CHENMKO CHT2222TPT

CHENMKO ENTERPRISE CO.,LTD
CHT2222TPT
SURFACE MOUNT
NPN Switching Transistor
VOLTAGE 40 Volts
CURRENT 0.6 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
SC-75/SOT-416
FEATURE
* Small surface mounting type. (SC-75/SOT-416)
* High current (Max.=600mA).
* Suitable for high packing density.
(2)
0.1
0.2±0.05
(3)
* Low voltage (Max.=40V) .
* High saturation current capability.
* Voltage controlled small signal switch.
(1)
1.0±0.1
0.1
0.3±0.05
0.5 1.6±0.2
0.5
0.1
0.2±0.05
0.8±0.1
CONSTRUCTION
* NPN Switching Transistor
MARKING
* NT
0.6~0.9
0.15±0.05
0~0.1
0.1Min.
1.6±0.2
C (3)
CIRCUIT
(1) B
E (2)
SC-75/SOT-416
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
75
VCEO
collector-emitter voltage
open base
−
40
V
VEBO
emitter-base voltage
open collector
−
6
V
IC
collector current (DC)
−
600
mA
ICM
peak collector current
−
800
mA
IBM
peak base current
−
200
mA
Ptot
total power dissipation
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
V
Note
1. Transistor mounted on an FR4 printed-circuit board.
2002-7
RATING CHARACTERISTIC CURVES ( CHT2222TPT )
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
VALUE
UNIT
357
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
ICBO
PARAMETER
collector cut-off current
CONDITIONS
MIN.
MAX.
UNIT
IE = 0; VCB = 60 V
−
10
nA
IC = 0; VCB = 60 V; Tj = 125 OC
−
10
uA
IEBO
emitter cut-off current
IC = 0; VEB = 5 V
−
10
nA
hFE
DC current gain
IC = 0.1 mA; VCE = 10V; note 1
35
−
IC = 1.0 mA; VCE = 10V
50
75
−
−
IC = 10 mA; VCE = 10V;Tamb = -55OC 35
−
IC = 150 mA; VCE = 10V
100
300
IC = 150 mA; VCE = 1.0V
50
−
IC = 500 mA; VCE = 10V
40
−
collector-emitter saturation
voltage
IC = 150 mA; IB = 15 mA
−
300
mV
IC = 500 mA; IB = 50 mA
−
1
V
base-emitter saturation voltage
IC = 150 mA; IB = 10 mA
0.6
1.2
V
IC = 500 mA; IB = 50 mA
−
2.0
V
IC = 10 mA; VCE = 10V
VCEsat
VBEsat
Cc
collector capacitance
IE = ie = 0; VCB = 5 V; f = 1 MHz
−
8
pF
Ce
emitter capacitance
IC = ic = 0; VBE = 500 mV;
f = 1 MHz
−
25
pF
fT
transition frequency
IC = 20 mA; VCE = 20 V;
f = 100 MHz
300
−
MHz
F
noise figure
IC = 100 µA; VCE = 5 V; RS = 1 kΩ;
f = 1.0 kHz
−
4
dB
Switching times (between 10% and 90% levels);
−
35
ns
−
15
ns
rise time
−
20
ns
toff
turn-off time
−
250
ns
ts
storage time
−
200
ns
tf
fall time
−
60
ns
ton
turn-on time
td
delay time
tr
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
ICon = 150 mA; IBon = 15 mA;
IBoff = −15 mA
V CE = 5V
400
125 °C
300
200
25 °C
100
- 40 °C
0
0.1
0.3
1
3
10
30
100
I C - COLLECTOR CURRENT (mA)
300
Base-Emitter Saturation
Voltage vs Collector Current
= 10
1
- 40 °C
0.8
25 °C
125 °C
0.6
0.4
1
I
C
10
100
- COLLECTOR CURRENT (mA)
500
V CESAT - COLLECTOR-EMITTER VOLTAGE (V)
500
V BE(ON) - BASE-EMITTER ON VOLTAGE (V)
Typical Pulsed Current Gain
vs Collector Current
V BESAT - BASE-EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
RATING CHARACTERISTIC CURVES ( CHT2222TPT )
0.4
= 10
0.3
125 °C
0.2
25 °C
0.1
- 40 °C
1
10
100
I C - COLLECTOR CURRENT (mA)
500
Base-Emitter ON Voltage vs
Collector Current
1
VCE = 5V
0.8
- 40 °C
25 °C
0.6
125 °C
0.4
0.2
0.1
1
10
I C - COLLECTOR CURRENT (mA)
25
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
Collector-Cutoff Current
vs Ambient Temperature
500
100
V
CB
20
= 40V
CAPACITANCE (pF)
I CBO - COLLECTOR CURRENT (nA)
Collector-Emitter Saturation
Voltage vs Collector Current
10
1
0.1
f = 1 MHz
16
12
C te
8
C ob
4
25
50
75
100
125
T A - AMBIENT TEMPERATURE (° C)
150
0.1
1
10
REVERSE BIAS VOLTAGE (V)
100
RATING CHARACTERISTIC CURVES ( CHT2222TPT )
Turn On and Turn Off Times
vs Collector Current
400
I B1 = I B2 =
Switching Times
vs Collector Current
400
Ic
V cc = 25 V
TIME (nS)
V cc = 25 V
160
240
ts
160
tr
t off
80
tf
80
t on
td
100
I C - COLLECTOR CURRENT (mA)
1000
0
10
100
I C - COLLECTOR CURRENT (mA)
Power Dissipation vs
Ambient Temperature
1
PD - POWER DISSIPATION (W)
TIME (nS)
10
320
240
0
10
Ic
I B1 = I B2 =
10
320
0.75
0.5
0.25
0
0
25
50
75
100
o
TEMPERATURE ( C)
125
150
1000
V CE = 10 V
T A = 25oC
6
hoe
4
h re
2
h fe
h ie
0
0
10
20
30
40
50
I C - COLLECTOR CURRENT (mA)
60
CHAR. RELATIVE TO VALUES AT TA = 25oC
Common Emitter Characteristics
8
CHAR. RELATIVE TO VALUES AT VCE = 10V
CHAR. RELATIVE TO VALUES AT I C= 10mA
RATING CHARACTERISTIC CURVES ( CHT2222TPT )
Common Emitter Characteristics
2.4
V CE = 10 V
I C = 10 mA
2
h re
h fe
1.6
hoe
1.2
0.8
0.4
0
0
20
40
60
80
T A - AMBIENT TEMPERATURE ( o C)
Common Emitter Characteristics
1.3
I C = 10 mA
T A = 25oC
1.25
h fe
1.2
1.15
h ie
1.1
1.05
1
h re
0.95
0.9
0.85
hoe
0.8
0.75
0
5
h ie
10
15
20
25
30
VCE - COLLECTOR VOLTAGE (V)
35
100
RATING CHARACTERISTIC CURVES ( CHT2222TPT )
Test Circuits
30 V
200
16 V
1.0 K
0
200ns
500
Saturated Turn-On Switching Time
6.0 V
- 1.5 V
NOTE: BVEBO = 5.0 V
1k
30 V
1.0 K
0
200ns
50
Saturated Turn-Off Switching Time
37