PHOTOCOUPLER PS2581L1,PS2581L2 LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 4-PIN PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS2581L1, PS2581L2 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic DIP (Dual In-line Package). Creepage distance and clearance of leads are over 8 millimeters. The PS2581L2 is lead bending type (Gull-wing) for surface mounting. FEATURES • Long creepage and clearance distance (8 mm) • High isolation voltage (BV = 5 000 Vr.m.s.) • High collector to emitter voltage (VCEO = 80 V) • High-speed switching (tr = 3 µs TYP., tf = 5 µs TYP.) • High current transfer ratio (CTR = 200 % TYP.) • UL approved: File No. E72422 (S) • CSA approved: No. CA101391 • BSI approved: No. 8243/8244 • NEMKO approved: No. P97103006 • DEMKO approved: No. 307269 • SEMKO approved: No. 9741154/01 • FIMKO approved: No. 018277 • VDE0884 approved ORDERING INFORMATION (Solder Contains Lead) Part Number Package Safety Standard Approval Application Part Number PS2581L1 4-pin DIP UL, CSA, BSI, NEMKO, DEMKO, PS2581L1 PS2581L2 4-pin DIP (lead bending surface mount) SEMKO, FIMKO, VDE approved PS2581L2 PS2581L2-E3, E4 4-pin DIP taping *1 *1 As applying to Safety Standard, following part number should be used. ORDERING INFORMATION (Pb-Free) Part Number Package Safety Standard Approval Application Part Number PS2581L1-A 4-pin DIP UL, CSA, BSI, NEMKO, DEMKO, PS2581L1 PS2581L2-A 4-pin DIP (lead bending surface mount) SEMKO, FIMKO, VDE approved PS2581L2 PS2581L2-E3, E4-A 4-pin DIP taping *1 As applying to Safety Standard, following part number should be used. Document No. PN10239EJ01V0DS (1st edition) (Previous No. P12809EJ2V0DS00) Date Published February 2003 CP(K) The mark shows major revised points. *1 PS2581L1,PS2581L2 PACKAGE DIMENSIONS (in millimeters) PS2581L1 TOP VIEW 4.6±0.35 1.0±0.2 3 4 6.5+0.5 –0.1 1. Anode 2. Cathode 3. Emitter 4. Collector 1 2 10.16 3.5±0.3 0.35 3.2±0.4 4.15±0.4 7.62 2.54 0.50±0.1 0.25 M 1.25±0.15 0 to 15˚ PS2581L2 4.6±0.35 TOP VIEW 1.0±0.2 3 4 6.5+0.5 –0.1 1. Anode 2. Cathode 3. Emitter 4. Collector 1 2 10.16 3.5±0.3 0.25±0.2 7.62 1.25±0.15 0.25 M 0.9±0.25 2.54 12.0 MAX. PHOTOCOUPLER CONSTRUCTION Parameter Unit (MIN.) Air Distance 8 mm Outer Creepage Distance 8 mm Inner Creepage Distance 4 mm Isolation Distance 2 0.4 mm Data Sheet PN10239EJ01V0DS PS2581L1,PS2581L2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Parameter Symbol Ratings Unit Forward Current (DC) IF 80 mA Reverse Voltage VR 6 V ∆PD/°C 1.5 mW/°C PD 150 mW IFP 1 A Collector to Emitter Voltage VCEO 80 V Emitter to Collector Voltage VECO 7 V IC 50 mA ∆PC/°C 1.5 mW/°C PC 150 mW BV 5 000 Vr.m.s. Operating Ambient Temperature TA −55 to +100 °C Storage Temperature Tstg −55 to +150 °C Diode Power Dissipation Derating Power Dissipation Peak Forward Current Transistor *1 Collector Current Power Dissipation Derating Power Dissipation Isolation Voltage *2 *1 PW = 100 µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output Data Sheet PN10239EJ01V0DS 3 PS2581L1,PS2581L2 ELECTRICAL CHARACTERISTICS (TA = 25 °C) Diode Parameter Symbol Forward Voltage