F20N60S
WF
WFF20N60S
Silicon N-Channel MOSFET
Features
�
20A,600V,RDS(on)(Max0.20Ω)@VGS=10V
�
Ultra-low Gate charge(Typical 84.4nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advancedplanar
stripe,VDMOS technology.this latest technology has beenespecially
designed to minimize on-state resistance, have a high rugged avalanche
characteristics .This devices is specially wellsuited for AC-DC switching
power supplies, DC-DC powerConverters high voltage H-bridge motor
drive PWM.
Absolute Maximum Ratings
Symbol
Value
Units
Drain Source Voltage
600
V
ID
Continuous Drain Current(@Tc=25℃)
20
A
IDM
Drain Current Pulsed（Duration is limited by Tjmax.)
50
A
VGS
Gate to Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
800
mJ
IAR
Single Pulse Avalanche Current
20
A
EAR
Repetitive Avalanche Energy (Frequency is limited by Tjmax.)
1
mJ
PD
Total Power Dissipation(@Tc=25℃)
34.5
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
VDSS
Parameter
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
3.6
℃/W
RQJA
Thermal Resistance , Junction -to -Ambient
-
-
60
℃/W
Rev.A Apr.2012
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
F20
N60S
WF
WFF20
F20N
Electrical Characteristics(Tc=25℃)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut -off current
Drain -source breakdown voltage
Symbol
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±30V,V DS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=600V,V GS=0V
-
-
1
µA
VDS=600V,TJ=150℃
-
-
100
µA
IDSS
V(BR)DSS
ID=250µA,VGS=0V
600
-
-
V
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250uA
2.5
-
3.5
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=13.1A
-
0.16
0.20
Ω
Forward Transconductance
gfs
VDS≥30V,ID=20A
-
18.8
-
S
Input capacitance
Ciss
VDS=70V,
-
2140
Reverse transfer capacitance
Crss
VGS=0V,
-
18
Output capacitance
Coss
f=1MHz
-
300
-
84.4
-
-
9.1
-
-
14.6
-
Min
Type
Max
Unit
-
-
20
A
Total gate charge(gate-source
pF
VDS=480V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=20.7A
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Continuous drain reverse current
Symbol
Test Condition
IS
TC=25℃
Pulse Diode Forward Current
Body Diode Voltage
ISM
VDSF
60
Tj=25 ISD=20A,VGS=0V
-
0.96
1.2
V
2/5
Steady, keep you advance
F20
N60S
WF
WFF20
F20N
Fig.1 Output Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance Variation vs
Drain Current
Fig.5 Gate Charge Characteristics
Fig.4 Capacitance
Fig.6 Source-Drain Diode Forward
Voltage
3/5
Steady, keep you advance
F20
N60S
WF
WFF20
F20N
Fig.7 On-Resistance vs.Junction
Temperature
Fig.8 Threshold Voltage vs.Junction
Temperature
4/5
Steady, keep you advance
F20
N60S
WF
WFF20
F20N
220
F Package Dimension
TOTO-220
220F
Unit:mm
5/5
Steady, keep you advance