EPIGAP ELC-800-25

LED - Chip
ELC-800-25
Preliminary
10.04.2007
rev. 05/06
Radiation
Type
Technology
Electrodes
Infrared
DDH
AlGaAs/AlGaAs
N (cathode) up
typ. dimensions (µm)
325
280
240
typ. thickness
150 (±25) µm
cathode
gold alloy, 1.5 µm
anode
gold alloy, 0.5 µm
dotted, 25% covered
LED-04
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Test
Parameter
conditions
Symbol
Min
Typ
Max
Unit
1.6
1.9
V
Forward voltage
IF = 20 mA
VF
Reverse voltage
IR = 100 µA
VR
5
Radiant power1
IF = 20 mA
Φe
2.5
Radiant power2
IF = 20 mA
Φe
Peak wavelength
IF = 20 mA
λp
Spectral bandwidth at 50%
IF = 20 mA
∆λ0.5
30
nm
Switching time
IF = 20 mA
tr, tf
40
ns
1
2
V
790
3.2
mW
6.0
mW
800
815
nm
Measured on bare chip on TO-18 header with EPIGAP equipment
Measured on epoxy covered chip on TO-18 header with EPIGAP equipment
Labeling
Type
Lot N°
Φe(typ) [mW]
VF(typ) [V]
Quantity
ELС-800-25
Packing: Chips on adhesive film with wire-bond side on top
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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