ISSUED DATE :2005/10/21 REVISED DATE : GBC338 NPN SILICON TRANSISTOR Description The GBC338 is designed for drive and output-stages of audio amplifiers. Features High DC Current Gain: 100~630 @VCE=1V, IC=100mA Complementary to GBC328 Package Dimensions D TO-92 E A S1 b1 REF. L S E A T IN G PLANE e1 e b A S1 b b1 C C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 REF. D E L e1 e Absolute Maximum Ratings (TA=25 ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (continuous) Total Device Dissipation @ TA =25 Derate above 25 Symbol VCBO VCEO VEBO IC PD Total Device Dissipation @ TC =25 Derate above 25 PD TJ, Tstg R JA R JC Operating and Storage Junction Temperature Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Electrical Characteristics (TA = 25 Symbol BVCBO BVCEO BVCES BVEBO ICBO ICES IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Cob Min. 30 25 30 5 100 60 - Typ. 210 15 Ratings 30 25 5 800 625 5.0 Unit V V V mA mW mW/ 1.5 12 -55 ~ +150 200 83.3 W mW/ /W /W unless otherwise noted) Max. 100 100 100 0.7 1.2 630 - Unit V V V V nA nA nA V V MHz pF Test Conditions IC=100uA, IE=0 IC=10mA, IB=0 IC=100uA, IE=0 IE=10uA, IC=0 VCB=20V, IE=0 VCE=25V, VBE=0 VEB=4V, IC=0 IC=500mA, IB=50mA VCE=1V, IC=300mA VCE=1V, IC=100mA VCE=1V, IC=300mA VCE=5V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz *Pulse Test: Pulse Width Classification Of hFE1 Rank Range GBC338 A 100 ~ 250 B 160 ~ 400 380 s, Duty Cycle 2% C 250 ~ 630 Page: 1/3 ISSUED DATE :2005/10/21 REVISED DATE : Characteristics Curve GBC338 Fig 1. DC Current Gain Fig 2. Saturation Region Fig 3. “On” Voltages Fig 4. Temperature Coefficients Fig 5. Capacitances Fig 6. Safe Operating Area Page: 2/3 ISSUED DATE :2005/10/21 REVISED DATE : Fig 7. Thermal Response Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GBC338 Page: 3/3