HMC756 v01.0709 LINEAR & POWER AMPLIFIERS - CHIP 3 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 16 - 24 GHz Typical Applications Features The HMC756 is ideal for: Saturated Output Power: +33 dBm @ 28% PAE • Point-to-Point Radios High Output IP3: +41 dBm • Point-to-Multi-Point Radios High Gain: 23 dB • VSAT DC Supply: +7V @ 790 mA • Military & Space DC Blocked RF I/Os No External Matching Required Die Size: 2.4 x 1.6 x 0.1 mm Functional Diagram General Description The HMC756 is a three stage GaAs PHEMT MMIC 1 Watt Power Amplifier which operates between 16 and 24 GHz. The HMC756 provides 23 dB of gain, and +33 dBm of saturated output power at 28% PAE from a +7V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of length 0.31 mm (12 mils). Electrical Specifi cations, TA = +25° C, Vdd = Vdd1, = Vdd2 = +7V, Idd = 790 mA [1] Parameter Min. Frequency Range Gain 19 Gain Variation Over Temperature Input Return Loss Output Return Loss Max. Min. 22 Saturated Output Power (Psat) (IP3)[2] Total Supply Current (Idd) 29 Typ. Max. 20 - 24 20 GHz 23 dB 0.03 dB/ °C 16 15 dB 16 dB 32 dBm 33 dBm 41 40 dBm 790 790 mA 31 33 30 [1] Adjust Vgg between -2 to 0V to achieve Idd= 790 mA typical. [2] Measurement taken at +7V @ 790 mA, Pin / Tone = +17 dBm 3 - 126 Units 0.026 18 Output Power for 1 dB Compression (P1dB) Output Third Order Intercept Typ. 16 - 20 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC756 v01.0709 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 16 - 24 GHz Broadband Gain & Return Loss vs. Frequency Gain vs. Temperature 30 30 28 +25C +85C -55C 26 S21 S11 S22 0 -10 3 24 22 20 18 -20 16 14 -30 12 14 16 18 20 22 FREQUENCY (GHz) 24 26 28 14 18 22 24 26 Output Return Loss vs. Temperature 0 0 +25C +85C -55C +25C +85C -55C -5 RETURN LOSS (dB) -4 -8 -12 -16 -10 -15 -20 -20 -25 14 16 18 20 22 24 26 14 16 18 FREQUENCY (GHz) 20 22 24 26 FREQUENCY (GHz) P1dB vs. Temperature Psat vs. Temperature 36 37 +25C +85C -55C 35 Psat (dBm) 34 P1dB (dBm) 20 FREQUENCY (GHz) Input Return Loss vs. Temperature RETURN LOSS (dB) 16 LINEAR & POWER AMPLIFIERS - CHIP 10 GAIN (dB) RESPONSE (dB) 20 32 30 28 33 31 +25C +85C -55C 29 26 27 16 18 20 FREQUENCY (GHz) 22 24 16 18 20 22 24 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 127 HMC756 v01.0709 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 16 - 24 GHz Psat vs. Current 37 34 35 Psat (dBm) 36 32 30 720mA 790mA 840mA 28 33 31 720mA 790mA 840mA 29 26 27 16 18 20 22 24 16 18 FREQUENCY (GHz) 22 24 Output IP3 vs. Supply Current, Pout/Tone = +17 dBm 47 42 42 IP3 (dBm) 47 37 +25C +85C -55C 32 20 FREQUENCY (GHz) Output IP3 vs. Temperature, Pout/Tone = +17 dBm IP3 (dBm) LINEAR & POWER AMPLIFIERS - CHIP 3 P1dB (dBm) P1dB vs. Current 37 720mA 790mA 840mA 32 27 27 16 18 20 22 24 16 18 FREQUENCY (GHz) 20 22 24 FREQUENCY (GHz) Output IP3 vs. Supply Voltage, Pout/Tone = +17 dBm Output IM3 47 80 70 60 IM3 (dBc) IP3 (dBm) 42 37 50 40 16GHz 18GHz 20GHz 22GHz 24GHz 30 6.5V 7.0V 7.5V 32 20 10 0 27 16 18 20 FREQUENCY (GHz) 3 - 128 22 24 10 12 14 16 18 20 22 Pout/TONE (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 24 26 HMC756 v01.0709 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 16 - 24 GHz Power Compression @ 20 GHz Reverse Isolation vs. Temperature 0 Pout Gain PAE 25 20 15 10 5 0 -15 -10 +25C +85C -55C -20 -40 -50 -60 -10 -5 0 5 10 15 14 16 18 INPUT POWER (dBm) 22 24 26 Gain & Power vs. Supply Voltage @ 20 GHz 40 Gain (dB), P1dB (dBm), Psat (dBm) 40 35 30 GAIN(dB) P1dB(dBm) Psat(dBm) 25 20 740 760 780 800 820 35 30 GAIN (dB) P1dB (dBm) Psat (dBm) 25 20 15 5.5 840 6 6.5 Idd(Vdc) 7 Vdd(Vdc) Power Dissipation 6 POWER DISSIPATION (W) Gain (dB), P1dB (dBm), Psat (dBm) 20 FREQUENCY (GHz) Gain & Power vs. Supply Current @ 20 GHz 15 720 3 -30 7.5 LINEAR & POWER AMPLIFIERS - CHIP 30 REVERSE ISOLATION (dB) Pout (dBm), GAIN (dB), PAE (%) 35 5.5 5 16GHz 18GHz 20GHz 22GHz 24GHz 4.5 4 -15 -12 -9 -6 -3 0 3 6 9 12 15 INPUT POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 129 HMC756 v01.0709 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 16 - 24 GHz Typical Supply Current vs. Vdd Absolute Maximum Ratings Drain Bias Voltage (Vd) LINEAR & POWER AMPLIFIERS - CHIP 3 +7V Idd (mA) RF Input Power (RFIN) +26 dBm +6.5 757 Channel Temperature 150 °C +7.0 790 +7.5 832 Continuous Pdiss (T= 85 °C) (derate 86 mW/°C above 85 °C) 5.6 W Thermal Resistance (channel to die bottom) 11.7 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Note: Amplifi er will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 790 mA at +7V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard Alternate GP-2 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3 - 130 Vdd (V) NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. OVERALL DIE SIZE ± .002 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC756 v01.0709 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 16 - 24 GHz Pad Descriptions Function Description 1 RFIN This pad is AC coupled and matched to 50 ohm. 2 Vgg Gate control for PA. Adjust Vg to achieve recommended bias current. External bypass caps 100pF, 0.1uF and 4.7uF are required. 3, 5 Vdd1, Vdd2 Power Supply voltage for amplifier. External bypass capacitors of 100pF and 0.1uF are required. 4 RFOUT This pad is AC coupled and matched to 50 ohm. Die Bottom GND Die bottom must be connected to RF/DC ground Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 LINEAR & POWER AMPLIFIERS - CHIP Pad Number 3 - 131 HMC756 v01.0709 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 16 - 24 GHz Assembly Diagram LINEAR & POWER AMPLIFIERS - CHIP 3 3 - 132 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC756 v01.0709 GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 16 - 24 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. 3 LINEAR & POWER AMPLIFIERS - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 133