ETC BC182L

BC182L
General Purpose Transistors
General Description:
• General Purpose NPN Silicon Planar Epitaxial Amplifiers Transistors.
TO-92 Plastic Package
Dimensions
Minimum
Maximum
A
4.32
5.33
B
4.45
5.20
C
3.18
4.19
D
0.41
0.55
E
0.35
0.50
F
5°
G
1.14
H
1.20
K
12.70
-
L
1.982
2.082
M
1.03
1.20
1.40
Dimensions : Millimetres
Pin Configuration
1. Base
2. Collector
3. Emitter
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BC182L
General Purpose Transistors
Absolute Maximum Ratings (Ta = 25°C unless specified otherwise)
Parameter
Symbol
Value
Collector-Emitter Voltage
VCEO
50
Collector-Base Voltage
VCBO
60
Emitter-Base Voltage
VEBO
6.0
IC
100
mA
350
2.8
mW
mW/°C
1.0
8
W
mW/°C
Collector Current Continuous
Power Dissipation at Ta = 25°C
Derate Above 25°C
PD
Total Device Dissipation at TC = 25°C
Derate Above 25°C
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55 to +150
Junction to Ambient
Rth(j-a)
375
Junction to Case
Rth(j-c)
125
Units
V
°C
Thermal Resistance
ºC/W
Electrical Characteristics (Ta = 25°C unless specified otherwise)
Parameter
Symbol
Test Condition
Minimum
Collector-Emitter Voltage
VCEO
IC = 2mA, IB = 0
50
-
-
Collector-Base Voltage
VCBO
IC = 10µA, IE = 0
60
-
-
Emitter-Base Voltage
VEBO
IE = 100µA, IC = 0
6
-
-
Collector Cutoff Current
ICBO
VCB = 50V, IE = 0
-
-
15
Emitter-Base Leakage Current
IEBO
VEB = 4.0V, IC = 0
-
-
15
DC Current Gain
hFE
IC = 2mA
125
-
-
BC182L
Typical Maximum
V
nA
-
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 10mA, IB = 0.5mA
*IC = 100mA, IB = 5mA
-
-
0.25
0.6
Base-Emitter Saturation Voltage
VBE(sat)
*IC = 100mA, IB = 5mA
-
-
1.2
VBE(on)
IC = 100µA, VCE = 5V
IC = 2mA, VCE = 5V
*IC = 100mA, VCE = 5V
0.55
fT
IC = 0.5mA, VCE = 3V, f = 100MHz
IC = 10mA, VCE = 5V, f = 100MHz
150
Cob
VCB = 10V, IC = 0, f = 1MHz
-
Base-Emitter On Voltage
Units
V
0.5
0.7
0.83
Dynamic Characteristics
Current-Gain Bandwidth Product
Common Base Output Capacitance
100
-
-
MHz
5.0
pF
*Pulse Condition : Width ≤300µs, Duty Cycle ≤2%.
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31/05/05 V1.0
BC182L
General Purpose Transistors
Electrical Characteristics Continued (Ta = 25°C unless specified otherwise)
Parameter
Symbol
Test Condition
Minimum
Typical Maximum
Units
Common Base Input Capacitance
Cib
VBE = 0.5V, IC = 0, f = 1MHz
-
8.0
-
pF
Small-Signal Current Gain
hfe
IC = 2mA, VCE = 5V, f = 1KHz
125
-
500
-
Noise Figure
NF
VCE = 5.0V, IC = 0.2mA, Rs = 2.0KΩ,
f = 1KHz, F = 200Hz
-
-
10
dB
Dynamic Characteristics
Specifications
VCEO
(V)
VCBO
maximum
(V)
IC
(A)
hFE
minimum
at IC = 2mA
fT
minimum
(MHz)
Ptot
(mW)
Package
Part Number
50
60
0.1
120
150
350
TO-92
BC182L
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31/05/05 V1.0
BC182L
General Purpose Transistors
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31/05/05 V1.0