EIC1314-7 13.75-14.50 GHz 7-Watt Internally Matched Power FET ISSUED 11/13/2008 FEATURES • • • • • • • 13.75– 14.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +38.5 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH G1dB ∆G IMD3 PAE SN IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V VP Pinch-off Voltage VDS = 3 V, IDS = 38 mA RTH .045 .094 .382 .004 Caution! ESD sensitive device. MIN TYP 38 38.5 dBm 5 6 dB MAX UNITS ±0.6 -41 f = 13.75-14.50GHz 3 Thermal Resistance 2) S.C.L. = Single Carrier Level. dB -45 dBc 25 % 2400 3000 mA 4 6.5 A -2.5 -4.0 2.6 Note: 1) Tested with 50 Ohm gate resistor. .070 ±.008 ALL DIMENSIONS IN INCHES Output Power at 1dB Compression f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 2400mA Gain at 1dB Compression f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 2400mA Gain Flatness f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈2400mA Output 3rd Order Intermodulation Distortion 2 ∆f = 10 MHz 2-Tone Test; Pout = 28.0 dBm S.C.L VDS = 10 V, IDSQ ≈ 65% IDSS f = 14.50 GHz Power Added Efficiency at 1dB Compression f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 2400mA Drain Current at 1dB Compression .022 YYWW PARAMETERS/TEST CONDITIONS1 Id1dB .319 DRAIN GATE ELECTRICAL CHARACTERISTICS (Ta = 25°C) P1dB .060 MIN. EIC1314-7 .129 SYMBOL Excelics .060 MIN. .650±.008 .512 3 V o C/W 3) Overall Rth depends on case mounting. 1,2 MAXIMUM RATING AT 25°C SYMBOLS Vds Vgs Pin Tch Tstg Pt ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 15 10V Gate-Source Voltage -5 -4V PARAMETERS Input Power 35dBm @ 3dB Compression Channel Temperature 175 oC 175 oC Storage Temperature -65 to +175 oC -65 to +175 oC Total Power Dissipation 50W 50W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 4 issued November 2008 EIC1314-7 13.75-14.50 GHz 7-Watt Internally Matched Power FET ISSUED 11/13/2008 Gain @1dB compression v.s Frequency Output Power v.s Frequency 10 40 9 8 38 36 G 1 d B /d B P 1d B /d B m 7 34 6 5 4 3 2 32 1 30 13.6 13.7 13.8 13.9 14 14.1 14.2 14.3 14.4 Frequency/GHz P1dB v.s Frequency 14.5 14.6 0 13.6 13.8 14 14.2 14.4 14.6 Frequency/GHz G1dB v.s Frequency Typical S-Parameters (T= 25°C, 50Ω system, de-embedded to edge of package) VDS = 10 V, IDSQ = 2400mA Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 4 issued November 2008 EIC1314-7 13.75-14.50 GHz 7-Watt Internally Matched Power FET ISSUED 11/13/2008 THIRD-ORDER INTERCEPT POINT IP3 60 50 IP3 = Pout + IM3/2 40 f1 or f2 Pout [S.C.L.] (dBm) Total Power Dissipation / W Power Dissipation v.s Temperature 30 20 10 Pout IM3 Pin IM3 0 (2f1-f2) f1 f2 (2f2-f1) f1 f2 (2f2 - f1) or (2f1 - f2) 0 50 100 150 200 Case Temperature / °C Pin [S.C.L.] (dBm) IM3 v.s Output Power f 1=14.5 GHz, f 2=14.49 GHz -20 -30 IM3 / dBc -40 -50 -60 -70 -80 13 16 19 22 25 28 31 Pout (S.C.L) / dBm Typical IMD3 Data (T= 25°C) VDS = 10 V, IDSQ ≈ 65% IDss Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 3 of 4 issued November 2008 EIC1314-7 ISSUED 11/13/2008 13.75-14.50 GHz 7-Watt Internally Matched Power FET DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 4 of 4 issued November 2008