HITTITE HMC591_09

HMC591
v02.0109
LINEAR & POWER AMPLIFIERS - CHIP
3
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6 - 10 GHz
Typical Applications
Features
The HMC591 is ideal for use as a power amplifier for:
Saturated Output Power: +34 dBm @ 24% PAE
• Point-to-Point Radios
Output IP3: +43 dBm
• Point-to-Multi-Point Radios
Gain: 23 dB
• Test Equipment & Sensors
DC Supply: +7.0 V @ 1340 mA
• Military End-Use
50 Ohm Matched Input/Output
• Space
2.47 mm x 2.49 mm x 0.1 mm
Functional Diagram
General Description
The HMC591 is a high dynamic range GaAs PHEMT
MMIC 2 Watt Power Amplifier which operates from
6 to 10 GHz. This amplifier die provides 23 dB of
gain and +34 dBm of saturated power, at 24% PAE
from a +7.0V supply. Output IP3 is +43 dBm typical.
The RF I/Os are DC blocked and matched to 50
Ohms for ease of integration into Multi-Chip-Modules
(MCMs). All data is taken with the chip in a 50 ohm test
fixture connected via 0.025mm (1 mil) diameter wire
bonds of length 0.31mm (12 mils). For applications
which require optimum OIP3, Idd should be set for 940
mA, to yield +43 dBm OIP3. For applications which
require optimum output P1dB, Idd should be set for
1340 mA, to yield +33 dBm Output P1dB.
Electrical Specifi cations, TA = +25° C, Vdd = +7V, Idd = 1340 mA[1]
Parameter
Min.
Frequency Range
Typ.
Max.
Min.
6 - 10
Gain
20
Max.
23
dB
dB/ °C
Input Return Loss
12
14
dB
Output Return Loss
11
10
dB
33.5
dBm
34
dBm
43
43
dBm
1340
1340
mA
30
Saturated Output Power (Psat)
Output Third Order Intercept
(IP3)[2]
Supply Current (Idd)
33
33.5
30.5
[1] Adjust Vgg between -2 to 0V to achieve Idd= 1340 mA typical.
[2] Measurement taken at 7V @ 940mA, Pin / Tone = -15 dBm
3 - 78
GHz
0.05
Output Power for 1 dB
Compression (P1dB)
20
Units
0.05
Gain Variation Over Temperature
23
Typ.
6.8 - 9
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC591
v02.0109
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6 - 10 GHz
Gain vs. Temperature
30
34
25
32
20
30
28
10
S21
S11
S22
5
0
-5
24
22
20
-10
18
-15
16
-20
14
-25
3
26
+25C
+85C
-40C
12
4
5
6
7
8
9
10
11
12
6
6.5
7
FREQUENCY (GHz)
Input Return Loss vs. Temperature
8.5
9
9.5
10
0
+25C
+85C
-40C
-5
RETURN LOSS (dB)
-5
RETURN LOSS (dB)
8
Output Return Loss vs. Temperature
0
-10
-15
-20
-10
-15
+25C
+85C
-40C
-20
-25
-25
4
5
6
7
8
9
10
11
12
4
5
6
FREQUENCY (GHz)
8
9
10
11
12
9
9.5
10
Psat vs. Temperature
36
34
34
PSAT (dBm)
36
32
+25C
+85C
-55C
30
7
FREQUENCY (GHz)
P1dB vs. Temperature
P1dB (dBm)
7.5
FREQUENCY (GHz)
28
LINEAR & POWER AMPLIFIERS - CHIP
15
GAIN (dB)
RESPONSE (dB)
Broadband Gain & Return Loss
32
+25C
+85C
-55C
30
28
26
26
6
6.5
7
7.5
8
8.5
FREQUENCY (GHz)
9
9.5
10
6
6.5
7
7.5
8
8.5
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 79
HMC591
v02.0109
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6 - 10 GHz
Psat vs. Current
36
34
34
32
940 mA
1140 mA
1340 mA
30
32
940 mA
1140 mA
1340 mA
30
28
26
26
6
6.5
7
7.5
8
8.5
9
9.5
10
6
6.5
7
FREQUENCY (GHz)
8
8.5
9
9.5
10
Power Compression @ 8 GHz,
7V @ 1340 mA
35
Pout(dBm), GAIN (dB), PAE(%)
48
44
IP3 (dBm)
7.5
FREQUENCY (GHz)
Output IP3 vs. Temperature
7V @ 940 mA, Pin/Tone = -15 dBm
40
+25C
+85C
-55C
36
32
28
6
6.5
7
7.5
8
8.5
9
9.5
25
20
15
10
5
0
-14
10
Pout
Gain
PAE
30
-9
-4
FREQUENCY (GHz)
70
70
IM3 (dBc)
90
50
6 GHz
7 GHz
8 GHz
9 GHz
10 GHz
-16
-12
-8
6
11
