VISHAY SI4463CDY

SPICE Device Model Si4463CDY
Vishay Siliconix
P-Channel 2.5 V (G-S) MOSFET
DESCRIPTION
CHARACTERISTICS
The attached SPICE model describes the typical electrical
characteristics of the p-channel vertical DMOS. The
subcircuit model is extracted and optimized over the - 55 °C
to + 125 °C temperature ranges under the pulsed 0 V to 10 V
gate drive. The saturated output impedance is best fit at the
gate bias near the threshold voltage. A novel gate-to-drain
feedback capacitance network is used to model the gate
charge characteristics while avoiding convergence
difficulties of the switched Cgd model. All model parameter
values are optimized to provide a best fit to the measured
electrical data and are not intended as an exact physical
interpretation of the device.
• P-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the - 55 °C to + 125 °C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse
Recovery Characteristics
SUBCIRCUIT MODEL SCHEMATIC
D
CGD
R1
3
M2
Gy
G
RG
+ –
ETCV
Gx
CGS
DBD
M1
S
Note
This document is intended as a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers should refer to
the appropriate datasheet of the same number for guaranteed specification limits.
Document Number: 67600
S11-0402-Rev. A, 14-Mar-11
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SPICE Device Model Si4463CDY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SIMULATED MEASURED
DATA
DATA
SYMBOL
TEST CONDITIONS
VGS(th)
VDS = VGS, ID = - 250 μA
0.82
-
VGS = - 10 V, ID = - 13 A
0.0060
0.0060
VGS = - 4.5 V, ID = - 12 A
0.0075
0.0073
UNIT
Static
Gate-Source Threshold Voltage
Drain-Source On-State Resistancea
RDS(on)
V

Forward Transconductancea
gfs
VDS = - 10 V, ID = - 13 A
52
60
S
Diode Forward Voltage
VSD
IS = - 3 A
- 0.70
- 0.70
V
4210
4250
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = - 10 V, VGS = 0 V, f = 1 MHz
854
840
828
830
VDS = - 10 V, VGS = - 10 V, ID = - 10 A
98
108
54
54
VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A
7.8
7.8
18.5
18.5
pF
nC
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
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Document Number: 67600
S11-0402-Rev. A, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SPICE Device Model Si4463CDY
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA (TJ = 25 °C, unless otherwise noted)
10
60
VGS = 10 V, 6 V, 5 V, 4 V, 3 V
TJ = 125 °C
8
ID - Drain Current (A)
ID - Drain Current (A)
48
36
24
VGS = 2 V
6
TJ = - 55 °C
4
12
2
0
0
TJ = 25 °C
0.0
0.5
1.0
1.5
2.0
0.0
2.5
0.6
0.020
7000
0.016
5600
0.012
VGS = 4.5 V
0.008
0.004
1.2
1.8
2.4
VGS = 10 V
Ciss
4200
2800
1400
Coss
Crss
0.000
0
0
10
20
30
40
50
0
4
ID - Drain Current (A)
8
12
16
20
VDS - Drain-to-Source Voltage (V)
100
10
VDS = 10 V
ID = 10 A
TJ = 150 °C
10
8
IS - Source Current (A)
VGS - Gate-to-Source Voltage (V)
3.0
VGS - Gate-to-Source Voltage (V)
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
VDS - Drain-to-Source Voltage (V)
VDS = 15 V
6
4
TJ = 25 °C
1
0.1
0.01
2
0.001
0
0
23
46
69
Qg - Total Gate Charge (nC)
92
115
0
0.2
0.4
0.6
0.8
1
1.2
VSD - Source-to-Drain Voltage (V)
Note
Dots and squares represent measured data.
Document Number: 67600
S11-0402-Rev. A, 14-Mar-11
www.vishay.com
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 91000
Revision: 18-Jul-08
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