Pb Free Plating Product ISSUED DATE :2006/03/01 REVISED DATE : G138 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 50V 3.5 500mA Description The G138 has been designed to minimize on-state resistance, while provide rugged, reliable and fast switching performance. The G138 is universally used for all commercial-industrial surface mount applications. Features *Simple Drive Requirement *Small Package Outline Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@10V 3 Continuous Drain Current , VGS@10V 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Unit V V mA mA mA mW W/ Tj, Tstg Ratings 50 ±20 500 400 800 225 0.002 -55 ~ +150 Symbol Rthj-a Value 556 Unit /W Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max. 1/4 ISSUED DATE :2006/03/01 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 50 - - V VGS=0, ID=250uA Gate Threshold Voltage VGS(th) 0.5 - 2.0 V VDS=VGS, ID=1mA gfs - 500 - mS VDS=10V, ID=220mA Gate-Source Leakage Current IGSS - - 100 nA VGS= Drain-Source Leakage Current(Tj=25 ) IDSS - - 1 uA VDS=50V, VGS=0 - - 3.5 VGS=10V, ID=220mA - - 6.0 VGS=4.5V, ID=220mA Forward Transconductance Static Drain-Source On-Resistance RDS(ON) Input Capacitance Ciss - - 50 Output Capacitance Coss - - 25 Reverse Transfer Capacitance Crss - - 5 Symbol Min. Typ. Max. Unit VSD - - 1.5 V pF Test Conditions 20V VGS=0V VDS=25V f=1.0MHz Source-Drain Diode Parameter Forward On Voltage2 Test Conditions IS=100mA, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270 /W when mounted on Min. copper pad. 2/4 ISSUED DATE :2006/03/01 REVISED DATE : Characteristics Curve 3/4 ISSUED DATE :2006/03/01 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 4/4