VF IF = 10 mA Reverse Current IR VR = 5 V Terminal Capacitance Ct V = 0 V, f = 1.0 MHz ICEO VCE = 80 V, IF = 0 mA CTR IF = 5 mA, VCE = 5 V VCE(sat) IF = 10 mA, IC = 2 mA Transistor Collector to Emitter Dark Current Coupled Current Transfer Ratio (IC/IF) *1 Collector Saturation Voltage Conditions Isolation Resistance RI-O VI-O = 1.0 kVDC Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz *2 tr tf Rise Time Fall Time *2 1.17 1.4 V 5 µA 50 80 10 200 pF 100 nA 400 % 0.3 V Ω 11 3 µs RL = 100 Ω 5 D : 100 to 300 (%) H : 80 to 160 (%) W : 130 to 260 (%) N : 80 to 400 (%) *2 Test circuit for switching time VCC PW = 100 µ s Duty Cycle = 1/10 4 Unit VCC = 10 V, IC = 2 mA, M : 80 to 240 (%) 50 Ω MAX. pF L : 200 to 400 (%) IF TYP. 0.5 *1 CTR rank Pulse Input MIN. VOUT RL = 100 Ω Data Sheet PN10239EJ01V0DS PS2581L1,PS2581L2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) Diode Power Dissipation PD (mW) 150 TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 100 50 0 25 50 75 100 125 50 25 50 75 100 125 150 Ambient Temperature TA (˚C) Ambient Temperature TA (˚C) FORWARD CURRENT vs. FORWARD VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 70 50 TA = +100 ˚C +60 ˚C +25 ˚C 60 Collector Current IC (mA) Forward Current IF (mA) 100 0 150 100 10 5 0 ˚C –25 ˚C –55 ˚C 1 0.5 50 40 50 30 mA 20 mA A m 10 20 IF = 5 mA 10 0.1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 2 4 6 8 10 Forward Voltage VF (V) Collector to Emitter Voltage VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 40 50 mA 20 mA 10 mA 10 000 VCE = 80 V 40 V 24 V 10 V 5V 1 000 Collector Current IC (mA) Collector to Emitter Dark Current ICEO (nA) 150 100 10 1 – 50 –25 0 25 50 75 100 10 5 mA 5 2 mA IF = 1 mA 1 0.5 0.1 0 Ambient Temperature TA (˚C) 0.2 0.4 0.6 0.8 1.0 Collector Saturation Voltage VCE(sat) (V) Data Sheet PN10239EJ01V0DS 5 PS2581L1,PS2581L2 ;;;;;;;;;;;;;;;;;;;;;;;; ;;;;;;;;;;;;;;;;;;;;;;;; 1.0;;;;;;;;;;;;;;;;;;;;;;;; ;;;;;;;;;;;;;;;;;;;;;;;; ;;;;;;;;;;;;;;;;;;;;;;;; 0.8;;;;;;;;;;;;;;;;;;;;;;;; ;;;;;;;;;;;;;;;;;;;;;;;; ;;;;;;;;;;;;;;;;;;;;;;;; 0.6 CURRENT TRANSFER RATIO vs. FORWARD CURRENT 450 1.2 0.4 Normalized to 1.0 at TA = 25 ˚C, IF = 5 mA, VCE = 5 V 0.2 0 –50 –25 0 25 50 75 Current Transfer Ratio CTR (%) Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 400 350 300 250 200 150 100 50 0 100 0.05 0.1 Ambient Temperature TA (˚C) 1 5 10 50 Forward Current IF (mA) SWITCHING TIME vs. LOAD RESISTANCE SWITCHING TIME vs. LOAD RESISTANCE 50 1 000 IC = 2 mA, VCC = 10 V, CTR = 290 % tf IF = 5 mA, VCC = 5 V, CTR = 290 % tf tr Switching Time t ( µ s) Switching Time t ( µ s) 0.5 10 td ts 1 ts 100 10 tr 0.1 10 50 100 500 1 k 50 k 100 k LONG TERM CTR DEGRADATION –5 –10 100 Ω –15 RL = 1 kΩ 300 Ω 2 5 10 20 50 100 200 500 1.2 CTR Degradation (Relative Value) Normalized Gain GV 5 k 10 k FREQUENCY RESPONSE –20 TYP. 1.0 0.8 IF = 5 mA TA = 25 ˚C 0.6 IF = 5 mA TA = 60 ˚C 0.4 0.2 0 Frequency f (kHz) 102 103 Time (Hr) Remark The graphs indicate nominal characteristics. 