WSP20D150 Silicon Controlled Rectifiers Features � 20A(2×10A),150V � VF(max)=0.75V(@TJ=125℃) � Low power loss,high efficiency � Common cathode structure � Guard ring for over voltage protection, High reliability � Maximum Junction Temperature Range(175℃) General Description Dual center tap Schottky rectifiers suited for High frequency switch power supply and Free wheeling diodes, polarity protection applications. Absolute Maximum Ratings Symbol Parameter Value Units VDRM Repetitive Peak reverse Voltage 150 V VDC Maximum DC blocking Voltage 150 V RMS forward Current 20 A IF(RMS) IF(AV) Per diode 10 Per device 20 Average forward current IFSM Surge non repetitive for ward current IRRM Repetitive peak reverse current dv/dt Critical rate of rise pf reverse voltage A 200 A 1 A 10000 V/ns TJ Junction Temperature 175 °C TSTG Storage Temperature -40~150 °C Thermal Characteristics Symbol RQJC Parameter Thermal Resistance Junction to Case Value Min Typ Max - - 2.2 Rev.A May.2011 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. Units ℃/W WSP20D150 Electrical Characteristics (per diode diode)) Characteristics Symbol Test Conditions Reverse leakage current IR VR=VRRM Forward voltage drop VF IF=10A Min Typ Max Units Tj=25℃ - - 10 μA Tj=125℃ - - 5 mA Tj=25℃ - 0.83 0.92 Tj=125℃ - 0.68 0.75 V *Notes:tp =380µs, δ<2% 2/4 Steady, keep you advance WSP20D150 Fig.1Forward Voltage Drop Versus Forward current(maximum Values ,per diode) Fig. 3 Average Current versus ambient temperature (d=0.5)(per diode) Fig .2 Junction Capacitance Versus reverse Voltage applied (typical Values,per diode) Fig. 4 Reverse leakage current versus reverse voltage applied ( typical values,per diode) 3/4 Steady, keep you advance WSP20D150 -220 Package Dimension TO TO-220 Unit: mm 4/4 Steady, keep you advance