CHENYI SD101C

SD101A
THRU
SD101C
Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
Features
l
Low Reverse Recovery Time
l
Low Reverse Capacitance
l
Low Forward Voltage Drop
Small Signal
Schottky Diodes
l Guard Ring Construction for Transient Protection
Mechanical Data
l Case: DO-35, Glass
DO-35
l Terminals: Solderable per MIL-STD-202, Method 208
l Polarity: Indicated by Cathode Band
Maximum Ratings @ 25oC Unless Otherwise Specified
D
Characteristic
Symbol
Peak Repetitive Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
DC Blocking Voltage
VR
RMS Reverse Voltage
VR(RMS)
Maximum sigle cycle surge 10us
square wave
IFSM
2.0A
Power Dissipation(Note 1)
Thermal Resistance, Junction to
Ambient
Pd
400mW
R
300K/W
Junction Tmperature
Tj
125 C
Operation/Storage Temp. Range
SD101A
SD101B
SD101C
60V
50V
40V
A
Cathode
Mark
42V
35V
28V
B
TSTG
D
o
C
o
-55 to +150 C
Electrical Characteristics @ 25oC Unless Otherwise Specified
Charateristic
Symbol Max
Test Condition
Leakage Current
SD101A
200nA V R =50V
SD101B
IR
200nA V R =40V
SD101C
200nA V R =30V
Maximum Forward SD101A
Voltage Drop SD101B
SD101C
SD101A
SD101B
SD101C
VF
Junction Cap. SD101A
SD101B
SD101C
Cj
Reverse Recovery Time
trr
0.41V
0.4V
0.39V I F =1mA
I F =15mA
1V
0.95V
0.9V
2.0pF
2.1pF V R =0V, f=1.0MHz
2.2pF
I F =IR =50mA, recover to
1ns
200mA/0.1I R
DIMENSIONS
DIM
A
B
C
D
INCHES
MIN
------1.000
Note: 1. Valid provided that electrodes are kept at ambient temperature
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MAX
.166
.079
.020
---
MM
MIN
------25.40
MAX
4.2
2.00
.52
---
NOTE
SD101A thru SD101C
Figure 2. Typical forward conduction curve of combination
Schottky barrier and PN junction guard ring
Figure 1. Typical variation of forward. current vs.fwd.
Voltage for primary conduction through the
schottky barrier
mA
mA
A
B
A
B
C
C
IF
IF
VF
VF
Figure 4. Typical capacitance curve as a function
of reverse voltage
Figure 3.Typical variation of reverse current
at versus temperature
mA
mA
IR
B
A
C
IR
VR
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VR