WFY3N02 20V N−Channel MOSFET Features ■ 2.8A, 20V, RDS(on)(Max 65mΩ)@VGS=-4.5V ■ 1.2 V Rated for Low Voltage Gate Drive ■ SOT-23 Surface Mount for Small Footprint ■ Single Pulse Avalanche Energy Rated ■ Halogen-free General Description D This Power MOSFET is produced using Winsemi’s advanced MOS technology. This latest technology has been especially G designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for Load switching and PA switching. S T-23 SO SOT Marking: N02YM Y:year,M:months Absolute Maximum Ratings(Tc=25℃ unless otherwise noted) Symbol Parameter Value Units VDSS Drain Source Voltage 20 V ID Continuous Drain Current 2.8 A IDM Drain Current Pulsed 8 A PD Total Power Dissipation(Note 1) 0.9 W Tc=75℃ VGS Gate to Source Voltage ESD ESD Capability (Note 3) TJ, Tstg Junction and Storage Temperature TL Maximum lead Temperature for soldering purposes 0.6 C=100pF,RS = 1500Ω ±8 V 225 V -55~150 ℃ 260 ℃ Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Thermal Characteristics Symbol RQJA RQJA RQJA Parameter Thermal Resistance, Junction-to-Ambient(Note 1) Thermal Resistance, Junction-to-Ambient(Note 1) Thermal Resistance, Junction-to-Ambient(Note 2) Value Min Typ Max - - 170 110 300 Note 1: Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) Note 2: Surface−mounted on FR4 board using the minimum recommended pad size. Note 3: ESD Rating Information: HBM Class 0 Rev. A Mar.2010 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. Units ℃/W ℃/W ℃/W WFY3N02 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Type Max Unit Gate leakage current(Note 4) IGSS VGS = ±8 V, VDS = 0 V - - ±100 nA Drain cut−off current(Note 4) IDSS VDS = 16 V, VGS = 0 V - - -1 μA V(BR)DSS ID = 250 μA, VGS = 0 V 20 - - V Gate threshold voltage VGS(th) VDS = VDS ID =250 μA 0.65 - 1.2 V VGS = 4.5 V, ID = 2.8 A - 40 65 Drain−source ON resistance RDS(ON) 50 95 Drain−source breakdown voltage mΩ VGS = 2.5 V, ID = 2.0 A Forward Transconductance gfs VDS = 5.0 V, ID = 2.8 A - 6.5 - Input capacitance Ciss VDS = 6 V, - 428 - Reverse transfer capacitance Crss VGS = 0 V, - 57 - Output capacitance Coss f = 1 MHz - 80 - Turn-on Delay time td(on) VGS = 4.5 V, - 6.2 - Turn−on Rise time tr VDS =6.0 V, - 7.5 - Turn-off Delay time td(off) ID = - 16.0 - RG = 6 Ω, RL=10 Ω - 4.2 - VGS = 4.5V, - 7.5 8.5 S pF Switching time ns (Note 5) Turn−off Fall time Total gate charge tf Qg 1.0 A, Gate−source charge Qgs VDS =6 V, - 1.2 - Gate−drain (“miller”) Charge Qgd ID = 2.8 A - 2.2 - nC Source−Drain Ratings and Characteristics (Ta = 25°C) Symbol Test Condition Min Type Max Unit Continuous drain reverse current Characteristics IDR - - - 2.8 A Pulse drain reverse current IDRP - - - 8.0 A Forward voltage (diode) VDSF - 0.76 1.2 V IDR = 1.6A, VGS = 0 V Note 4: Pulse Test: Pulse Width ≤300μs, Duty Cycle 3 2%. Note 5: Switching characteristics are independent of operating junction temperature. This transistor is an electrostatic sensitive device Please handle with caution 2 /6 Steady, keep you advance WFY3N02 aracte Fig. 1 On-State Ch Cha cterristics g.3 On −Re sistance vs. Dr ain Curr ent Fi Fig On− Res Dra Curre cti on Fig.5 On-Resistance Variation vs Jun unc tio erature Temp mpe g.2 Transfer Current Ch ara cteri sti cs Fi Fig Cha rac ris tic g.4 Dio de For ward Volt age vs. Curr ent Fi Fig Diod Forw lta Curre arge Ch ara cteristi cs Fig.6 Gate Ch Cha Cha rac tic 3 /6 Steady, keep you advance WFY3N02 g.7 On−Resist ance vs. Gate-Source Voltage Fi Fig Resista g.8 Thres hold Volt age Fi Fig eshold lta g. 9 Si ngle Pulse Po wer Fi Fig. g.9 Sin Pow g.1 0 Drain Current and Temp erature Fi Fig.1 g.10 mpe 4 /6 Steady, keep you advance WFY3N02 11 Resisti ve Switching Test & Wavefor ms Fig. Fig.1 Resistiv form 5 /6 Steady, keep you advance WFY3N02 T-23 Package Dimension SO SOT DIM A A1 B C D E F G H I J MILLIMTERS MIN INCHES MAX MIN 0.95 1.90 2.60 1.40 2.80 1.00 0.00 0.35 0.10 0.30 50o MAX 0.037 0.074 3.00 1.70 3.10 1.30 0.10 0.50 0.20 0.60 10o 0.102 0.055 0.110 0.039 0.000 0.014 0.004 0.012 50o 0.118 0.067 0.122 0.051 0.004 0.020 0.008 0.024 10o 6 /6 Steady, keep you advance