SFF80N20 Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFF80N20 ___ ___ ___ │ │ │ │ │ │ │ │ └ │ │ │ │ │ └ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Lead Option 3/ __ = Straight Leads DB = Down Bend UB = Up Bend Package 3/ 4/ N = TO-258 P = TO-259 M = TO-254 Z = TO-254Z 80 AMP , 200 Volts, 25 mΩ Avalanche Rated N-channel MOSFET Features: Rugged poly-Si gate Lowest ON-resistance in the industry Avalanche rated Hermetically Sealed, Isolated Package Low Total Gate Charge Fast Switching TX, TXV, S-Level screening available Improved (RDS(ON) QG) figure of merit Maximum Ratings5/ Symbol Value Units VDSS 200 V continuous transient VGS ±20 ±30 V @ TC = 25ºC ID1 55 A @ TC = 25ºC @ TC = 175ºC ID2 ID3 80 48 A Max. Avalanche current @ L= 0.1 mH IAR 60 A Single and Repetitive Avalanche Energy @ L= 0.1 mH EAS EAR 1500 50 mJ Total Power Dissipation @ TC = 25ºC PD 150 W TOP & TSTG -55 to +175 ºC RθJC 1.0 (typ.0.75) ºC/W Drain - Source Voltage Gate – Source Voltage Max. Continuous Drain Current (package limited) Max. Instantaneous Drain Current (Tj limited) Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) TO-254 (M) TO-254Z (Z) TO-258 (N) TO-259 (P) NOTES: *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For ordering information, price, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ For lead bending options / pinout configurations - contact factory. 4/ Maximum current limited by package configuration 5/ Unless otherwise specified, all electrical characteristics @25oC. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00129H DOC SFF80N20 Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristics5/ Symbol Min Typ Max Units BVDSS 200 220 –– V VGS = 10V, ID = 48A, Tj= 25 C VGS = 10V, ID = 48A, Tj=125oC VGS = 10V, ID = 48A, Tj= 175oC RDS(on) –– –– –– 25 50 65 30 65 –– mΩ VDS = VGS, ID = 4.0mA, Tj= 25oC VDS = VGS, ID = 4.0mA, Tj= 125oC VDS = VGS, ID = 4.0mA, Tj= -55oC VGS(th) 2.5 1.5 –– 4.5 3.6 5 5.0 –– 6 V VGS = ±20V, Tj= 25oC VGS = ±20V, Tj= 125oC IGSS –– –– 10 30 ±100 –– nA VDS = 200V, VGS = 0V, Tj = 25oC VDS = 200V, VGS = 0V, Tj = 125oC VDS = 200V, VGS = 0V, Tj = 150oC IDSS –– –– –– 0.01 2.5 25 25 150 –– μA μA μA VDS = 10V, ID = 48A, Tj = 25oC gfs 25 50 –– Mho VGS = 10V VDS = 100V ID = 48A Qg Qgs Qgd –– –– –– 150 45 75 250 65 120 nC VGS = 10V VDS = 100V ID = 48A RG = 4.0Ω, pw= 3us td(on) tr td(off) tf –– –– –– –– 50 50 110 50 75 75 135 75 nsec IF = 48A, VGS = 0V VSD –– 0.90 1.5 V Diode Reverse Recovery Time Reverse Recovery Charge IF = 10A, di/dt = 100A/usec IF = 10A, di/dt = 100A/usec IF = 10A, di/dt = 100A/usec IF = 25A, di/dt = 100A/usec IF = 25A, di/dt = 100A/usec IF = 25A, di/dt = 100A/usec trr1 Irm1 Qrr1 trr2 Irm2 Qrr2 –– –– –– –– –– –– 190 11 1 310 17 2.5 250 –– –– –– –– –– nsec A μC nsec A μC Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1 MHz Ciss Coss Crss –– –– –– 5300 1050 175 –– –– –– pF NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00129H Drain to Source Breakdown Voltage Drain to Source On State Resistance Gate Threshold Voltage Gate to Source Leakage Zero Gate Voltage Drain Current Forward Transconductance VGS = 0V, ID = 250μA o Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forward Voltage DOC SFF80N20 Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com TO-254 (M) TO-254Z (Z) TO-258 (N) TO-259 (P) PIN ASSIGNMENT (Standard) Package Drain Source Pin 1 Pin 2 TO-254 (M) Pin 1 Pin 2 TO-254Z (Z) Pin 1 Pin 2 TO-258 (N) Pin 1 Pin 2 TO-259 (P) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. Gate Pin 3 Pin 3 Pin 3 Pin 3 DATA SHEET #: F00129H DOC