tolerance +/- 10%
bottom copper: 35 microns
----------------------------------------------------------------------Total thickness: 1585 microns
C16
10uF
120k
R11
+
120k
R12
+5VCC
PCB1
HEADER 13X2
+5VCC
GND
+3VDD
GND
2
4
6
8
10
12
14
16
18
20
22
24
26
JP1
1A1
1A2
1A3
1A4
1
1Y1
1Y2
1Y3
1Y4
GPO / External
PWDNB
See
JP7 JP8
Note 1
1
JP2
1
GPO
Enable
1
1
1
1
J1
GPO
1
2
1
1
2
3
R16 47K
2
4
6
8
R18 47K
U10
1
1
2
R17 47K
18
16
14
12
JP6
C11 100pF
GND
External Reference
Input
J8
XIN
TCXO EXT
R21
47k
+3VDDRF
1
2
3
14
+
+5VCC
XIN
AUXOUT
SCLK
SDATA
SENB
PWDNB
Si4133/33G-EVB
1
3
5
7
9
11
13
15
17
19
21
23
25
Rev. 0.6
120k
R11
120k
R10
C16
10uF
120k
R12
+
120k
R13
+5VCC
1k
R15
1
3
2
Si41ao-PCB
4 Layer FR4
PCB1
TPS76030DBV
Vin
Vout
ON/OFF
GND
N/C
U11
R14 1k
4
5
10uF
C19
GND
C10
100pF
GND
+
+
PC_GPO
PC_SEND
PC_SDATA
PC_SCLK
GND
C17
10uF
PC_AUXOUT
1OE
2OE
2Y1
2Y2
2Y3
2Y4
GND Vcc
2A1
2A2
2A3
2A4
JP4
1
2
3
74LVTH241
Reg
3V
Unreg
GND
10
11
13
15
17
1A1
1A2
1A3
1A4
20
1
19
9
7
5
3
+
GND
2.6
6.5
TCXO Footprint
C15
10uF
+3VDDRF
GND
C12
22nF
+3VDD
GND
+
1.1
8.0
Units : mm
C18
10uF
R24 0R
R23
0R
+3VDD
+3VDD
GND
C13
22nF
GND
JP5
GND
TCXO
ON OFF
J3
GND
J2
+3VDD
C14
10uF
+
R19
47k
4
3
1
2
GND
R20
47k
13.0MHz TCXO
VDD AFC
OUTGND
U12
J6
SCLK
PWDNB
1
1
GND
R25 0R
R22 0R
1
GND
JP10
JP3
PWDNB
Enable
+3VDDRF
See
Note
VC
1 JP9
1
J7
AUXOUT
GND
GND
GPO / External
PWDNB
See
JP7 JP8
Note
1
J5
SDATA
JP2
J4
SENB
Figure 15. Si4113GX5 MLP (1 of 2)
top copper: 35 microns (1 oz final copper + plating thickness)
first dielectric: FR4, 210 microns, tolerance +/- 10%
ground: 35 microns
second dielectric: FR4, 1025 microns, tolerance +/- 20%
Vdd: 35 microns
third dielectric: FR4, 210 microns, tolerance +/- 10%
bottom copper: 35 microns
----------------------------------------------------------------------Total thickness: 1585 microns
Note 1: Header test point spacing : 200 mil
Euro_term
1
2
3
JP11
HEADER 13X2
+5VCC
GND
+3VDD
GND
2
4
6
8
10
12
14
16
18
20
22
24
26
JP1
1Y1
1Y2
1Y3
1Y4
1
GPO
Enable
1
J1
GPO
1
2
4
6
8
1
2
1
U10
R16 47K
18
16
14
12
1
GND
R26
n/f
AUXOUT
SCLK
SDATA
SENB
PWDNB
GND
J8
R27
50
XIN
External Reference
Input
GND
C11 100pF
JP6
R21
47k
+3VDDRF
XIN
TCXO EXT
1
2
R17 47K
1
1
1
2
3
R18 47K
1
2
3
+5VCC
Si4133/33G-EVB
15
Rev. 0.6
Pad
0.8 mm
Trace
1.75 mm
Trace Inductor L1
L4
2nH
C4
560pF
2.33 mm
Trace