16
Output IM3, 7V @ 1340 mA
90
10
-20
1
INPUT POWER (dBm)
Output IM3, 7V @ 940 mA
30
6 GHz
7 GHz
8 GHz
9 GHz
10 GHz
50
30
-4
Pin/Tone (dBm)
3 - 80
PSAT (dBm)
36
28
IM3 (dBc)
LINEAR & POWER AMPLIFIERS - CHIP
3
P1dB (dBm)
P1dB vs. Current
0
4
8
10
-20
-16
-12
-8
-4
0
Pin/Tone (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
4
8
HMC591
v02.0109
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6 - 10 GHz
Gain & Power vs. Supply Voltage @ 8 GHz
Gain & Power vs. Supply Current @ 8 GHz
38
34
GAIN
P1dB
Psat
30
26
22
18
6.5
7
34
26
22
18
940
7.5
3
GAIN
P1dB
Psat
30
1140
Vdd SUPPLY VOLTAGE (V)
1340
Idd SUPPLY CURRENT (mA)
Reverse Isolation
vs. Temperature, 7V @ 1340 mA
Power Dissipation
10
0
ISOLATION (dB)
-20
POWER DISSIPATION (W)
-10
+25C
+85C
-40C
-30
-40
-50
-60
9
8
6GHz
7GHz
8GHz
9GHz
10GHz
7
6
-70
-80
6
6.5
7
7.5
8
8.5
9
9.5
10
5
-14
-10
Absolute Maximum Ratings
-6
-2
2
6
10
14
INPUT POWER (dBm)
FREQUENCY (GHz)
Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd)
+8 Vdc
Vdd (V)
Idd (mA)
Gate Bias Voltage (Vgg)
-2 to 0 Vdc
+6.5
1355
RF Input Power (RFIN)(Vdd = +7.0 Vdc)
+15 dBm
+7.0
1340
Channel Temperature
175 °C
+7.5
1325
Continuous Pdiss (T= 85 °C)
(derate 117.6 mW/°C above 85 °C)
10.59 W
Thermal Resistance
(channel to die bottom)
8.5 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
LINEAR & POWER AMPLIFIERS - CHIP
GAIN (dB), P1dB (dBm), Psat(dBm)
GAIN (dB), P1dB (dBm), Psat(dBm)
38
Note: Amplifi er will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 1340 mA at +7.0V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 81
HMC591
v02.0109
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6 - 10 GHz
Outline Drawing
LINEAR & POWER AMPLIFIERS - CHIP
3
Die Packaging Information [1]
Standard
Alternate
GP-1 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
3 - 82
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE ± .002
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC591
v02.0109
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6 - 10 GHz
Pad Descriptions
Function
Description
1
RFIN
This pad is AC coupled and
matched to 50 Ohms.
3 - 5, 7, 8
Vdd 1-5
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.1 μF are required.
6
RFOUT
This pad is AC coupled and
matched to 50 Ohms.
9
Vgg
Gate control for amplifier. Adjust to achieve Idd of 1340 mA.
Please follow “MMIC Amplifier Biasing Procedure”
Application Note. External bypass capacitors of 100 pF and
0.1 μF are required.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3
LINEAR & POWER AMPLIFIERS - CHIP
Pad Number
3 - 83
HMC591
v02.0109
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6 - 10 GHz
Assembly Diagram
LINEAR & POWER AMPLIFIERS - CHIP
3
3 - 84
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC591
v02.0109
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6 - 10 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be located as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V
ESD strikes.
Transients: Suppress instrument and bias supply transients while bias
is applied. Use shielded signal and bias cables to minimize inductive
pick-up.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should
be clean and flat.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
3
LINEAR & POWER AMPLIFIERS - CHIP
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 85