UNISONIC TECHNOLOGIES CO., LTD UT4446 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4446 uses UTC’s advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)< 8.5mΩ @VGS=10V * RDS(ON)< 14.5mΩ @VGS=4.5V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SOP-8 Lead-free: UT4446L Halogen-free: UT4446G SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Normal UT4446-S08-R UT4446-S08-T Ordering Number Lead Free UT4446L-S08-R UT4446L-S08-T www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd Halogen Free UT4446G-S08-R UT4446G-S08-T Package Packing SOP-8 SOP-8 Tape Reel Tube 1 of 6 QW-R502-251.A UT4446 Power MOSFET PIN CONFIGURATION UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R502-251.A UT4446 Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 15 A Pulsed Drain Current IDM 40 A Avalanche Current IAR 20 A Repetitive avalanche energy L=0.1mH EAR 50 mJ Power Dissipation PD 3 W °C Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) THERMAL DATA PARAMETER SYMBOL θJA θJC Junction-to-Ambient Junction-to-Case MIN TYP 59 16 MAX 75 24 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS Gate Threshold Voltage On State Drain Current Static Drain-Source On-Resistance Forward Transconductance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Turn-ON Delay Time Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall-Time Total Gate Charge SYMBOL VGS=0V, ID=250µA VDS=24V, VGS=0V VDS=0V, VGS=±20V 30 VGS(TH) ID(ON) VDS=VGS, ID=250µA VDS=5V, VGS=10V VGS=10V, ID=15A VGS=4.5V, ID=11A VDS=5 V, ID=15 A 1 40 RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF VDS=15V, VGS=0V, f=100kHz VGS=10V, VDS=15V, RL=1.0Ω, RG=3Ω QG VDS=15V, VGS=4.5V, ID=15A Gate Source Charge QGS Gate Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=1A, VGS=0V Maximum Body-Diode Continuous IS Current Body Diode Reverse Recovery Time tRR IF=15A, dI/dt=100A/μs Body Diode Reverse Recovery QRR IF=15A, dI/dt=100A/μs Charge UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN BVDSS IDSS IGSS gFS 4.5V 10V TEST CONDITIONS TYP MAX UNIT 1 100 V µA nA 2.2 3 6.9 11.8 27 8.5 14.5 1520 306 214 1825 pF pF pF 7.2 8.2 22 6.7 17 33.7 6.2 10 56 80 392 216 20 40 ns ns ns ns 0.71 1 V 4 A 30 ns 24 19 V A mΩ S nC nC nC nC 3 of 5 QW-R502-251.A UT4446 Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Source to Drain Voltage Switching Time Waveforms 1200 1000 VDS 800 90% 600 400 VGS 10% tD(ON) 200 tD(OFF) tTHL tTLH 0 200 400 600 800 Source to Drain Voltage,VSD (mV) Drain Current,ID (µA) Drain Current,ID (µA) 0 Drain-Source On-State Resistance Characteristics 16 ID=15A VGS=10V 14 12 ID=11A VGS=4.5V 10 8 6 4 2 0 0 50 100 150 200 Drain to Source Voltage, VDS (mV) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-251.A UT4446 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-251.A