+3VDDRF
GND
GNDR
RFLD
RFLC
GNDR
RFLB
RFLA
GNDR
U1
GND
C1
22nF
21
20
19
18
17
16
15
GND
Si4113GX5-BM
GNDD
GNDD
GNDD
GNDD
VDDD
GNDD
XIN
Figure 16. Si4113GX5 MLP (2 of 2)
0.8 mm
Pad
Trace Inductor L2
GND
JRF1
Trace Inductor
L1
GND
Trace Inductor
L2
1
2
3
4
5
6
7
+3VDDRF
28
27
26
25
24
23
22
GNDR
SDATA
SCLK
SENB
VDDD
GNDD
GNDD
GNDR
GNDR
RFOUT
VDDR
AUXOUT
PWDNB
GNDD
16
8
9
10
11
12
13
14
GND
GND
C3
22nF
+3VDDRF
AUXOUT
PWDNB
XIN
SENB
SCLK
SDATA
Si4133/33G-EVB
1
3
5
7
9
11
13
15
17
19
21
23
25
Rev. 0.6
120k
R11
120k
R10
C16
10uF
120k
R12
+
120k
R13
+5VCC
1k
R15
R29 1k
1
3
2
Si41ap-PCB
4 Layer FR4
PCB1
R30 1k
R28 1k
C21
100pF
4
5
10uF
C23
C22
100pF
GND
+
+
GND
GND
C17
10uF
C10
100pF
PC_GPO
PC_SENB
PC_SDATA
PC_SCLK
PC_AUXOUT
1OE
2OE
2Y1
2Y2
2Y3
2Y4
GND Vcc
2A1
2A2
2A3
2A4
JP4
1
2
3
74LVTH241
Reg
3V
Unreg
GND
10
11
13
15
17
1A1
1A2
1A3
1A4
20
1
19
9
7
5
3
C15
10uF
GND
C12
22nF
+
GND
+3VDD
GND
C18
10uF
R24 0R
R23
0R
+3VDD
+3VDD
+
GND
C13
22nF
GND
JP5
GND
TCXO
ON OFF
J3
GND
J2
+3VDD
Figure 17. Si4135 MLP (1 of 2)
top copper: 35 microns (1 oz final copper + plating thickness)
first dielectric: FR4, 210 microns, tolerance +/- 10%
ground: 35 microns
second dielectric: FR4, 1025 microns, tolerance +/- 20%
Vdd: 35 microns
third dielectric: FR4, 210 microns, tolerance +/- 10%
bottom copper: 35 microns
----------------------------------------------------------------------Total thickness: 1585 microns
TPS76030DBV
Vin
Vout
ON/OFF
GND
N/C
U11
C20
100pF
R14 1k
Note 1: Header test point spacing : 200 mil
Euro_term
1
2
3
JP11
HEADER 13X2
+5VCC
GND
+3VDD
GND
2
4
6
8
10
12
14
16
18
20
22
24
26
JP1
1Y1
1Y2
1Y3
1Y4
1
C14
10uF
R19
47k
+
4
3
1
2
1.1
8.0
TCXO Footprint
GND
R20
47k
GND
JP10
JP9
2.6
6.5
GND
R26
n/f
GND
J8
R27
50
XIN
AUXOUT
SCLK
SDATA
SENB
PWDNB
External Reference
Input
GND
C11 100pF
JP6
R21
47k
+3VDD
XIN
TCXO EXT
JP3
PWDNB
Enable
R22 0R
Units : mm
See
Note
1
GND
1
1
VC
J7
AUXOUT
GND
GND
R25 0R
19.68 MHz TCXO
VDD AFC
OUTGND
U12
J6
SCLK
J5
SDATA
PWDNB
See GPO / External
Note PWDNB
1
JP7 JP8
J4
SENB
JP2
1
GPO
Enable
1
1
J1
GPO
1
2
4
6
8
1
2
1
1
1
1
2
3
1
2
U10
1
18
16
14
12
1
2
3
+5VCC
Si4133/33G-EVB
17
Rev. 0.6
0.6 mm
0.8 mm
RFLD
NC
RFLC
RFLB
RFLA
GND
RFOUT
560pF
place close to U1
C4
5.6nH
1
2
3
4
5
6
7
U1
L4
GND
C1
22nF
560pF
C5
VDDI
IFLA
IFLB
PTSTEN
VDDD
GND
XIN
Si4135-BM
21
20
19
18
17
