Excelics EFA080A-70 DATA SHEET Low Distortion GaAs Power FET 44 19 4 20 S S 70 D 40 NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +23.5dBm TYPICAL OUTPUT POWER 7.0 dB TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY 180 Min. (All Leads) • • • • • • G All Dimensions In mils. ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS MIN TYP Output Power at 1dB Compression f=12GHz Vds=5V, Ids=50% Idss f=18GHz Gain at 1dB Compression f=12GHz Vds=5V, Ids=50% Idss f=18GHz Power Added Efficiency at 1dB Compression Vds=5V, Ids=50% Idss f=12GHz 21.5 23.5 23.5 7.0 4.5 Idss Saturated Drain Current Vds=3V, Vgs=0V 130 210 Gm Transconductance Vds=3V, Vgs=0V 90 120 Vp Pinch-off Voltage Vds=3V, Ids=2.0mA BVgd Drain Breakdown Voltage Igd=1.0mA -10 -15 V BVgs Source Breakdown Voltage Igs=1.0mA -6 -14 V Rth Thermal Resistance P1dB G1dB PAE PARAMETERS/TEST CONDITIONS 6.0 MAX dBm dB % 30 -2.0 300 -3.5 135* MAXIMUM RATINGS AT 25OC PARAMETERS ABSOLUTE1 mA mS * Overall Rth depends on case mounting. SYMBOLS UNIT CONTINUOUS2 Drain-Source Voltage 8V 5V Vds Gate-Source Voltage -5V -4V Vgs Drain Current Idss 185mA Ids Forward Gate Current 20mA 4mA Igsf Input Power 22dBm @ 3dB Compression Pin Channel Temperature 175oC 150 oC Tch Storage Temperature -65/175oC -65/150 oC Tstg Total Power Dissipation 1.1W 0.9W Pt Note: 1 Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com V o C/W EFA080A-70 DATA SHEET Low Distortion GaAs Power FET S-PARAMETERS FREQ (GHz) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 --- S11 --MAG ANG 0.909 -42.3 0.826 -77.0 0.766 -104.2 0.724 -128.4 0.691 -148.9 0.672 -163.0 0.653 -178.5 0.639 167.4 0.645 144.9 0.658 126.6 0.655 116.0 0.667 101.8 0.719 84.9 0.752 70.5 0.754 57.6 0.763 43.0 0.760 32.5 0.779 25.1 0.788 10.8 0.818 -1.5 0.833 -8.6 0.808 -17.7 0.803 -34.1 0.820 -48.4 0.788 -59.1 0.782 -73.7 8V, 1/2 Idss --- S21 ----- S12 --MAG ANG MAG ANG 6.038 146.2 0.032 59.9 5.067 118.9 0.049 45.3 4.189 96.7 0.059 33.8 3.590 77.3 0.064 26.9 3.129 59.7 0.068 21.6 2.766 44.3 0.072 18.6 2.487 29.4 0.075 15.9 2.266 14.8 0.079 14.7 2.073 -1.1 0.087 11.4 1.885 -16.7 0.096 5.8 1.793 -31.1 0.109 -0.3 1.690 -46.7 0.124 -7.8 1.512 -62.2 0.133 -17.2 1.334 -76.1 0.138 -25.8 1.230 -91.4 0.148 -37.2 1.113 -108.5 0.152 -49.6 0.951 -120.4 0.153 -55.6 0.886 -129.9 0.169 -66.8 0.815 -144.0 0.166 -77.8 0.742 -158.2 0.169 -89.6 0.680 -169.6 0.171 -99.0 0.639 179.7 0.181 -108.3 0.601 164.5 0.188 -122.5 0.550 147.3 0.191 -139.2 0.524 135.1 0.202 -151.7 0.538 121.1 0.236 -164.9 --- S22 --MAG ANG 0.452 -26.1 0.405 -47.4 0.383 -64.2 0.366 -77.3 0.338 -90.8 0.317 -108.5 0.322 -122.3 0.306 -136.5 0.308 -148.4 0.317 -166.1 0.337 171.2 0.366 150.2 0.387 131.4 0.419 116.3 0.480 98.5 0.527 78.5 0.535 66.4 0.584 58.5 0.627 45.7 0.679 32.6 0.684 22.4 0.671 15.3 0.659 -0.8 0.662 -20.3 0.666 -31.0 0.639 -45.2