6 500 1 k Load Resistance RL (Ω) IF = 5 mA, VCE = 5 V 1 td Load Resistance RL (Ω) 0 0.5 1 100 5 k 10 k Data Sheet PN10239EJ01V0DS 104 105 PS2581L1,PS2581L2 TAPING SPECIFICATIONS (in millimeters) 2.05±0.1 4.4±0.2 12.35±0.15 11.5±0.1 1.55±0.1 24.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 0.38 6.6±0.2 12.0±0.1 Tape Direction PS2581L2-E3 PS2581L2-E4 Outline and Dimensions (Reel) R 1.0 B 21.0±0.8 B 100±1.0 2.0±0.5 B13.0±0.2 B 330±2.0 2.0±0.5 25.5±1.0 29.5±1.0 Packing: 1 000 pcs/reel Data Sheet PN10239EJ01V0DS 23.9 to 27.4 Outer edge of flange 7 PS2581L1,PS2581L2 NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering • Peak reflow temperature 260°C or below (package surface temperature) • Time of peak reflow temperature 10 seconds or less • Time of temperature higher than 220°C 60 seconds or less • Time to preheat temperature from 120 to 180°C 120±30 s • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) Package Surface Temperature T (˚C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 260˚C MAX. 220˚C to 60 s 180˚C 120˚C 120±30 s (preheating) Time (s) (2) Wave soldering • Temperature 260°C or below (molten solder temperature) • Time 10 seconds or less • Preheating conditions 120°C or below (package surface temperature) • Number of times One (Allowed to be dipped in solder including plastic mold portion.) • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Cautions • Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between collector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute maximum ratings. 8 Data Sheet PN10239EJ01V0DS PS2581L1,PS2581L2 USAGE CAUTIONS 1. Protect against static electricity when handling. 2. Avoid storage at a high temperature and high humidity. Data Sheet PN10239EJ01V0DS 9 PS2581L1,PS2581L2 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884) Parameter Symbol Speck Unit Application classification (DIN VDE 0109) for rated line voltages ≤ 300 Vr.m.s. IV for rated line voltages ≤ 600 Vr.m.s. III Climatic test class (DIN IEC 68 Teil 1/09.80) 55/100/21 Dielectric strength maximum operating isolation voltage. Test voltage (partial discharge test procedure a for type test and random test) UIORM 890 Vpeak Upr 1 068 Vpeak Upr 1 424 Vpeak UTR 8 000 Vpeak Upr = 1.2 × UIORM, Pd < 5 pC Test voltage (partial discharge test procedure b for all devices test) Upr = 1.6 × UIORM, Pd < 5 pC Highest permissible overvoltage Degree of pollution (DIN VDE 0109) 2 Clearance distance > 8.0 mm Creepage distance > 8.0 mm Comparative tracking index (DIN IEC 112/VDE 0303 part 1) CTI Material group (DIN VDE 0109) 175 III a Storage temperature range Tstg −55 to +150 °C Operating temperature range TA −55 to +100 °C Isolation resistance, minimum value VIO = 500 V dc at TA = 25 °C Ris MIN. 10 12 Ω VIO = 500 V dc at TA MAX. at least 100 °C Ris MIN. 10 11 Ω Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Tsi 175 °C Current (input current IF, Psi = 0) Isi 400 mA Power (output or total power dissipation) Psi 700 mW Ris MIN. 10 Isolation resistance VIO = 500 V dc at TA = 175 °C (Tsi) 10 Data Sheet PN10239EJ01V0DS 9 Ω 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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