16
15
GND
27nH
GND
close to U1.17
L3
close to U1.21
C2
22nF
C3
22nF
place close to U1
47nH
GND
L5
GND
See
Note
1
Figure 18. Si4135 MLP (2 of 2)
Pad
Pad
Pad
Pad
0.72 mm
0.8 mm
0.3 mm
Fill
Pad
Trace Inductor L1
Trace Inductor
L1
Trace Inductor L2
Trace Inductor
L2
close to U1.28
+3VDD
GND
1
GND
PWDNB
SENB
SCLK
SDATA
DAUX
GND
8
9
10
11
12
13
14
make cuttable
AAUX
1
28
27
26
25
24
23
22
VDDR
TEST
NC
AAUX
GND
IFOUT
GND
JTST1
AAUX
120k
R31
JP12
VDD PTSTEN
1
2
18
J10 J9
JRF1
GND
JIF1
GND
PWDNB
SENB
SCLK
SDATA
AUXOUT
XIN
GND
Si4133/33G-EVB
Rev. 0.6
GND
JRF1
470pF
C4
L4
0R
+3VDDRF
GND
GND
SCLK
SDATA
GNDR
RFLD
RFLC
GNDR
RFLB
RFLA
GNDR
GNDR
RFOUT
VDDR
U1
Si4136-BT
SEND
VDDI
IFOUT
GNDI
IFLB
IFLA
GNDD
VDDD
GNDD
XIN
PDNB
AUXO
24
23
22
21
20
19
18
17
16
15
14
13
L3
10nH
GND
GND
40nH
L5
560pF
C5
+3VDDRF
C3
22nF
GND
+3VDDRF
Figure 19. Si4136 TSSOP (1 of 2)
C1
22nF
1
2
3
4
5
6
7
8
9
10
11
12
C2
22nF
R1 0R
JIF1
GND
AUXOUT
PWDNB
XIN
SENB
SCLK
SDATA
Si4133/33G-EVB
19
Rev. 0.6
1
2
3
JP11
Euro_term
Si41ak-PCB
4 Layer FR4
1
3
5
7
9
11
13
15
17
19
21
23
25
120k
R10
1k
R15
120k
R13
1
3
2
LP2980AIM-3.0
Vin
Vout
ON/OFF
GND
N/C
U11
R14 1k
4
5
GND
C10
100pF
+
GND
C17
10uF
PC_PWDNB
PC_SEND
PC_SDATA
PC_SCLK
PC_AUXOUT
1OE
2OE
2Y1
2Y2
2Y3
2Y4
GND Vcc
2A1
2A2
2A3
2A4
JP4
1
2
3
74LVTH241
Reg
3V
Unreg
GND
10
11
13
15
17
20
1
19
9
7
5
3
C19
10uF
C15
10uF
+
+3VDDRF
GND
C12
22nF
+3VDD
GND
GND
GND
+
JP5
GND
C13
22nF
GND
TCXO
ON OFF
C14
10uF
+
R19
47k
4
3
Note 1: Header test point spacing : 200 mil
C18
10uF
R24 0R
R23
0R
+3VDD
+3VDD
1
2
GND
R25 0R
2.6
6.5
GND
1
1
VC
J7
AUXOUT
GND
GND
TCXO Footprint
GND
R20
47k
13.0MHz TCXO
VDD AFC
OUTGND
U12
J6
SCLK
J5
SDATA
J4
SENB
J3
GND
PWDNB
J2
+3VDD
Figure 20. Si4136 TSSOP (2 of 2)
top copper: 35 microns (1 oz final copper + plating thickness)
first dielectric: FR4, 210 microns, tolerance +/- 10%
ground: 35 microns
second dielectric: FR4, 1025 microns, tolerance +/- 20%
Vdd: 35 microns
third dielectric: FR4, 210 microns, tolerance +/- 10%
bottom copper: 35 microns
----------------------------------------------------------------------Total thickness: 1585 microns
C16
10uF
120k
R11
+
120k
R12
+5VCC
PCB1
HEADER 13X2
+5VCC
GND
+3VDD
GND
2
4
6
8
10
12
14
16
18
20
22
24
26
JP1
1A1
1A2
1A3
1A4
1
1Y1
1Y2
1Y3
1Y4
+3VDDRF
GND
1.1
8.0
Units : mm
JP10
JP9
See
Note 1
R26
n/f
JP3
PWDNB
