DCCOM BC184

DC COMPONENTS CO., LTD.
BC184
DISCRETE SEMICONDUCTORS
R
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier applications.
TO-92
Pinning
.190(4.83)
.170(4.33)
1 = Collector
2 = Base
3 = Emitter
o
2 Typ
.190(4.83)
.170(4.33)
o
2 Typ
Absolute Maximum Ratings(TA=25oC)
Characteristic
.500
Min
(12.70)
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
45
V
Collector-Emitter Voltage
VCEO
30
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
100
mA
Total Power Dissipation
PD
350
mW
Junction Temperature
TJ
+150
o
Storage Temperature
TSTG
-55 to +150
o
.022(0.56)
.014(0.36)
.050
Typ
(1.27)
.022(0.56)
.014(0.36)
.100
Typ
(2.54)
3 2 1
.148(3.76)
.132(3.36)
.050
o
o
5 Typ. 5 Typ. (1.27) Typ
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Volatge
Characteristic
BVCBO
45
-
-
V
Test Conditions
Collector-Emitter Breakdown Voltage
BVCEO
30
-
-
V
IC=2mA, IB=0
Emitter-Base Breakdown Volatge
BVEBO
6
-
-
V
IE=100µA, IC=0
IC=10µA, IE=0
Collector Cutoff Current
ICBO
-
-
15
nA
VCB=30V, IE=0
Emitter Cutoff Current
IEBO
-
-
15
nA
VEB=4V, IC=0
VCE(sat)1
-
0.07
0.25
V
IC=10mA, IB=0.5mA
Collector-Emitter Saturation Voltage(1)
VCE(sat)2
-
0.2
0.6
V
IC=100mA, IB=5mA
Base-Emitter Saturation Voltage(1)
VBE(sat)
-
-
1.2
V
IC=100mA, IB=5mA
VBE(on)1
-
0.5
-
V
IC=0.1mA, VCE=5V
Base-Emitter On Voltage(1)
VBE(on)2
0.55
0.62
0.7
V
IC=2mA, VCE=5V
VBE(on)3
-
0.83
-
V
IC=100mA, VCE=5V
(1)
DC Current Gain
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
hFE
240
-
900
-
fT
150
-
-
MHz
-
-
5
pF
Cob
380µs, Duty Cycle
Classification of hFE
Rank
B
C
Range
240~500
450~900
2%
IC=2mA, VCE=5V
IC=10mA, VCE=5V, f=100MHz
VCB=10V, f=1MHz, IE=0