Enable
R22 0R
GPO / External
PWDNB
See
Note 1
JP7 JP8
1
JP2
1
GPO
Enable
1
1
1
1
J1
GPO
1
2
1
1
2
3
R16 47K
2
4
6
8
R18 47K
U10
1
1
2
R17 47K
18
16
14
12
JP6
C11 100pF
GND
External Reference
Input
J8
XIN
TCXO EXT
R21
47k
+3VDDRF
1
2
3
20
+
+5VCC
XIN
AUXOUT
SCLK
SDATA
SENB
PWDNB
Si4133/33G-EVB
Si4133/33G-EVB
Figure 21. Si4133BT Silkscreen
Figure 22. Si4133BT Component
Rev. 0.6
21
Si4133/33G-EVB
Figure 23. Si4133BT Ground
Figure 24. Si4133BT Power
22
Rev. 0.6
Si4133/33G-EVB
Figure 25. Si4133BT Solder
Figure 26. Si4133M Silkscreen
Rev. 0.6
23
Si4133/33G-EVB
Figure 27. Si4133M Component
Figure 28. Si4133M Ground
24
Rev. 0.6
Si4133/33G-EVB
Figure 29. Si4133M Power
Figure 30. Si4133M Solder
Rev. 0.6
25
Si4133/33G-EVB
Figure 31. Si4113GX5-BM Silkscreen
Figure 32. Si4113GX5-BM Component
26
Rev. 0.6
Si4133/33G-EVB
Figure 33. Si4113GX5-BM Ground
Figure 34. Si4113GX5-BM Power
Rev. 0.6
27
Si4133/33G-EVB
Figure 35. Si4113GX5-BM Solder
Figure 36. Si4135M Silkscreen
28
Rev. 0.6
Si4133/33G-EVB
Figure 37. Si4135M Component
Figure 38. Si4135M Ground
Rev. 0.6
29
Si4133/33G-EVB
Figure 39. Si4135M Power
Figure 40. Si4135M Solder
30
Rev. 0.6
Si4133/33G-EVB
Figure 41. Si4136BT Silkscreen
Figure 42. Si4136BT Component
Rev. 0.6
31
Si4133/33G-EVB
Figure 43. Si4136BT Ground
Figure 44. Si4136BT Power
32
Rev. 0.6
Si4133/33G-EVB
Figure 45. Si4136BT Solder
Rev. 0.6
33
Si4133/33G-EVB
Bill of Materials
Part
Reference
Value
C1,C2*,C3,C12,C13
C4,C5 *
C10,C11
C14,C15,C16,C17,C18,C19
JRF1,JIF1*,J8
JP1
JP2,JP3
JP4,JP5,JP6
JP7
JP8
JP9
J3,JP10
JP11
J1
J2
J4
J5
J6
J7
L1
L2
L3
L3
L4
L4
L5
R1
R10,R11,R12,R13
R14,R15
R16,R17,R18,R19,R20,R21
R22,R23,R24,R25
R26
U1
U1
U1
U1
U1
U1
U1
U1
U10
U11
U12
22nF
560pF
100pF
10uF
SMA_E
HEADER 13X2
HEADER 2
HEADER 3
PWDNB
GND
VC
GND
Euro_term
GPO
+3VDD
SENB
SDATA
SCLK
AUXOUT
Trace Inductor
Trace Inductor
10nH
0R
2nH
0R
40nH
0R
120k
1k
47k
0R
n/f
Si4133-BT
Si4133-BM
Si4133G-BT
Si4133G-BM
Si4133G-XT2
Si4133G-XM2
Si4136-BT
Si4113G-X5
74LVTH241
TPS76030DBV
13.0MHz TCXO
Dielectric
X7R
X7R
COG
X7R
----------------------------------------
Tolerance
20%
10%
5%
10%
-----------------5%
-5%
-5%
-5%
1%
5%
-----------+/- .75%
2.5ppm
Working
Voltage/
Power
25V
50V
50V
10V
-----------------100V
.063W
100V
.063W
100V
.063W
-.125W
-.1W
----------16V
3V
Notes:
* Not used on the Si4113GX5-EVB.
1. Used on all evaluation boards.
2. Used on the Si4133-EVB.
3. Used on the Si4133M-EVB.
4. Used on the Si4133G-EVB.
5. Used on the Si4133GM-EVB.
6. Used on the Si4133GT2-EVB.
7. Used on the Si4133GM2-EVB.
8. Used on the Si4136-EVB.
9. Used on the Si4113GX5-EVB.
34
Rev. 0.6
Number
C0402X7R250-223MNE
C0402X7R500-561KNE
C0402COG500-101JNE
C1206X7R100-106KNE
RA2EJ2-6G
13x2 pin Header with Shroud
68000-402
68000-402
040/SO1BK2F
040/SO1BK2F
not installed
not installed
MKDSN 1,5/3
not installed
not installed
not installed
not installed
not installed
not installed
--0402CS-10NXJBX
CR0402-16W-000T
0402CS-2N0XJBX
CR0402-16W-000T
0402CS-40NXJBX
CR0402-16W-000T
CR0805-10W-124JT
CR0805-10W-1001FT
CR0805-10W-473JT
CR0805-10W-000T
not installed
Si4133-BT
Si4133-BM
Si4133G-BT
Si4133G-BM
Si4133G-XT2
Si4133G-XM2
Si4136-BT
Si4113G-X5
SN74LVTH241PW
TPS76030DBV
RTVY-174-13.0MHz
Vendor
Venkel
Venkel
Venkel
Venkel
Y-Connect
Mouser
Berg
Berg
Oxley
Oxley
--Phoenix Contact
--------Coilcraft
Venkel
Coilcraft
Venkel
Coilcraft
Venkel
Venkel
Venkel
Venkel
Venkel
-Silicon Labs
Silicon Labs
Silicon Labs
Silicon Labs
Silicon Labs
Silicon Labs
Silicon Labs
Silicon Labs
Texas Instruments
Texas Instruments
Raltron
Package
0402
0402
0402
Case A
SMA_E
13x2_0.100_in
2x1 100 mil
3x1 100mil
TP_1
TP_1
TP_1
TP_1
through_3
TP_1
TP_1
TP_1
TP_1
TP_1
TP_1
--0402
0402
0402
0402
0402
0402
0805
0805
0805
0805
0805
TSSOP-24
MLP-28
TSSOP-24
MLP-28
TSSOP-24
MLP-28
TSSOP-24
MLP-28
TSSOP-20
5L-SOT-23
TXCO
Note
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
2-7
2-8
2-5, 8
6-7
2-7, 9
9
2-8
2-8
1
1
1
1
1
2
3
4
5
6
7
8
9
1
1
1
Si4133/33G-EVB
Ordering Guide
Ordering Part Number
Description
Si4133 Family (TSSOP)
Si4133-EVB
Evaluation Board with Si4133-BT (TSSOP) and
Evaluation Kit (PC parallel port cable, evaluation
software on CD-ROM, and documentation)
Si4123-EVB
Si4133-EVB with Si4123-BT Sample Kit
Si4122-EVB
Si4133-EVB with Si4122-BT Sample Kit
Si4113-EVB
Si4133-EVB with Si4113-BT Sample Kit
Si4112-EVB
Si4133-EVB with Si4112-BT Sample Kit
Si4133 Family (MLP)
Si4133M-EVB
Evaluation Board with Si4133-BM (MLP) and
Evaluation Kit
Si4123M-EVB
Si4133M-EVB with Si4123-BM Sample Kit
Si4122M-EVB
Si4133M-EVB with Si4122-BM Sample Kit
Si4113M-EVB
Si4133M-EVB with Si4113-BM Sample Kit
Si4112M-EVB
Si4133M-EVB with Si4112-BM Sample Kit
Si4133G Family (TSSOP)
Si4133G-EVB
Evaluation Board with Si4133G-BT (TSSOP) and
Evaluation Kit
Si4123G-EVB
Si4133G-EVB with Si4123G-BT Sample Kit
Si4122G-EVB
Si4133G-EVB with Si4122G-BT Sample Kit
Si4113G-EVB
Si4133G-EVB with Si4113G-BT Sample Kit
Si4112G-EVB
Si4133G-EVB with Si4112G-BT Sample Kit
Si4133G Family (MLP)
Si4133GM-EVB
Evaluation Board with Si4133G-BM (MLP) and
Evaluation Kit
Si4123GM-EVB
Si4133GM-EVB with Si4123G-BM Sample Kit
Si4122GM-EVB
Si4133GM-EVB with Si4122G-BM Sample Kit
Si4113GM-EVB
Si4133GM-EVB with Si4113G-BM Sample Kit
Si4112GM-EVB
Si4133GM-EVB with Si4112G-BM Sample Kit
Si4133G-XT2 (TSSOP)
Si4133GT2-EVB
Evaluation Board with Si4133G-XT2 (TSSOP) and
Evaluation Kit
Si4133G-XM2 (MLP)
Si4133GM2-EVB
Evaluation Board with Si4133G-XM2 (MLP) and
Evaluation Kit
Si4133G-X5 (MLP)
Si4113GX5-EVB
Evaluation Board with Si4113GX5-BM (MLP) and
Evaluation Kit
Si4135 (MLP)
Si4135M-EVB
Evaluation Board with Si4135-BM (MLP) and
Evaluation Kit
Rev. 0.6
35
Si4133/33G-EVB
Document Change List
Revision 0.5 to Revision 0.6

36
Removed references to Si4133W.
Rev. 0.6
Si4133/33G-EVB
Notes:
Rev. 0.6
37
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